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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MNS1N6640US/TR

MNS1N6640US/TR

DIODE GP 50V 300MA D-5D

Microchip Technology

3,391 -
MNS1N6640US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N5807US

JANTXV1N5807US

DIODE GEN PURP 50V 3A D-5B

Microchip Technology

3,017 -
JANTXV1N5807US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount D-5B -65°C ~ 175°C
1N6546

1N6546

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

2,911 -
1N6546

数据表

* - Bulk Active - - - - - - - - - - - - -
1N6857UR-1

1N6857UR-1

SCHOTTKY RECTIFIER

Microchip Technology

9,568 -
1N6857UR-1

数据表

- DO-213AA Bulk Active Schottky 16 V 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz 150mA - - Surface Mount DO-213AA -65°C ~ 150°C
UTX215

UTX215

DIODE GEN PURP 150V 2A A AXIAL

Microchip Technology

8,929 -
UTX215

数据表

- A, Axial Bulk Active Standard 150 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 3 µA @ 150 V - 2A - - Through Hole A, Axial -195°C ~ 175°C
UTR3340

UTR3340

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

5,941 -
UTR3340

数据表

- B, Axial Bulk Active Standard 400 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 400 V 240pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UTR3350

UTR3350

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

8,917 -
UTR3350

数据表

- B, Axial Bulk Active Standard 500 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 5 µA @ 500 V 200pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UTR3305

UTR3305

DIODE GEN PURP 50V 3A B AXIAL

Microchip Technology

8,764 -
UTR3305

数据表

- B, Axial Bulk Active Standard 50 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 50 V 600pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UTR3360

UTR3360

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

7,071 -
UTR3360

数据表

- B, Axial Bulk Active Standard 600 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 5 µA @ 600 V 160pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UTR4305

UTR4305

DIODE GEN PURP 50V 4A B AXIAL

Microchip Technology

7,063 -
UTR4305

数据表

- B, Axial Bulk Active Standard 50 V 1.1 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 50 V 600pF @ 0V, 1MHz 4A - - Through Hole B, Axial -65°C ~ 175°C
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