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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4255SM

1N4255SM

DIODE GP 2KV 250MA S SQ-MELF

Microchip Technology

4,221 -
1N4255SM

数据表

- SQ-MELF, S Bulk Active Standard 2000 V 3.5 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 2000 V - 250mA - - Surface Mount S, SQ-MELF -65°C ~ 175°C
JANTX1N5419US

JANTX1N5419US

DIODE GEN PURP 500V 3A D-5B

Microchip Technology

8,719 -
JANTX1N5419US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
UT4040

UT4040

DIODE GEN PURP 400V 4A B

Microchip Technology

4,933 -
UT4040

数据表

- Axial Bulk Active Standard 400 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - 4A - - Through Hole B -195°C ~ 175°C
1N4948US

1N4948US

DIODE GEN PURP 1KV 1A D-5C

Microchip Technology

4,507 -
1N4948US

数据表

- SQ-MELF, C Bulk Active Standard 1000 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 1 µA @ 1000 V 15pF @ 12V, 1MHz 1A - - Surface Mount D-5C -55°C ~ 175°C
JANTXV1N5416US

JANTXV1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

6,588 -
JANTXV1N5416US

数据表

- SQ-MELF, E Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N4942US

1N4942US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

7,462 -
1N4942US

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz 1A - - Surface Mount A, SQ-MELF -65°C ~ 175°C
JANTX1N3595US

JANTX1N3595US

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

7,547 -
JANTX1N3595US

数据表

- SQ-MELF, B Bulk Active Standard - 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 200mA Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6857UR-1/TR

1N6857UR-1/TR

DIODE SCHOTTKY 16V 150MA DO213AA

Microchip Technology

7,083 -
1N6857UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 16 V 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz 150mA - - Surface Mount DO-213AA -65°C ~ 150°C
UTR3310/TR

UTR3310/TR

DIODE GP REV 100V 3A B AXIAL

Microchip Technology

3,350 -
UTR3310/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 100 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 100 V 400pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UTR3305/TR

UTR3305/TR

DIODE GP REV 50V 3A B AXIAL

Microchip Technology

9,498 -
UTR3305/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 50 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 50 V 600pF @ 0V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
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