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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UT4010

UT4010

DIODE GEN PURP 100V 4A B

Microchip Technology

5,869 -
UT4010

数据表

- Axial Bulk Active Standard 100 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V - 4A - - Through Hole B -195°C ~ 175°C
JAN1N5622US/TR

JAN1N5622US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

2,245 -
JAN1N5622US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N5416

JANTXV1N5416

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,257 -
JANTXV1N5416

数据表

- B, Axial Bulk Discontinued at Digi-Key Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5614US/TR

JANTXV1N5614US/TR

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

4,552 -
JANTXV1N5614US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 200 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5804USE3/TR

1N5804USE3/TR

DIODE GEN PURP 100V 1A A SQ-MELF

Microchip Technology

2,458 -
1N5804USE3/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A - - Surface Mount A, SQ-MELF -65°C ~ 175°C
JAN1N5711UR-1

JAN1N5711UR-1

DIODE SCHOTTKY 70V 33MA DO213AA

Microchip Technology

3,902 -
JAN1N5711UR-1

数据表

- DO-213AA Bulk Active Schottky 70 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
JANTX1N5621US

JANTX1N5621US

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

8,446 -
JANTX1N5621US

数据表

- SQ-MELF, A Bulk Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5623

JANTX1N5623

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

9,322 -
JANTX1N5623

数据表

- A, Axial Bulk Active Standard 1000 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N5415

JANTXV1N5415

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

8,157 -
JANTXV1N5415

数据表

- B, Axial Bulk Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5807US/TR

JANTX1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

7,601 -
JANTX1N5807US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
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