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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5819UR-1/TR

JAN1N5819UR-1/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

5,153 -
JAN1N5819UR-1/TR

数据表

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
JANTX1N6640/TR

JANTX1N6640/TR

DIODE GEN PURP 50V 300MA

Microchip Technology

2,461 -
JANTX1N6640/TR

数据表

- D, Axial Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JANTXV1N4942

JANTXV1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2,846 -
JANTXV1N4942

数据表

- A, Axial Bulk Active Standard 200 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz 1A Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
1N5418E3

1N5418E3

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

4,849 -
1N5418E3

数据表

- B, Axial Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5186US/TR

1N5186US/TR

UFR,FRR

Microchip Technology

3,987 -
1N5186US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - 3A - - Surface Mount E-MELF -65°C ~ 175°C
1N5189US/TR

1N5189US/TR

UFR,FRR

Microchip Technology

8,816 -
1N5189US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - 3A - - Surface Mount E-MELF -65°C ~ 175°C
1N5187US/TR

1N5187US/TR

UFR,FRR

Microchip Technology

6,120 -
1N5187US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - 3A - - Surface Mount E-MELF -65°C ~ 175°C
JANTX1N5807US

JANTX1N5807US

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

2,154 -
JANTX1N5807US

数据表

- SQ-MELF, B Bulk Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N6639US

JAN1N6639US

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

8,687 -
JAN1N6639US

数据表

- SQ-MELF, E Bulk Active Standard 75 V 1.2 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5B -65°C ~ 175°C
JAN1N5554US/TR

JAN1N5554US/TR

DIODE GEN PURP 1KV 5A D-5B

Microchip Technology

2,688 -
JAN1N5554US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1 V - 5A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
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