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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5554US

JAN1N5554US

DIODE GEN PURP 1KV 5A D-5B

Microchip Technology

2,169 -
JAN1N5554US

数据表

- SQ-MELF, E Bulk Active Standard 1000 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - 5A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JAN1N5553US

JAN1N5553US

DIODE GEN PURP 800V 3A D-5B

Microchip Technology

3,151 -
JAN1N5553US

数据表

- SQ-MELF, E Bulk Active Standard 800 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - 3A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
1N5419E3

1N5419E3

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

7,250 -
1N5419E3

数据表

- B, Axial Bulk Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5418/TR

JANTXV1N5418/TR

DIODE GEN PURP 400V 3A

Microchip Technology

5,101 -
JANTXV1N5418/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N5554US/TR

1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

5,235 -
1N5554US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
JANTX1N5623US/TR

JANTX1N5623US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,874 -
JANTX1N5623US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V 15pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N5622US

JAN1N5622US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,689 -
JAN1N5622US

数据表

- SQ-MELF, A Bulk Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5804USE3

1N5804USE3

DIODE GEN PURP 100V 1A A SQ-MELF

Microchip Technology

9,459 -
1N5804USE3

数据表

- SQ-MELF, A Bulk Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A - - Surface Mount A, SQ-MELF -65°C ~ 175°C
1N5804US/TR

1N5804US/TR

DIODE GEN PURP 100V 1A D-5A

Microchip Technology

3,229 -
1N5804US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
JAN1N6641US/TR

JAN1N6641US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,768 -
JAN1N6641US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
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