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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N5619US/TR

JANTXV1N5619US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

3,224 -
JANTXV1N5619US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5802/TR

JANTX1N5802/TR

DIODE GEN PURP 50V 1A

Microchip Technology

8,303 -
JANTX1N5802/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JAN1N5804US/TR

JAN1N5804US/TR

DIODE GEN PURP 100V 2.5A D-5A

Microchip Technology

2,321 -
JAN1N5804US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N5419US

1N5419US

DIODE GEN PURP 500V 3A D-5B

Microchip Technology

8,069 -
1N5419US

数据表

- SQ-MELF, E Bulk Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
JAN1N6641US

JAN1N6641US

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

2,707 -
JAN1N6641US

数据表

- SQ-MELF, E Bulk Active Standard 50 V 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5B -65°C ~ 175°C
1N5802US/TR

1N5802US/TR

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

5,386 -
1N5802US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
JAN1N3595US/TR

JAN1N3595US/TR

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,021 -
JAN1N3595US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 125 V 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - 4A Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5418

JANTXV1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

8,318 -
JANTXV1N5418

数据表

- B, Axial Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5616US

JANTXV1N5616US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,107 -
JANTXV1N5616US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N4944

JANTXV1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

9,898 -
JANTXV1N4944

数据表

- A, Axial Bulk Active Standard 400 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V 35pF @ 12V, 1MHz 1A Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
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