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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5417US/TRDIODE GEN PURP 200V 3A D-5B Microchip Technology |
7,271 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
1N5418USE3UFR,FRR Microchip Technology |
3,427 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | B, SQ-MELF | - |
|
MSC030SDA120KDIODE SIL CARB 1.2KV 30A TO220 Microchip Technology |
9,321 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 141pF @ 400V, 1MHz | 70A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
1N5805US/TRDIODE GEN PURP 135V 1A D-5A Microchip Technology |
2,323 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 135 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N5803US/TRDIODE GEN PURP 80V 1A D-5A Microchip Technology |
5,654 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 80 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTX1N5420/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
3,303 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N3595AUS/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
5,554 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | 8pF @ 0V, 1MHz | 150mA | Military | MIL-PRF-19500/241 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
JANTXV1N5186/TRDIODE GEN PURP 100V 3A AXIAL Microchip Technology |
7,860 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5806/TRDIODE GEN PURP 150V 1A Microchip Technology |
4,639 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTXV1N5804/TRDIODE GEN PURP 100V 1A Microchip Technology |
5,614 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
