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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5189/TR

JAN1N5189/TR

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

5,911 -
JAN1N5189/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5188/TR

JAN1N5188/TR

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,652 -
JAN1N5188/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N3595AUS

JAN1N3595AUS

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,525 -
JAN1N3595AUS

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N3595US

JAN1N3595US

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,671 -
JAN1N3595US

数据表

- SQ-MELF, B Bulk Active Standard 125 V 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - 4A Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5186

JANTXV1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

9,779 -
JANTXV1N5186

数据表

- B, Axial Bulk Active Standard 100 V 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5619US

JANTXV1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

5,665 -
JANTXV1N5619US

数据表

- SQ-MELF, A Bulk Active Standard 600 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6641US

1N6641US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

5,544 -
1N6641US

数据表

- SQ-MELF, D Bulk Active Standard 50 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - 300mA - - Surface Mount D-5D -65°C ~ 175°C
JANTX1N5802

JANTX1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

8,722 -
JANTX1N5802

数据表

- A, Axial Bulk Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417US

1N5417US

DIODE GEN PURP 200V 3A D5B

Microchip Technology

8,980 -
1N5417US

数据表

- SQ-MELF, E Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
CD5822

CD5822

DIODE SCHOTTKY 40V 3A DIE

Microchip Technology

8,733 -
CD5822

数据表

- Die Tape & Reel (TR) Active Schottky 40 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - 3A - - Surface Mount Die -65°C ~ 125°C
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