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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5188DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
6,105 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5189DIODE GEN PURP 500V 3A B AXIAL Microchip Technology |
4,148 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 500 V | 2 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5619/TRDIODE GEN PURP 600V 1A Microchip Technology |
8,422 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N6677UR-1/TRDIODE SCHOTTKY 40V 200MA DO213AA Microchip Technology |
3,667 | - |
|
数据表 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 40 V | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 40 V | 50pF @ 0V, 1MHz | 200mA | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
|
JAN1N5417US/TRDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
7,070 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5618USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
8,511 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
|
JANTXV1N6642UDIODE GEN PURP 100V 300MA D-5D Microchip Technology |
9,383 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Active | Standard | 100 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
1N5803USDIODE GEN PURP 80V 1A D-5A Microchip Technology |
3,380 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 80 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N5805USDIODE GEN PURP 135V 1A D-5A Microchip Technology |
2,755 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 135 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N5550DIODE GEN PURP 200V 5A AXIAL Microchip Technology |
9,635 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
