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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5417/TRDIODE GEN PURP 200V 3A Microchip Technology |
9,598 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UES1002DIODE GEN PURP 100V 1A AXIAL Microchip Technology |
99 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 100 V | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | 1A | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
CDLL5819E3/TRDIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
3,322 | - |
|
数据表 |
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
|
|
JANTX1N5419/TRDIODE GEN PURP 500V 3A Microchip Technology |
4,929 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UT252DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
4,679 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1 V @ 750 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JAN1N5417USDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
6,610 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N4248/TRDIODE GEN PURP 800V 1A Microchip Technology |
9,011 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5614USDIODE GEN PURP 200V 1A D-5A Microchip Technology |
3,826 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | Military | MIL-PRF-19500/437 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JANTXV1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
6,776 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N5188US/TRDIODE GEN PURP 400V 3A Microchip Technology |
6,932 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
