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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UTR41DIODE GEN PURP 400V 1A A AXIAL Microchip Technology |
6,640 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 3 µA @ 400 V | 60pF @ 0V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
UTR21DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
8,793 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 200 V | 80pF @ 0V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
UTR40DIODE GP 400V 500MA A AXIAL Microchip Technology |
6,047 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 3 µA @ 400 V | 60pF @ 0V, 1MHz | 500mA | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
UT267DIODE GEN PURP 600V 2A A AXIAL Microchip Technology |
9,855 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1 V @ 900 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 600 V | - | 2A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
UTR50DIODE GP 500V 500MA A AXIAL Microchip Technology |
5,137 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 500 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 500 V | 50pF @ 0V, 1MHz | 500mA | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
UTR62DIODE GEN PURP 600V 2A A AXIAL Microchip Technology |
2,118 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 600 V | 40pF @ 0V, 1MHz | 2A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTX1N5419DIODE GEN PURP 500V 3A AXIAL Microchip Technology |
9,180 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5553USDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
40 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 800 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
MSC030SDA120SDIODE SIL CARB 1.2KV 30A D3PAK Microchip Technology |
84 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 30A | - | - | Surface Mount | D3PAK | - |
|
JAN1N5420/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
6,191 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
