| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CD3A20DIODE SCHOTTKY 20V 3A DIE Microchip Technology |
7,929 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 20 V | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | 3A | - | - | Surface Mount | Die | -65°C ~ 125°C |
|
CD3A40DIODE SCHOTTKY 40V 3A DIE Microchip Technology |
7,997 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 40 V | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | 3A | - | - | Surface Mount | Die | -65°C ~ 125°C |
|
JANTXV1N4248DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
3,811 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N3070UR/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
9,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
92 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5554/TRSTD RECTIFIER Microchip Technology |
3,483 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
CDLL5819E3DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
4,905 | - |
|
数据表 |
- | DO-213AB, MELF (Glass) | Bulk | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
|
JANTX1N5619US/TRDIODE GEN PURP 600V 1A D-5A Microchip Technology |
4,077 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTX1N5620US/TRDIODE GEN PURP 800V 1A D-5A Microchip Technology |
3,668 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
1N5186USDIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,112 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |