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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N5619US

JANTX1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

5,244 -
JANTX1N5619US

数据表

- SQ-MELF, A Bulk Active Standard 600 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N5420

JAN1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

6,411 -
JAN1N5420

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
MNS1N5811US

MNS1N5811US

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

7,569 -
MNS1N5811US

数据表

- SQ-MELF, B Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5417

JANTXV1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

8,615 -
JANTXV1N5417

数据表

- B, Axial Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5618US/TR

JANTX1N5618US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

2,366 -
JANTX1N5618US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5819UR-1E3/TR

1N5819UR-1E3/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

7,985 -
1N5819UR-1E3/TR

数据表

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz 1A - - Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
1N6639US/TR

1N6639US/TR

DIODE GP 75V 300MA D-5D

Microchip Technology

6,831 -
1N6639US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 75 V 1.2 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V - 300mA - - Surface Mount D-5D -65°C ~ 175°C
JAN1N6640US

JAN1N6640US

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

8,197 -
JAN1N6640US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 50 V 1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5620US

JANTX1N5620US

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

2,495 -
JANTX1N5620US

数据表

- SQ-MELF, A Bulk Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 175°C
CD3A30

CD3A30

DIODE SCHOTTKY 30V 3A DIE

Microchip Technology

9,883 -
CD3A30

数据表

- Die Tape & Reel (TR) Active Schottky 30 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - 3A - - Surface Mount Die -65°C ~ 125°C
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