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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6857-1/TRDIODE SCHOTTKY 20V 150MA DO35 Microchip Technology |
2,310 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 20 V | 750 mV @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 4.5pF @ 0V, 1MHz | 150mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
CDLL5818E3/TRDIODE SCHOTTKY 30V 1A DO213AB Microchip Technology |
9,680 | - |
|
数据表 |
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 30 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB (MELF, LL41) | - |
|
1N4944DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
3,277 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | 35pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5819UR-1/TRDIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
9,486 | - |
|
数据表 |
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
|
1N4945UFR,FRR Microchip Technology |
3,599 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
JANTX1N5415USDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
3,857 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JAN1N6642UDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
2,601 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JANTXV1N5614/TRDIODE GEN PURP 200V 1A Microchip Technology |
7,435 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
JAN1N5415US/TRDIODE GEN PURP 50V 3A Microchip Technology |
8,557 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTXV1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
5,665 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
