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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5807USDIODE GEN PURP 50V 6A B SQ-MELF Microchip Technology |
6,768 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANTX1N5186DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,791 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5551USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
9,654 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTX1N5809US/TRDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
7,897 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
8,524 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JAN1N5623USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
8,929 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTX1N5615US/TRDIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology |
9,072 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 200 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | 1A | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
|
|
JANTX1N5811US/TRDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
8,574 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
1N6622US/TRDIODE GEN PURP 660V 1.2A A-MELF Microchip Technology |
4,833 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 1.2A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
|
1N6622U/TRDIODE GP 660V 1.2A A SQ-MELF Microchip Technology |
6,491 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 660 V | - | 1.2A | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
