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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6857-1

1N6857-1

SCHOTTKY RECTIFIER

Microchip Technology

8,732 -
1N6857-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
CDLL5818E3

CDLL5818E3

DIODE SCHOTTKY 30V 1A DO213AB

Microchip Technology

9,913 -
CDLL5818E3

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 30 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 0.9pF @ 5V, 1MHz 1A - - Surface Mount DO-213AB (MELF, LL41) -
1N5620US/TR

1N5620US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

5,371 -
1N5620US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A - - Surface Mount D-5A -65°C ~ 200°C
MNS1N5806US

MNS1N5806US

DIODE GEN PURP 160V 1A A SQ-MELF

Microchip Technology

3,115 -
MNS1N5806US

数据表

- SQ-MELF, A Bulk Active Standard 160 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A, SQ-MELF -65°C ~ 175°C
1N5807US/TR

1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

8,942 -
1N5807US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809US/TR

1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,988 -
1N5809US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5415US

JAN1N5415US

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,713 -
JAN1N5415US

数据表

- B, Axial Bulk Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
CDLL5195

CDLL5195

DIODE GP 180V 200MA DO213AA

Microchip Technology

7,506 -
CDLL5195

数据表

- DO-213AA Bulk Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 µA @ 180 V - 200mA - - Surface Mount DO-213AA -65°C ~ 175°C
APT60D100SG/TR

APT60D100SG/TR

DIODE GEN PURP 1KV 60A D3PAK

Microchip Technology

4,993 -
APT60D100SG/TR

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 1000 V 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - 60A - - Surface Mount D3PAK -55°C ~ 175°C
MNS1N5811US/TR

MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

6,349 -
MNS1N5811US/TR

数据表

- SQ-MELF, B Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
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