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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N3614

1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

5,343 -
1N3614

数据表

- A, Axial Bulk Discontinued at Digi-Key Standard 800 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 800 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5616US/TR

JAN1N5616US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

8,196 -
JAN1N5616US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5550US

1N5550US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

6,950 -
1N5550US

数据表

- SQ-MELF, E Bulk Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
JANTX1N4249

JANTX1N4249

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

8,161 -
JANTX1N4249

数据表

- A, Axial Bulk Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1000 V - 1A Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5804E3

1N5804E3

DIODE GEN PURP 100V 1A A AXIAL

Microchip Technology

1 -
1N5804E3

数据表

- Axial Bulk Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N5809E3

1N5809E3

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

9,957 -
1N5809E3

数据表

- B, Axial Bulk Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 6A - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N6642U/TR

JANTX1N6642U/TR

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

7,303 -
JANTX1N6642U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6642US/TR

JANTX1N6642US/TR

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

4,646 -
JANTX1N6642US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JAN1N5802

JAN1N5802

DIODE GEN PURP 50V 2.5A AXIAL

Microchip Technology

7,329 -
JAN1N5802

数据表

- A, Axial Bulk Active Standard 50 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5807

JANTX1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,359 -
JANTX1N5807

数据表

- B, Axial Bulk Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
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