| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3614DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
5,343 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5616US/TRDIODE GEN PURP 400V 1A D-5A Microchip Technology |
8,196 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5550USDIODE GEN PURP 200V 3A D-5B Microchip Technology |
6,950 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTX1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
8,161 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5804E3DIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
1 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5809E3DIODE GEN PURP 100V 6A B AXIAL Microchip Technology |
9,957 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 6A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N6642U/TRDIODE GEN PURP 75V 300MA D-5B Microchip Technology |
7,303 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTX1N6642US/TRDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
4,646 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JAN1N5802DIODE GEN PURP 50V 2.5A AXIAL Microchip Technology |
7,329 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 2.5A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
6,359 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |