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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5711-1/TRDIODE SCHOTTKY 50V 33MA DO35 Microchip Technology |
4,418 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANTX1N5806US/TRDIODE GEN PURP 150V 1A D-5A Microchip Technology |
9,012 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 150 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTX1N5417/TRDIODE GEN PURP 200V 3A Microchip Technology |
5,809 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5416/TRDIODE GEN PURP 100V 3A Microchip Technology |
8,008 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N6661/TRDIODE GEN PURP 225V 500MA DO35 Microchip Technology |
4,612 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5553DIODE GEN PURP 800V 3A AXIAL Microchip Technology |
9,356 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5554DIODE GEN PURP 1KV 3A AXIAL Microchip Technology |
5,666 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | 3A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5552USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
6,263 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
1N6639DIODE GEN PURP 75V 300MA DO35 Microchip Technology |
4,317 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | - | - | 300mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N6640DIODE GEN PURPOSE Microchip Technology |
8,798 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
