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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
3,721 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N4245USDIODE GEN PURP 200V 1A MELF-1 Microchip Technology |
2,324 | - |
|
数据表 |
- | SQ-MELF | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
|
|
1N4247USDIODE GEN PURP 600V 1A MELF-1 Microchip Technology |
6,455 | - |
|
数据表 |
- | SQ-MELF | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | 1A | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
|
|
1N4249USDIODE GEN PURP 1KV 1A MELF-1 Microchip Technology |
7,306 | - |
|
数据表 |
- | SQ-MELF | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1000 V | - | 1A | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
|
|
1N4246USDIODE GEN PURP 400V 1A MELF-1 Microchip Technology |
7,163 | - |
|
数据表 |
- | SQ-MELF | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 400 V | - | 1A | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
|
|
1N4248USDIODE GEN PURP 800V 1A MELF-1 Microchip Technology |
3,899 | - |
|
数据表 |
- | SQ-MELF | Bulk | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | 1A | - | - | Surface Mount | MELF-1 | -65°C ~ 175°C |
|
|
1N6643UDIODE GP 75V 300MA SQ-MELF B Microchip Technology |
4,007 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | 300mA | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 200°C |
|
APT15DQ100KGDIODE GEN PURP 1KV 15A TO220 Microchip Technology |
593 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 235 ns | 100 µA @ 1000 V | - | 15A | - | - | Through Hole | TO-220 [K] | -55°C ~ 175°C |
|
JANTXV1N3595-1/TRDIODE GEN PURP 125V 150MA Microchip Technology |
4,065 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 125 V | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
5,507 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
