| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N6642UDIODE GEN PURP 75V 300MA D-5B Microchip Technology |
4,708 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
1N6661DIODE GEN PURP 225V 500MA DO35 Microchip Technology |
9,900 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
1N5418/TRDIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology |
2,244 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N4248/TRDIODE GEN PURP 800V 1A E3 Microchip Technology |
3,523 | - |
|
数据表 |
- | E3 | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | 1A | Military | MIL-PRF-19500/286 | - | E3 | -65°C ~ 175°C |
|
JANTXV1N3595-1DIODE GEN PURP 125V 150MA DO204 Microchip Technology |
8,883 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
7,848 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JANTX1N6638US/TRDIODE GP 125V 300MA B SQ-MELF Microchip Technology |
2,591 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | - | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTX1N6638U/TRDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
3,412 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
|
1N5623E3HERMETICALLY SEALED GLASS RECTIF Microchip Technology |
7,289 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N5623/TRDIODE GEN PURP 1KV 1A Microchip Technology |
8,207 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1 V | 15pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |