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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N6642U

JANTX1N6642U

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

4,708 -
JANTX1N6642U

数据表

- SQ-MELF, E Bulk Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
1N6661

1N6661

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

9,900 -
1N6661

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - 500mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5418/TR

1N5418/TR

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

2,244 -
1N5418/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N4248/TR

JANTX1N4248/TR

DIODE GEN PURP 800V 1A E3

Microchip Technology

3,523 -
JANTX1N4248/TR

数据表

- E3 Tape & Reel (TR) Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - 1A Military MIL-PRF-19500/286 - E3 -65°C ~ 175°C
JANTXV1N3595-1

JANTXV1N3595-1

DIODE GEN PURP 125V 150MA DO204

Microchip Technology

8,883 -
JANTXV1N3595-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5616US

JAN1N5616US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,848 -
JAN1N5616US

数据表

- SQ-MELF, A Bulk Active Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JANTX1N6638US/TR

JANTX1N6638US/TR

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

2,591 -
JANTX1N6638US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N6638U/TR

JANTX1N6638U/TR

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

3,412 -
JANTX1N6638U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V - 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
1N5623E3

1N5623E3

HERMETICALLY SEALED GLASS RECTIF

Microchip Technology

7,289 -
1N5623E3

数据表

- - Bulk Active - - - - - - - - - - - - -
1N5623/TR

1N5623/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

8,207 -
1N5623/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V 15pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
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