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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHP22N60AE-BE3

SIHP22N60AE-BE3

N-CHANNEL 600V

Vishay Siliconix

1,944 -
SIHP22N60AE-BE3

数据表

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 180mOhm @ 11A, 10V Through Hole 4V @ 250µA 96 nC @ 10 V 600 V ±30V 1451 pF @ 100 V - - TO-220AB - 179W (Tc) -55°C ~ 150°C (TJ)
P3M171K0K3

P3M171K0K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor

3,426 -
P3M171K0K3

数据表

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 6A 15V 1.4Ohm @ 2A, 15V Through Hole 2.2V @ 2mA (Typ) - 1700 V +19V, -8V - - - TO-247-3L - 68W -55°C ~ 175°C (TJ)
DMTH8008LPSWQ-13

DMTH8008LPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

9,531 -
DMTH8008LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 91A (Tc) 4.5V, 10V 7.8mOhm @ 14A, 10V Surface Mount, Wettable Flank 2.8V @ 1mA 41.2 nC @ 10 V 80 V ±20V 2345 pF @ 40 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.6W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
P3M12080K3

P3M12080K3

SICFET N-CH 1200V 47A TO-247-3

PN Junction Semiconductor

2,339 -
P3M12080K3

数据表

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 47A 15V 96mOhm @ 20A, 15V Through Hole 2.4V @ 5mA (Typ) - 1200 V +21V, -8V - - - TO-247-3L - 221W -55°C ~ 175°C (TJ)
P3M06040K3

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor

7,418 -
P3M06040K3

数据表

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 68A 15V 50mOhm @ 40A, 15V Through Hole 2.4V @ 7.5mA (Typ) - 650 V +20V, -8V - - - TO-247-3L - 254W -55°C ~ 175°C (TJ)
FDP8878

FDP8878

MOSFET N-CH 30V 40A TO220-3

onsemi

5,726 -
FDP8878

数据表

PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 15mOhm @ 40A, 10V Through Hole 2.5V @ 250µA 23 nC @ 10 V 30 V ±20V 1235 pF @ 15 V - - TO-220-3 - 40.5W (Tc) -55°C ~ 175°C (TJ)
P3M12160K3

P3M12160K3

SICFET N-CH 1200V 19A TO-247-3

PN Junction Semiconductor

4,073 -
P3M12160K3

数据表

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 19A 15V 192mOhm @ 10A, 15V Through Hole 2.4V @ 2.5mA (Typ) - 1200 V +21V, -8V - - - TO-247-3L - 110W -55°C ~ 175°C (TJ)
IPD031N03LGBTMA1

IPD031N03LGBTMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

6,036 -
IPD031N03LGBTMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 51 nC @ 10 V 30 V ±20V 5300 pF @ 15 V - - PG-TO252-3-11 - 94W (Tc) -55°C ~ 175°C (TJ)
P3M12080K4

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

PN Junction Semiconductor

4,112 -
P3M12080K4

数据表

P3M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 47A 15V 96mOhm @ 20A, 15V Through Hole 2.4V @ 5mA (Typ) - 1200 V +21V, -8V - - - TO-247-4L - 221W -55°C ~ 175°C (TJ)
DMP3007SPSQ-13

DMP3007SPSQ-13

MOSFET 25V~30V POWERDI5060-8

Diodes Incorporated

3,005 -
DMP3007SPSQ-13

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 7mOhm @ 15A, 10V - 3V @ 250µA 64.2 nC @ 10 V 30 V ±25V 2826 pF @ 15 V AEC-Q101 - - Automotive 1.4W (Ta) -55°C ~ 150°C (TJ)
P3M06060T3

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor

6,339 -
P3M06060T3

数据表

P3M TO-220-2 Tube Active N-Channel SiCFET (Silicon Carbide) 46A 15V 79mOhm @ 20A, 15V Through Hole 2.2V @ 20mA (Typ) - 650 V +20V, -8V - - - TO-220-2L - 170W -55°C ~ 175°C (TJ)
DMP4025LSSQ-13

DMP4025LSSQ-13

MOSFET P-CH 40V 6A 8SO

Diodes Incorporated

2,917 -
DMP4025LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 33.7 nC @ 10 V 40 V ±20V 1640 pF @ 20 V AEC-Q101 - 8-SO Automotive 1.52W (Ta) -55°C ~ 150°C (TJ)
FDPF18N50T-G

FDPF18N50T-G

FDPF18N50T-G

onsemi

9,360 -
FDPF18N50T-G

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
TSM4NB60CI C0G

TSM4NB60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation

3,570 -
TSM4NB60CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - ITO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
IRFU2405PBFAKLA1

IRFU2405PBFAKLA1

MOSFET N-CH

Infineon Technologies

9,785 -
IRFU2405PBFAKLA1

数据表

* - Tube Obsolete - - - - - - - - - - - - - - - - -
IRF5803

IRF5803

MOSFET P-CH 40V 3.4A MICRO6

Infineon Technologies

7,100 -
IRF5803

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1110 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -
FDMT800120DC-22897

FDMT800120DC-22897

FET 120V 4.2 MOHM PQFN88

onsemi

2,846 -
FDMT800120DC-22897

数据表

PowerTrench® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 128A (Tc) 6V, 10V 4.2mOhm @ 20A, 10V Surface Mount 4V @ 250µA 107 nC @ 10 V 120 V ±20V 7850 pF @ 60 V - - 8-Dual Cool™88 - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
STP270N8F7W

STP270N8F7W

MOSFET N CH 80V 180A TO-220AB

STMicroelectronics

6,875 -
STP270N8F7W

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 2.5mOhm @ 90A, 10V Through Hole 4V @ 250µA 193 nC @ 10 V 80 V ±20V 13600 pF @ 50 V - - TO-220 - 315W (Tc) -55°C ~ 175°C (TJ)
DMJ65H430SCTI

DMJ65H430SCTI

MOSFET BVDSS: 501V~650V ITO-220A

Diodes Incorporated

7,837 -
DMJ65H430SCTI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 430mOhm @ 5A, 10V Through Hole 5V @ 250µA 24.5 nC @ 10 V 650 V ±30V 775 pF @ 100 V - - ITO220AB-N (Type HE) - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
BSO200P03SHXUMA1

BSO200P03SHXUMA1

MOSFET P-CH 30V 7.4A 8DSO

Infineon Technologies

6,791 -
BSO200P03SHXUMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 7.4A (Ta) 10V 20mOhm @ 9.1A, 10V Surface Mount 1.5V @ 100µA 54 nC @ 10 V 30 V ±25V 2330 pF @ 25 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
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