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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

MOSFET N-CHANNEL_30/40V

Infineon Technologies

602 -
IPB80N04S2H4ATMA2

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.7mOhm @ 80A, 10V Surface Mount 4V @ 250µA 148 nC @ 10 V 40 V ±20V 4400 pF @ 25 V - - PG-TO263-3-2 - 300W (Tc) -55°C ~ 175°C (TJ)
STF12N65M5

STF12N65M5

MOSFET N-CH 650V 8.5A TO220FP

STMicroelectronics

128 -
STF12N65M5

数据表

MDmesh™ V TO-220-5 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8.5A (Tc) 10V 430mOhm @ 4.3A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 650 V ±25V 900 pF @ 100 V - - TO-220FP - 25W (Tc) 150°C (TJ)
IRF640STRRPBF

IRF640STRRPBF

MOSFET N-CH 200V 18A TO263

Vishay Siliconix

1,458 -
IRF640STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 11A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 200 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
R6009ENXC7G

R6009ENXC7G

600V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1,000 -
R6009ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 535mOhm @ 2.8A, 10V Through Hole 4V @ 1mA 23 nC @ 10 V 600 V ±20V 430 pF @ 25 V - - TO-220FM - 48W (Tc) 150°C (TJ)
IRFZ48PBF

IRFZ48PBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

978 -
IRFZ48PBF

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 18mOhm @ 43A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 60 V ±20V 2400 pF @ 25 V - - TO-220AB - 190W (Tc) -55°C ~ 175°C (TJ)
IRFZ48RPBF

IRFZ48RPBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

948 -
IRFZ48RPBF

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 18mOhm @ 43A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 60 V ±20V 2400 pF @ 25 V - - TO-220AB - 190W (Tc) -55°C ~ 175°C (TJ)
IRF740ALPBF

IRF740ALPBF

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix

615 -
IRF740ALPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 550mOhm @ 6A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 400 V ±30V 1030 pF @ 25 V - - I2PAK - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
IRF740ASTRLPBF

IRF740ASTRLPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix

550 -
IRF740ASTRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 550mOhm @ 6A, 10V Surface Mount 4V @ 250µA 36 nC @ 10 V 400 V ±30V 1030 pF @ 25 V - - TO-263 (D2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
R6009KNXC7G

R6009KNXC7G

600V 9A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

547 -
R6009KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 535mOhm @ 2.8A, 10V Through Hole 5V @ 1mA 16.5 nC @ 10 V 600 V ±20V 540 pF @ 25 V - - TO-220FM - 48W (Tc) 150°C (TJ)
FDMC86520DC

FDMC86520DC

MOSFET N-CH 60V 17A/40A DLCOOL33

onsemi

5,875 -
FDMC86520DC

数据表

Dual Cool™, PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 40A (Tc) 8V, 10V 6.3mOhm @ 17A, 10V Surface Mount 4.5V @ 250µA 40 nC @ 10 V 60 V ±20V 2790 pF @ 30 V - - Dual Cool ™ 33 - 3W (Ta), 73W (Tc) -55°C ~ 150°C (TJ)
STL35N75LF3

STL35N75LF3

MOSFET N-CH 75V 32A POWERFLAT

STMicroelectronics

8,535 -
STL35N75LF3

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 4.5V, 10V 25mOhm @ 4A, 10V Surface Mount 2.4V @ 250µA 7.5 nC @ 4.5 V 75 V ±20V 800 pF @ 50 V - - PowerFlat™ (3.3x3.3) - 50W (Tc) -55°C ~ 150°C (TJ)
FDD3580

FDD3580

MOSFET N-CH 80V 7.7A D-PAK

onsemi

3,978 -
FDD3580

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V Surface Mount 4V @ 250µA 49 nC @ 10 V 80 V ±20V 1760 pF @ 40 V - - TO-252AA - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
STS6PF30L

STS6PF30L

MOSFET P-CH 30V 6A 8SO

STMicroelectronics

8,287 -
STS6PF30L

数据表

STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Tc) 5V, 10V 30mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 28 nC @ 5 V 30 V ±16V 1670 pF @ 25 V - - 8-SOIC - 2.5W (Tc) 150°C (TJ)
RJK0853DPB-00#J5

RJK0853DPB-00#J5

MOSFET N-CH 80V 40A LFPAK

Renesas Electronics Corporation

4,910 -
RJK0853DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount - 40 nC @ 4.5 V 80 V ±20V 6170 pF @ 10 V - - LFPAK - 65W (Tc) 150°C (TJ)
FDD4243-G

FDD4243-G

FDD4243-G

onsemi

4,368 -
FDD4243-G

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.7A (Ta), 14A (Tc) 4.5V, 10V 44mOhm @ 6.7A, 10V Surface Mount 3V @ 250µA 29 nC @ 10 V 40 V ±20V 1550 pF @ 20 V - - TO-252AA - 42W (Tc) -55°C ~ 150°C (TJ)
SIHH240N60E-T1-GE3

SIHH240N60E-T1-GE3

MOSFET N-CH 600V 12A PPAK 8 X 8

Vishay Siliconix

2,736 -
SIHH240N60E-T1-GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 240mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 600 V ±30V 783 pF @ 100 V - - PowerPAK® 8 x 8 - 89W (Tc) -55°C ~ 150°C (TJ)
NTMFS4931NT1G-IRH1

NTMFS4931NT1G-IRH1

NTMFS4931NT1G-IRH1

onsemi

9,388 -
NTMFS4931NT1G-IRH1

数据表

- 8-PowerTDFN, 5 Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta), 246A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 128 nC @ 10 V 30 V ±20V 9821 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 950mW (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
STB100NF04T4

STB100NF04T4

MOSFET N-CH 40V 120A D2PAK

STMicroelectronics

1,563 -
STB100NF04T4

数据表

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.6mOhm @ 50A, 10V Surface Mount 4V @ 250µA 150 nC @ 10 V 40 V ±20V 5100 pF @ 25 V AEC-Q101 - D2PAK Automotive 300W (Tc) -55°C ~ 175°C (TJ)
FQP19N20-T

FQP19N20-T

MOSFET N-CH 200V 28A TO220-3

onsemi

7,836 -
FQP19N20-T

数据表

QFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1600 pF @ 25 V - - TO-220-3 - 140W (Tc) -55°C ~ 150°C (TJ)
FQP50N06L-EPKE0003

FQP50N06L-EPKE0003

MOSFET N-CH 60V 65A TO220-3

onsemi

9,018 -
FQP50N06L-EPKE0003

数据表

QFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V Through Hole 2.5V @ 250µA 32 nC @ 5 V 60 V ±20V 1630 pF @ 25 V - - TO-220-3 - 121W (Tc) -55°C ~ 175°C (TJ)
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