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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies

1,425 -
IPP034NE7N3GXKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.4mOhm @ 100A, 10V Through Hole 3.8V @ 155µA 117 nC @ 10 V 75 V ±20V 8130 pF @ 37.5 V - - PG-TO220-3 - 214W (Tc) -55°C ~ 175°C (TJ)
RCJ220N25TL

RCJ220N25TL

MOSFET N-CH 250V 22A LPTS

Rohm Semiconductor

946 -
RCJ220N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 140mOhm @ 11A, 10V Surface Mount 5V @ 1mA 60 nC @ 10 V 250 V ±30V 3200 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
NTMYS1D2N04CLTWG

NTMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

onsemi

3,367 -
NTMYS1D2N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 44A (Ta), 258A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V Surface Mount 2V @ 180µA 109 nC @ 10 V 40 V ±20V 6330 pF @ 20 V - - LFPAK4 (5x6) - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ)
CSD18542KTTT

CSD18542KTTT

MOSFET N-CH 60V 200A/170A DDPAK

Texas Instruments

288 -
CSD18542KTTT

数据表

NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 170A (Tc) 4.5V, 10V 4mOhm @ 100A, 10V Surface Mount 2.2V @ 250µA 57 nC @ 10 V 60 V ±20V 5070 pF @ 30 V - - TO-263 (DDPAK-3) - 250W (Ta) -55°C ~ 175°C (TJ)
NTD250N65S3H

NTD250N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,495 -
NTD250N65S3H

数据表

SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 250mOhm @ 6.5A, 10V Surface Mount 4V @ 1.1mA 24 nC @ 10 V 650 V ±30V 1261 pF @ 400 V - - TO-252 (DPAK) - 106W (Tc) -55°C ~ 150°C (TJ)
DMTH41M2SPSQ-13

DMTH41M2SPSQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,112 -
DMTH41M2SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 225A (Tc) 10V 1.2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 138 nC @ 10 V 40 V ±20V 11085 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type K) Automotive 3.4W (Ta), 158W (Tc) -55°C ~ 175°C (TJ)
MCACL110N08Y-TP

MCACL110N08Y-TP

MOSFET N-CH 80 110A DFN5060

Micro Commercial Co

9,098 -
MCACL110N08Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 6V, 10V 3.9mOhm @ 55A, 10V Surface Mount 4V @ 250µA 68 nC @ 10 V 80 V ±20V 5290 pF @ 40 V - - DFN5060 - 125W -55°C ~ 150°C (TJ)
IQE030N06NM5SCATMA1

IQE030N06NM5SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon Technologies

4,990 -
IQE030N06NM5SCATMA1

数据表

OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 132A (Tc) 6V, 10V 3mOhm @ 20A, 10V Surface Mount 3.3V @ 50µA 49 nC @ 10 V 60 V ±20V 3800 pF @ 30 V - - PG-WHSON-8-1 - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
R6011KND3TL1

R6011KND3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor

2,468 -
R6011KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Surface Mount 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
FCPF850N80Z

FCPF850N80Z

MOSFET N-CH 800V 6A TO220F

onsemi

905 -
FCPF850N80Z

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 850mOhm @ 3A, 10V Through Hole 4.5V @ 600µA 29 nC @ 10 V 800 V ±20V 1315 pF @ 100 V - - TO-220F-3 - 28.4W (Tc) -55°C ~ 150°C (TJ)
IPB040N08NF2SATMA1

IPB040N08NF2SATMA1

MOSFET N-CH 80V 107A D2PAK

Infineon Technologies

790 -
IPB040N08NF2SATMA1

数据表

StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 107A (Tc) 6V, 10V 4mOhm @ 80A, 10V Surface Mount 3.8V @ 85µA 81 nC @ 10 V 80 V ±20V 3800 pF @ 40 V - - PG-TO263-3 - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
STP150NF04

STP150NF04

MOSFET N-CH 40V 80A TO220AB

STMicroelectronics

431 -
STP150NF04

数据表

STripFET™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 7mOhm @ 40A, 10V Through Hole 4V @ 250µA 150 nC @ 10 V 40 V ±20V 3650 pF @ 25 V - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
R6011END3TL1

R6011END3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor

300 -
R6011END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Surface Mount 4V @ 1mA 32 nC @ 10 V 600 V ±20V 670 pF @ 25 V - - TO-252 - 124W (Tc) 150°C (TJ)
RD3P08BBDTL

RD3P08BBDTL

MOSFET N-CH 100V 80A TO252

Rohm Semiconductor

9,410 -
RD3P08BBDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 11.6mOhm @ 80A, 10V Surface Mount 4V @ 1mA 37 nC @ 10 V 100 V ±20V 1940 pF @ 50 V - - TO-252 - 119W (Tc) 150°C (TJ)
IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

MOSFET N-CH 80V 165A 8HSOF

Infineon Technologies

1,980 -
IAUT165N08S5N029ATMA2

数据表

OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V Surface Mount 3.8V @ 108µA 90 nC @ 10 V 80 V ±20V 6370 pF @ 40 V - - PG-HSOF-8-1 - 167W (Tc) -55°C ~ 175°C (TJ)
STF10LN80K5

STF10LN80K5

MOSFET N-CH 800V 8A TO220FP

STMicroelectronics

799 -
STF10LN80K5

数据表

MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 630mOhm @ 4A, 10V Through Hole 5V @ 100µA 15 nC @ 10 V 800 V ±30V 427 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
IRFBC30APBF

IRFBC30APBF

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

906 -
IRFBC30APBF

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V Through Hole 4.5V @ 250µA 23 nC @ 10 V 600 V ±30V 510 pF @ 25 V - - TO-220AB - 74W (Tc) -55°C ~ 150°C (TJ)
TSM019NH04CR RLG

TSM019NH04CR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

5,000 -
TSM019NH04CR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 100A (Tc) 7V, 10V 1.9mOhm @ 50A, 10V Surface Mount 3.6V @ 250µA 89 nC @ 10 V 40 V ±20V 6029 pF @ 25 V - - 8-PDFNU (5x6) - 150W (Tc) -55°C ~ 175°C (TJ)
TSM019NH04LCR RLG

TSM019NH04LCR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,965 -
TSM019NH04LCR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V Surface Mount 2.2V @ 250µA 104 nC @ 10 V 40 V ±16V 6282 pF @ 25 V - - 8-PDFNU (5x6) - 150W (Tc) -55°C ~ 175°C (TJ)
STD5N95K3

STD5N95K3

MOSFET N-CH 950V 4A DPAK

STMicroelectronics

2,485 -
STD5N95K3

数据表

SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.5Ohm @ 2A, 10V Surface Mount 5V @ 100µA 19 nC @ 10 V 950 V ±30V 460 pF @ 25 V - - DPAK - 90W (Tc) -55°C ~ 150°C (TJ)
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