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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTD5C684NL

NTD5C684NL

MOSFET N-CH 60V 46A DPAK

onsemi

3,582 -
NTD5C684NL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 27A (Tc) 4.5V, 10V 16.5mOhm @ 15A, 10V Surface Mount 2.1V @ 20µA 9.6 nC @ 10 V 60 V ±20V 700 pF @ 25 V - - DPAK - 3.6W (Ta), 25W (Tc) -55°C ~ 175°C (TJ)
FDC6N50NZFTM

FDC6N50NZFTM

FDC6N50NZFTM

onsemi

4,858 -
FDC6N50NZFTM

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PMX3000ENEZ

PMX3000ENEZ

PMX3000ENEZ

Nexperia USA Inc.

3,542 -
PMX3000ENEZ

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PJZ9NA90_T0_10001

PJZ9NA90_T0_10001

MOSFET

Panjit International Inc.

9,136 -
PJZ9NA90_T0_10001

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 1.4Ohm @ 4.5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 900 V ±30V 1634 pF @ 25 V - - TO-3PL - 240W (Tc) -55°C ~ 150°C (TJ)
2N7002K

2N7002K

N-CHANNEL SMALL SIGNAL MOSFET

HY Electronic (Cayman) Limited

9,056 -
2N7002K

数据表

2N7002K - Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 340mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2.5V @ 1mA - 60 V ±20V 40 pF @ 10 V - - SOT-23 - 350mW (Ta) 150°C (TJ)
STP25N60M2-EP

STP25N60M2-EP

MOSFET N-CH 600V 18A TO220

STMicroelectronics

1,006 -
STP25N60M2-EP

数据表

MDmesh™ M2-EP TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 188mOhm @ 9A, 10V Through Hole 4.75V @ 250µA 29 nC @ 10 V 600 V ±25V 1090 pF @ 100 V - - TO-220 - 150W (Tc) -55°C ~ 150°C (TJ)
CMS2301T-HF

CMS2301T-HF

MOSFET P-CH 20V 3A SOT23-3

Comchip Technology

7,872 -
CMS2301T-HF

数据表

CMS TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 2.5V, 4.5V 110mOhm @ 3A, 4.5V Surface Mount 1V @ 250µA 12 nC @ 2.5 V 20 V ±12V 405 pF @ 10 V - - SOT-23-3 - 1W (Ta) -55°C ~ 150°C (TJ)
IRF9Z34STRRPBF

IRF9Z34STRRPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix

361 -
IRF9Z34STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 11A, 10V Surface Mount 4V @ 250µA 34 nC @ 10 V 60 V ±20V 1100 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ)
CMS3400-HF

CMS3400-HF

MOSFET N-CH 30V 5.8A SOT23-3

Comchip Technology

2,195 -
CMS3400-HF

数据表

CMS TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Ta) 2.5V, 10V 41mOhm @ 5.8A, 10V Surface Mount 1.4V @ 250µA 9.5 nC @ 4.5 V 30 V ±12V 820 pF @ 15 V - - SOT-23-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
IXFP34N65X2M

IXFP34N65X2M

MOSFET N-CH 650V 34A TO220

IXYS

275 -
IXFP34N65X2M

数据表

HiPerFET™, Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 100mOhm @ 17A, 10V Through Hole 5V @ 1.5mA 56 nC @ 10 V 650 V ±30V 3230 pF @ 25 V - - TO-220 Isolated Tab - 40W (Tc) -55°C ~ 150°C (TJ)
CMS0103M-HF

CMS0103M-HF

MOSFET N-CH 100V 3A SOT89-3

Comchip Technology

9,356 -
CMS0103M-HF

数据表

CMS TO-243AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 160mOhm @ 3A, 10V Surface Mount 2V @ 250µA 20 nC @ 10 V 100 V ±20V 650 pF @ 50 V - - SOT-89-3L - 1.5W (Ta) -55°C ~ 150°C (TJ)
DMN3030LFG-13

DMN3030LFG-13

DMN3030LFG-13

Diodes Incorporated

6,198 -
DMN3030LFG-13

数据表

- 8-PowerVDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 2.1V @ 250µA 17.4 nC @ 10 V 30 V ±25V 751 pF @ 10 V AEC-Q101 - POWERDI3333-8 Automotive 900mW (Ta) -55°C ~ 150°C (TJ)
IPP014N06NF2SAKMA1

IPP014N06NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

8,921 -
IPP014N06NF2SAKMA1

数据表

StrongIRFET™2 TO-220-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 39A (Ta), 198A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V Through Hole 3.3V @ 246µA 305 nC @ 10 V 60 V ±20V 13800 pF @ 30 V - - PG-TO220-3-U05 - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ)
IRLML6401TRPBF

IRLML6401TRPBF

MOSFET

Infineon Technologies

330,000

1+:¥0.679700

3000+:¥0.485800

IRLML6401TRPBF

数据表

HEXFET® TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 1.8V, 4.5V 50mOhm @ 4.3A, 4.5V Surface Mount 950mV @ 250µA 15 nC @ 5 V 12 V ±8V 830 pF @ 10 V - - PG-SOT23-3-901 - 1.3W (Ta) -55°C ~ 150°C (TJ)
IPP881NE7NGXKSA1

IPP881NE7NGXKSA1

MOSFET

Infineon Technologies

3,296 -
IPP881NE7NGXKSA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRF7420TRPBF-1

IRF7420TRPBF-1

MOSFET

Infineon Technologies

6,443 -
IRF7420TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 11.5A (Ta) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V Surface Mount 900mV @ 250µA 38 nC @ 4.5 V 12 V ±8V 3529 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDMC035N10X1

FDMC035N10X1

N-CHANNEL POWERTRENCH MOSFET 100

onsemi

4,331 -
FDMC035N10X1

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 6V, 10V 37mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 2675 pF @ 50 V - - 8-PQFN (3.3x3.3), Power33 - 2.3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
STD40P3LLH6

STD40P3LLH6

MOSFET P-CH 30V 40A DPAK

STMicroelectronics

3,499 -
STD40P3LLH6

数据表

STripFET™ H6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 4.5 V 30 V ±20V 2615 pF @ 25 V - - DPAK - 60W (Tc) -55°C ~ 175°C (TJ)
AOTF2916L

AOTF2916L

MOSFET N-CH 100V 5A/17A TO220-3F

Alpha & Omega Semiconductor Inc.

6,633 -
AOTF2916L

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 17A (Tc) 4.5V, 10V 34mOhm @ 10A, 10V Through Hole 2.7V @ 250µA 20 nC @ 10 V 100 V ±20V 870 pF @ 50 V - - TO-220F - 2.1W (Ta), 23.5W (Tc) -55°C ~ 175°C (TJ)
SIHD5N50D-E3

SIHD5N50D-E3

MOSFET N-CH 500V 5.3A DPAK

Vishay Siliconix

4,670 -
SIHD5N50D-E3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 500 V ±30V 325 pF @ 100 V - - TO-252AA - 104W (Tc) -55°C ~ 150°C (TJ)
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