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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF540STRRPBF

IRF540STRRPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

1,476 -
IRF540STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 77mOhm @ 17A, 10V Surface Mount 4V @ 250µA 72 nC @ 10 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
SIHP240N60E-GE3

SIHP240N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix

159 -
SIHP240N60E-GE3

数据表

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 240mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 23 nC @ 10 V 600 V ±30V 795 pF @ 100 V - - TO-220AB - 78W (Tc) -55°C ~ 150°C (TJ)
STL7LN65K5AG

STL7LN65K5AG

MOSFET N-CH 650V 5A PWRFLAT VHV

STMicroelectronics

2,979 -
STL7LN65K5AG

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 5V @ 100µA 11.7 nC @ 10 V 650 V ±30V 270 pF @ 100 V AEC-Q101 - PowerFlat™ (5x6) VHV Automotive 79W (Tc) -55°C ~ 150°C (TJ)
NTP190N65S3HF

NTP190N65S3HF

MOSFET N-CH 650V 20A TO220-3

onsemi

724 -
NTP190N65S3HF

数据表

FRFET®, SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 5V @ 430µA 34 nC @ 10 V 650 V ±30V 1610 pF @ 400 V - - TO-220-3 - 162W (Tc) -55°C ~ 150°C (TJ)
SPD30N06S2-23

SPD30N06S2-23

MOSFET N-CH 55V 30A TO252-3

Infineon Technologies

8,041 -
SPD30N06S2-23

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 23mOhm @ 21A, 10V Surface Mount 4V @ 50µA 32 nC @ 10 V 55 V ±20V 1250 pF @ 25 V - - PG-TO252-3-11 - - -
BUK9222-55A,127

BUK9222-55A,127

MOSFET N-CH 55V 48A DPAK

Nexperia USA Inc.

9,392 -
BUK9222-55A,127

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 20mOhm @ 25A, 10V Surface Mount 2V @ 1mA - 55 V ±15V 2210 pF @ 25 V AEC-Q101 - DPAK Automotive 103W (Tc) -55°C ~ 175°C (TJ)
AONS38108

AONS38108

LINEAR IC

Alpha & Omega Semiconductor Inc.

4,837 -
AONS38108

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Ta), 355A (Tc) 6V, 10V 1mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 80 nC @ 10 V 25 V ±16V 4220 pF @ 12.5 V - - 8-DFN (5x6) - 4.8W (Ta), 192W (Tc) -55°C ~ 150°C (TJ)
DMTH10H015LPSWQ-13

DMTH10H015LPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,012 -
DMTH10H015LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 44A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 33.3 nC @ 10 V 100 V ±20V 1871 pF @ 50 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.8W (Ta), 46W (Tc) -55°C ~ 175°C (TJ)
TSM05N03CW

TSM05N03CW

30V, 5A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,548 -
TSM05N03CW

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 4.5V, 10V 60mOhm @ 5A, 10V Surface Mount 3V @ 250µA 7 nC @ 5 V 30 V ±20V 555 pF @ 15 V - - SOT-223 - 3W (Ta) -55°C ~ 150°C (TJ)
AON6284A

AON6284A

MOSFET N-CHANNEL 80V 48A 8DFN

Alpha & Omega Semiconductor Inc.

7,703 -
AON6284A

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 52 nC @ 10 V 80 V ±20V 2540 pF @ 40 V - - 8-DFN (5x6) - 56W (Tc) -55°C ~ 150°C (TJ)
IRLIZ24GPBF

IRLIZ24GPBF

MOSFET N-CHANNEL 60V 14A TO220

Vishay Siliconix

7,871 -
IRLIZ24GPBF

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V Through Hole 2V @ 250µA 18 nC @ 5 V 60 V ±10V 870 pF @ 25 V - - TO-220 Full Pack - 37W (Tc) -55°C ~ 175°C (TJ)
IPC055N03L3X1SA1

IPC055N03L3X1SA1

MOSFET N-CH 30V 1A SAWN ON FOIL

Infineon Technologies

6,247 -
IPC055N03L3X1SA1

数据表

OptiMOS™ Die Bulk Active N-Channel MOSFET (Metal Oxide) 1A (Tj) 4.5V, 10V 50mOhm @ 2A, 10V Surface Mount 2.2V @ 250µA - 30 V - - - - Sawn on foil - - -
IRLR014NTRL

IRLR014NTRL

MOSFET N-CH 55V 10A DPAK

Infineon Technologies

5,622 -
IRLR014NTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V Surface Mount 1V @ 250µA 7.9 nC @ 5 V 55 V ±16V 265 pF @ 25 V - - TO-252AA (DPAK) - 28W (Tc) -55°C ~ 175°C (TJ)
MCG60N06Y-TP

MCG60N06Y-TP

MOSFET

Micro Commercial Co

7,369 -
MCG60N06Y-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.5 nC @ 10 V 60 V ±20V 1666 pF @ 30 V - - DFN3333 - 60W (Tj) -55°C ~ 175°C (TJ)
SIHU5N50D-E3

SIHU5N50D-E3

MOSFET N-CH 500V 5.3A TO251AA

Vishay Siliconix

9,980 -
SIHU5N50D-E3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 500 V ±30V 325 pF @ 100 V - - TO-251AA - 104W (Tc) -55°C ~ 150°C (TJ)
IPD30N12S3L31ATMA2

IPD30N12S3L31ATMA2

MOSFET_(120V 300V)

Infineon Technologies

9,794 -
IPD30N12S3L31ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 31mOhm @ 30A, 10V Surface Mount 2.4V @ 29µA 31 nC @ 10 V 120 V ±20V 1970 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 57W (Tc) -55°C ~ 175°C (TJ)
IRLR3103TRRPBF

IRLR3103TRRPBF

MOSFET N-CH 30V 55A DPAK

Infineon Technologies

9,030 -
IRLR3103TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V Surface Mount 1V @ 250µA 50 nC @ 4.5 V 30 V ±16V 1600 pF @ 25 V - - TO-252AA (DPAK) - 107W (Tc) -55°C ~ 175°C (TJ)
SPB42N03S2L-13 G

SPB42N03S2L-13 G

MOSFET N-CH 30V 42A TO263-3

Infineon Technologies

5,769 -
SPB42N03S2L-13 G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 4.5V, 10V 12.6mOhm @ 21A, 10V Surface Mount 2V @ 37µA 30.5 nC @ 10 V 30 V ±20V 1130 pF @ 25 V - - PG-TO263-3-2 - 83W (Tc) -55°C ~ 175°C (TJ)
FQPF6N60C

FQPF6N60C

MOSFET N-CH 600V 5.5A TO220F

onsemi

7,753 -
FQPF6N60C

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 600 V ±30V 810 pF @ 25 V - - TO-220F-3 - 40W (Tc) -55°C ~ 150°C (TJ)
CMS11N10Q8-HF

CMS11N10Q8-HF

MOSFET N-CH 100V 11A 8SOP

Comchip Technology

8,611 -
CMS11N10Q8-HF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 14mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 75 nC @ 10 V 100 V ±20V 4708 pF @ 25 V - - 8-SOP - 3.1W (Ta) -55°C ~ 150°C (TJ)
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