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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSS138-7-F-79 DIODE Diodes Incorporated	4,808	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	Surface Mount	1.5V @ 250µA	-	50 V	±20V	50 pF @ 10 V	-	-	SOT-23-3	-	300mW (Ta)	-55°C ~ 150°C (TJ)
BSS138W-7-F-79 DIODE Diodes Incorporated	9,596	-	询价单	数据表	-	SC-70, SOT-323	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	Surface Mount	1.5V @ 250µA	-	50 V	±20V	50 pF @ 10 V	-	-	SOT-323	-	200mW (Ta)	-55°C ~ 150°C (TJ)
2N7002T-7-F-79 DIODE Diodes Incorporated	7,557	-	询价单	数据表	-	SOT-523	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	115mA (Ta)	5V, 10V	7.5Ohm @ 50mA, 5V	Surface Mount	2V @ 250µA	-	60 V	±20V	50 pF @ 25 V	-	-	SOT-523	-	150mW (Ta)	-55°C ~ 150°C (TJ)
DMN2025U DIODE Diodes Incorporated	6,995	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Ta)	1.8V, 4.5V	27mOhm @ 6.5A, 4.5V	Surface Mount	900mV @ 250µA	5.9 nC @ 4.5 V	20 V	±12V	485 pF @ 10 V	-	-	SOT-23-3	-	800mW	-55°C ~ 150°C (TJ)
2N7002-13-F DIODE Diodes Incorporated	2,306	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	5V, 10V	5Ohm @ 500mA, 10V	Surface Mount	2.5V @ 250µA	0.23 nC @ 4.5 V	60 V	±20V	50 pF @ 25 V	-	-	SOT-23-3	-	370mW (Ta)	-55°C ~ 150°C (TJ)
DMP2004TK DIODE Diodes Incorporated	4,546	-	询价单	数据表	-	SOT-523	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	430mA (Ta)	1.8V, 4.5V	1.1Ohm @ 430mA, 4.5V	Surface Mount	1V @ 250µA	0.97 nC @ 8 V	20 V	±8V	47 pF @ 16 V	-	-	SOT-523	-	230mW (Ta)	-55°C ~ 150°C (TJ)
MSC025SMA330B4 MOSFET SIC 3300 V 25 MOHM TO-247 Microchip Technology	5,810	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	104A (Tc)	20V	31mOhm @ 40A, 20V	Through Hole	2.7V @ 7mA	410 nC @ 20 V	3300 V	+23V, -10V	8720 pF @ 2640 V	-	-	TO-247-4	-	-	-55°C ~ 150°C (TJ)
IPB042N10NF2SATMA1 TRENCH >=100V Infineon Technologies	5,414	-	询价单	数据表	*	-	Tape & Reel (TR)	Discontinued at Digi-Key	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CMS03N06T-HF MOSFET N-CH 60V 3A SOT23-3 Comchip Technology	7,640	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	4.5V, 10V	105mOhm @ 3A, 10V	Surface Mount	2V @ 250µA	14.6 nC @ 10 V	60 V	±20V	510 pF @ 30 V	-	-	SOT-23-3	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
CMS09N10D-HF MOSFET N-CH 100V 9.6A DPAK Comchip Technology	3,960	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.6A (Tc)	10V	140mOhm @ 6A, 10V	Surface Mount	2.5V @ 250µA	15.5 nC @ 10 V	100 V	±20V	690 pF @ 25 V	-	-	TO-252 (DPAK)	-	30W (Tc)	-55°C ~ 175°C (TJ)
CMS12P03Q8-HF MOSFET P-CH 30V 12A 8SOP Comchip Technology	2,880	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	15mOhm @ 10A, 10V	Surface Mount	2.2V @ 250µA	44.4 nC @ 10 V	30 V	±20V	2419 pF @ 15 V	-	-	8-SOP	-	3W (Tc)	-55°C ~ 150°C (TJ)
AUIRFU8403-701TRL MOSFET Infineon Technologies	8,521	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 76A, 10V	Through Hole	3.9V @ 100µA	99 nC @ 10 V	40 V	±20V	3171 pF @ 25 V	-	-	PG-TO251-3-21	-	99W (Tc)	-55°C ~ 175°C (TJ)
P3M173K0T3 SICFET N-CH 1700V 4A TO-220-3 PN Junction Semiconductor	7,965	-	询价单	数据表	P3M	TO-220-2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	4A	15V	2.6Ohm @ 600mA, 15V	Through Hole	2.2V @ 600µA (Typ)	-	1700 V	+19V, -8V	-	-	-	TO-220-2L	-	75W	-55°C ~ 175°C (TJ)
P3M12025K4 SICFET N-CH 1200V 112A TO-247-4 PN Junction Semiconductor	4,264	-	询价单	数据表	P3M	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	112A	15V	35mOhm @ 50A, 15V	Through Hole	2.2V @ 50mA (Typ)	-	1200 V	+19V, -8V	-	-	-	TO-247-4L	-	577W	-55°C ~ 175°C (TJ)
AON7412 MOSFET N-CH 30V 10A/16A 8DFN Alpha & Omega Semiconductor Inc.	8,596	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta), 16A (Tc)	4V, 10V	20mOhm @ 10A, 10V	Surface Mount	2V @ 250µA	15 nC @ 10 V	30 V	±25V	466 pF @ 15 V	-	-	8-DFN-EP (3x3)	-	3.1W (Ta), 20.8W (Tc)	-55°C ~ 150°C (TJ)
CPH3459-TL-W MOSFET N-CH 200V 500MA 3CPH onsemi	5,314	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	4V, 10V	3.7Ohm @ 250mA, 10V	Surface Mount	2.6V @ 1mA	2.4 nC @ 10 V	200 V	±20V	90 pF @ 20 V	-	-	3-CPH	-	1W (Ta)	150°C (TJ)
DMS2085LSD-13 MOSFET P-CH 20V 3.3A 8SO Diodes Incorporated	6,784	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	3.3A (Ta)	4.5V, 10V	85mOhm @ 3.05A, 10V	Surface Mount	2.2V @ 250µA	7.8 nC @ 10 V	20 V	±20V	353 pF @ 15 V	-	Schottky Diode (Isolated)	8-SO	-	1.1W (Ta)	-55°C ~ 150°C (TJ)
3LN01C-TB-E MOSFET N-CH 30V 150MA 3CP onsemi	7,976	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150mA (Ta)	1.5V, 4V	3.7Ohm @ 80mA, 4V	Surface Mount	-	1.58 nC @ 10 V	30 V	±10V	7 pF @ 10 V	-	-	SC-59-3/CP3	-	250mW (Ta)	150°C (TJ)
IQE030N06NM5CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	6,000	-	询价单	数据表	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 132A (Tc)	6V, 10V	3mOhm @ 20A, 10V	Surface Mount	3.3V @ 50µA	49 nC @ 10 V	60 V	±20V	3800 pF @ 30 V	-	-	PG-WHTFN-9-1	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IQE050N08NM5SCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	5,000	-	询价单	数据表	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 99A (Tc)	6V, 10V	5mOhm @ 20A, 10V	Surface Mount	3.8V @ 49µA	44 nC @ 10 V	80 V	±20V	2900 pF @ 40 V	-	-	PG-WHSON-8-1	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)

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