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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIA443DJ-T1-E3

SIA443DJ-T1-E3

MOSFET P-CH 20V 9A PPAK SC70-6

Vishay Siliconix

9,315 -
SIA443DJ-T1-E3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 45mOhm @ 4.7A, 4.5V Surface Mount 1V @ 250µA 25 nC @ 8 V 20 V ±8V 750 pF @ 10 V - - PowerPAK® SC-70-6 - 3.3W (Ta), 15W (Tc) -55°C ~ 150°C (TJ)
SIA810DJ-T1-E3

SIA810DJ-T1-E3

MOSFET N-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix

7,701 -
SIA810DJ-T1-E3

数据表

LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 1.8V, 4.5V 53mOhm @ 3.7A, 4.5V Surface Mount 1V @ 250µA 11.5 nC @ 8 V 20 V ±8V 400 pF @ 10 V - Schottky Diode (Isolated) PowerPAK® SC-70-6 Dual - 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ)
IRF7478QTRPBF

IRF7478QTRPBF

MOSFET N-CH 60V 7A 8-SOIC

Infineon Technologies

8,560 -
IRF7478QTRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) - 26mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 31 nC @ 4.5 V 60 V - 1740 pF @ 25 V - - 8-SO - - -
MMBF2202PT1

MMBF2202PT1

MOSFET P-CH 20V 0.3A SOT-323

onsemi

6,628 -
MMBF2202PT1

数据表

- SC-70, SOT-323 Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 300mA (Ta) - 2.2Ohm @ 200mA, 10V Surface Mount 2.4V @ 250µA 2.7 nC @ 10 V 20 V - 50 pF @ 5 V - - SC-70-3 (SOT323) - - -
BSH111,215

BSH111,215

MOSFET N-CH 55V 335MA SOT-23

NXP USA Inc.

357,331 -
BSH111,215

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
5HN02M-TL-E

5HN02M-TL-E

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

144,000 -
5HN02M-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
5HP02M-TL-E

5HP02M-TL-E

P-CHANNEL SMALL SIGNAL MOSFET

onsemi

108,000 -
5HP02M-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
PMF780SN,115

PMF780SN,115

MOSFET N-CH 60V 570MA SOT323-3

NXP USA Inc.

4,911 -
PMF780SN,115

数据表

TrenchMOS™ SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 570mA (Ta) 10V 920mOhm @ 300mA, 10V Surface Mount 2V @ 250µA 1.05 nC @ 10 V 60 V ±20V 23 pF @ 30 V - - SC-70 - 560mW (Tc) -55°C ~ 150°C (TJ)
3LN01SP-AC

3LN01SP-AC

NCH 1.5V DRIVE SERIES

onsemi

80,000 -
3LN01SP-AC

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
3LN02C-TB-E

3LN02C-TB-E

NCH 1.5V DRIVE SERIES

onsemi

72,000 -
3LN02C-TB-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
PMN70XPE,115

PMN70XPE,115

NOW NEXPERIA PMN70XPE - SC-74

NXP USA Inc.

41,368 -
PMN70XPE,115

数据表

- SC-74, SOT-457 Bulk Active P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 2.5V, 4.5V 85mOhm @ 2A, 4.5V Surface Mount 1.25V @ 250µA 7.8 nC @ 4.5 V 20 V ±12V 602 pF @ 10 V - - 6-TSOP - 500mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
EC4303C-TL

EC4303C-TL

PCH 4V DRIVE SERIES

onsemi

30,000 -
EC4303C-TL

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK1839-TL-E

2SK1839-TL-E

NCH 0.1A 30V MOSFET

onsemi

24,000 -
2SK1839-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
BSD214SNL6327

BSD214SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

22,000 -
BSD214SNL6327

数据表

OptiMOS™ 2 6-VSSOP, SC-88, SOT-363 Bulk Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 2.5V, 4.5V 140mOhm @ 1.5A, 4.5V Surface Mount 1.2V @ 3.7µA 0.8 nC @ 5 V 20 V ±12V 143 pF @ 10 V - - PG-SOT363-6-6 - 500mW (Ta) -55°C ~ 150°C (TJ)
PMT760EN,135

PMT760EN,135

MOSFET N-CH 100V 900MA SOT223

NXP USA Inc.

2,671 -
PMT760EN,135

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Ta) 4.5V, 10V 950mOhm @ 800mA, 10V Surface Mount 2.5V @ 250µA 3 nC @ 10 V 100 V ±20V 160 pF @ 80 V - - SC-73 - 800mW (Ta), 6.2W (Tc) -55°C ~ 150°C (TJ)
06N06L

06N06L

MOSFET N-CH 60V 5.5A SOT-23-3L

Goford Semiconductor

39,000 -
06N06L

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.5A - 42mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA - - ±20V 765 pF @ 30 V - - SOT-23-3 - 960mW -55°C ~ 150°C (TJ)
2N7002K-EVL-CT

2N7002K-EVL-CT

MOSFET Single,SOT-23,60V,300mA,N

Venkel

20,515 -
2N7002K-EVL-CT

数据表

MST - Strip Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V Surface Mount - 0.8 nC @ 5 V 60 V ±20V 35 pF @ 25 V - - TO-236-3, SC-59, SOT-23-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
MCH5809-TL-E

MCH5809-TL-E

NCH+SBD 2.5V DRIVE SERIES

onsemi

666,000 -
MCH5809-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
PMXB350UPEZ

PMXB350UPEZ

NEXPERIA PMXB350UPE - 20 V, P-CH

NXP Semiconductors

665,986 -
PMXB350UPEZ

数据表

- 3-XDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 1.2V, 4.5V 447mOhm @ 1.2A, 4.5V Surface Mount 950mV @ 250µA 2.3 nC @ 4.5 V 20 V ±8V 116 pF @ 10 V - - DFN1010D-3 - 360mW (Ta), 5.68W (Tc) -55°C ~ 150°C (TJ)
5LP01M-TL-H

5LP01M-TL-H

MOSFET P-CH 50V 70MA 3MCP

onsemi

4,624 -
5LP01M-TL-H

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V Surface Mount - 1.4 nC @ 10 V 50 V ±10V 7.4 pF @ 10 V - - MCP - 150mW (Ta) 150°C (TJ)
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