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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFIZ24E MOSFET N-CH 60V 14A TO220AB FP Infineon Technologies	4,266	-	询价单	数据表	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	71mOhm @ 7.8A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	60 V	±20V	370 pF @ 25 V	-	-	PG-TO220-FP	-	29W (Tc)	-55°C ~ 175°C (TJ)
IPTC012N06NM5ATMA1 TRENCH 40<-<100V Infineon Technologies	1,658	-	询价单	数据表	OptiMOS™ 5	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	41A (Ta), 311A (Tc)	6V, 10V	1.2mOhm @ 100A, 10V	Surface Mount	3.3V @ 143µA	133 nC @ 10 V	60 V	±20V	10000 pF @ 30 V	-	-	PG-HDSOP-16-U01	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)
SIHH186N60EF-T1GE3 MOSFET N-CH 600V 16A PPAK 8 X 8 Vishay Siliconix	4,665	-	询价单	数据表	EF	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	193mOhm @ 9.5A, 10V	Surface Mount	5V @ 250µA	32 nC @ 10 V	600 V	±30V	1081 pF @ 100 V	-	-	PowerPAK® 8 x 8	-	114W (Tc)	-55°C ~ 150°C (TJ)
AONS850A70 N Alpha & Omega Semiconductor Inc.	5,655	-	询价单	数据表	aMOS5™	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta), 7.6A (Tc)	10V	850mOhm @ 1.4A, 10V	Surface Mount	4.1V @ 250µA	11.5 nC @ 10 V	700 V	±20V	675 pF @ 100 V	-	-	8-DFN-EP (5x6)	-	4.1W (Ta), 113W (Tc)	-55°C ~ 150°C (TJ)
SIHA100N60E-GE3 MOSFET N-CH 600V 30A TO220 Vishay Siliconix	905	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	100mOhm @ 13A, 10V	Through Hole	5V @ 250µA	50 nC @ 10 V	600 V	±30V	1851 pF @ 100 V	-	-	TO-220 Full Pack	-	35W (Tc)	-55°C ~ 150°C (TJ)
STP50NE08 MOSFET N-CH 80V 50A TO220AB STMicroelectronics	5,476	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	24mOhm @ 25A, 10V	Through Hole	4V @ 250µA	110 nC @ 10 V	80 V	±20V	5100 pF @ 25 V	-	-	TO-220	-	150W (Tc)	175°C (TJ)
IMT40R045M2HXTMA1 SIC-MOS Infineon Technologies	2,000	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	6.8A (Ta), 43A (Tc)	15V, 18V	56.2mOhm @ 8.9A, 18V	Surface Mount	5.6V @ 3.2mA	21 nC @ 18 V	400 V	+23V, -7V	910 pF @ 200 V	-	-	PG-HSOF-8-2	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IRF6614TR1 MOSFET N-CH 40V 12.7A DIRECTFET Infineon Technologies	8,417	-	询价单	数据表	HEXFET®	DirectFET™ Isometric ST	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12.7A (Ta), 55A (Tc)	4.5V, 10V	8.3mOhm @ 12.7A, 10V	Surface Mount	2.25V @ 250µA	29 nC @ 4.5 V	40 V	±20V	2560 pF @ 20 V	-	-	DIRECTFET™ ST	-	2.1W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
STP8N65M5 MOSFET N-CH 650V 7A TO220-3 STMicroelectronics	7,656	-	询价单	数据表	MDmesh™ V	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3.5A, 10V	Through Hole	5V @ 250µA	15 nC @ 10 V	650 V	±25V	690 pF @ 100 V	-	-	TO-220	-	70W (Tc)	150°C (TJ)
STB78NF55-08 MOSFET N-CH 55V 80A D2PAK STMicroelectronics	3,030	-	询价单	数据表	STripFET™ II	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 40A, 10V	Surface Mount	4V @ 250µA	155 nC @ 10 V	55 V	±20V	3740 pF @ 25 V	-	-	TO-263 (D2PAK)	-	300W (Tc)	-55°C ~ 175°C (TJ)
PJP60R290E_T0_00001 600V N-CHANNEL SUPER JUNCTION MO Panjit International Inc.	6,181	-	询价单	数据表	-	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta), 15A (Tc)	10V	290mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	40 nC @ 10 V	600 V	±20V	1013 pF @ 25 V	-	-	TO-220AB	-	184W (Tc)	-55°C ~ 150°C (TJ)
AOT5N100 MOSFET N-CH 1000V 4A TO220 Alpha & Omega Semiconductor Inc.	3,819	-	询价单	数据表	-	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	4.2Ohm @ 2.5A, 10V	Through Hole	4.5V @ 250µA	23 nC @ 10 V	1000 V	±30V	1150 pF @ 25 V	-	-	TO-220	-	195W (Tc)	-55°C ~ 150°C (TJ)
PJF9NA90_T0_00001 900V N-CHANNEL MOSFET Panjit International Inc.	6,550	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	1.4Ohm @ 4.5A, 10V	Through Hole	4V @ 250µA	31 nC @ 10 V	900 V	±30V	1634 pF @ 25 V	-	-	ITO-220AB	-	68W (Tc)	-55°C ~ 150°C (TJ)
PSMN013-100PS,127 MOSFET N-CH 100V 68A TO220AB Nexperia USA Inc.	3,294	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	68A (Tc)	10V	13.9mOhm @ 15A, 10V	Through Hole	4V @ 1mA	59 nC @ 10 V	100 V	±20V	3195 pF @ 50 V	-	-	TO-220AB	-	170W (Tc)	-55°C ~ 175°C (TJ)
IRL5602L MOSFET P-CH 20V 24A TO262 Infineon Technologies	2,819	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	24A (Tc)	2.5V, 4.5V	42mOhm @ 12A, 4.5V	Through Hole	1V @ 250µA	44 nC @ 4.5 V	20 V	±8V	1460 pF @ 15 V	-	-	TO-262	-	-	-
IRLR3103TRL MOSFET N-CH 30V 55A DPAK Infineon Technologies	2,214	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	19mOhm @ 33A, 10V	Surface Mount	1V @ 250µA	50 nC @ 4.5 V	30 V	±16V	1600 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)
IRLR3103TRR MOSFET N-CH 30V 55A DPAK Infineon Technologies	8,612	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	19mOhm @ 33A, 10V	Surface Mount	1V @ 250µA	50 nC @ 4.5 V	30 V	±16V	1600 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)
IRFR2905ZTRL MOSFET N-CH 55V 42A DPAK Infineon Technologies	2,420	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	14.5mOhm @ 36A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	55 V	±20V	1380 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRFR2905ZTRR MOSFET N-CH 55V 42A DPAK Infineon Technologies	8,265	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	14.5mOhm @ 36A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	55 V	±20V	1380 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
FQA7N60 MOSFET N-CH 600V 7.7A TO3P onsemi	8,064	-	询价单	数据表	QFET®	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Tc)	10V	1Ohm @ 3.9A, 10V	Through Hole	5V @ 250µA	38 nC @ 10 V	600 V	±30V	1430 pF @ 25 V	-	-	TO-3P	-	152W (Tc)	-55°C ~ 150°C (TJ)

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