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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
PJD40N06A-AU_L2_000A1 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,375	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	17mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	13.5 nC @ 4.5 V	60 V	±20V	1574 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	71W (Tc)	-55°C ~ 175°C (TJ)
IPB45P03P4L11ATMA2 MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies	5,794	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	10.8mOhm @ 45A, 10V	Surface Mount	2V @ 85µA	55 nC @ 10 V	30 V	+5V, -16V	3770 pF @ 25 V	AEC-Q101	-	PG-TO263-3-2	Automotive	58W (Tc)	-55°C ~ 175°C (TJ)
IRF4905SPBF MOSFET P-CH 55V 42A D2PAK Infineon Technologies	7,843	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	20mOhm @ 42A, 10V	Surface Mount	4V @ 250µA	180 nC @ 10 V	55 V	±20V	3500 pF @ 25 V	-	-	D2PAK	-	170W (Tc)	-55°C ~ 150°C (TJ)
HUFA75639P3 MOSFET N-CH 100V 56A TO220-3 onsemi	3,832	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	25mOhm @ 56A, 10V	Through Hole	4V @ 250µA	130 nC @ 20 V	100 V	±20V	2000 pF @ 25 V	-	-	TO-220-3	-	200W (Tc)	-55°C ~ 175°C (TJ)
IRF9Z24STRLPBF MOSFET P-CH 60V 11A D2PAK Vishay Siliconix	9,635	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	280mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
IRF9Z24STRRPBF MOSFET P-CH 60V 11A D2PAK Vishay Siliconix	2,677	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	280mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
NVMFS4C01NWFT1G MOSFET N-CH 30V 49A/319A 5DFN onsemi	1,500	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	49A (Ta), 319A (Tc)	4.5V, 10V	0.9mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	139 nC @ 10 V	30 V	±20V	10144 pF @ 15 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.84W (Ta), 161W (Tc)	-55°C ~ 175°C (TJ)
CDMSJ22029-650 SL SUPER JUNCTION MOSFETS Central Semiconductor Corp	497	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	130mOhm @ 10.8A, 10V	Through Hole	4V @ 250µA	51 nC @ 10 V	650 V	30V	1920 pF @ 400 V	-	-	TO-220FP	-	33W (Tc)	-55°C ~ 150°C (TJ)
IMT65R260M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,870	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	-	SiCFET (Silicon Carbide)	-	18V	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-2	-	-	-
R6020YNX3C16 NCH 600V 20A, TO-220AB, POWER MO Rohm Semiconductor	973	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V, 12V	185mOhm @ 6A, 12V	Through Hole	6V @ 1.65mA	28 nC @ 10 V	600 V	±30V	1200 pF @ 100 V	-	-	TO-220AB	-	182W (Tc)	150°C (TJ)
IPT65R099CFD7XTMA1 MOSFET N-CH 650V 8HSOF Infineon Technologies	1,995	-	询价单	数据表	CoolMOS™ CFD7	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	-	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-2	-	-	-
SIRS4400DP-T1-RE3 N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix	5,998	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	77A (Ta), 440A (Tc)	4.5V, 10V	0.69mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	295 nC @ 10 V	40 V	±20V	13730 pF @ 20 V	-	-	PowerPAK® SO-8	-	7.4W (Ta), 240W (Tc)	-55°C ~ 150°C (TJ)
KFK9B0463ZL SINGLE NCH MOSFET 40V, 7.5A, 1MO Nuvoton Technology Corporation	6,481	-	询价单	数据表	-	9-ULGA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Ta)	4.5V, 10V	15mOhm @ 2A, 10V	Surface Mount	3V @ 990µA	70 nC @ 10 V	40 V	-	5000 pF @ 20 V	-	-	9-LGA (3.05x3.05)	-	860mW (Ta)	-55°C ~ 150°C (TJ)
ISC046N13NM6ATMA1 TRENCH >=100V Infineon Technologies	3,656	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP080N06N G MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	6,374	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 80A, 10V	Through Hole	4V @ 150µA	93 nC @ 10 V	60 V	±20V	3500 pF @ 30 V	-	-	PG-TO220-3-1	-	214W (Tc)	-55°C ~ 175°C (TJ)
TSM60NE110CIT C0G 600V, 17A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation	2,000	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V, 12V	100mOhm @ 5.6A, 12V	Through Hole	6V @ 2.5mA	55 nC @ 10 V	600 V	±30V	2330 pF @ 300 V	-	-	ITO-220TL	-	73W (Tc)	-55°C ~ 150°C (TJ)
S2M0160120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	285	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	20V	196mOhm @ 10A, 20V	Through Hole	4V @ 2.5mA	26.5 nC @ 20 V	1200 V	+20V, -5V	513 pF @ 1000 V	-	-	TO-247AD	-	130W (Tc)	-55°C ~ 175°C (TJ)
IQD020N10NM5ATMA1 TRENCH >=100V Infineon Technologies	4,985	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 276A (Tc)	6V, 10V	2.05mOhm @ 50A, 10V	Surface Mount	3.8V @ 159µA	134 nC @ 10 V	100 V	±20V	9500 pF @ 50 V	-	-	PG-TSON-8-9	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
IQD016N08NM5ATMA1 TRENCH 40<-<100V Infineon Technologies	4,978	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	31A (Ta), 323A (Tc)	6V, 10V	1.57mOhm @ 50A, 10V	Surface Mount	3.8V @ 159µA	133 nC @ 10 V	80 V	±20V	9200 pF @ 40 V	-	-	PG-TSON-8-9	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
SIHB085N60EF-GE3 E SERIES POWER MOSFET WITH FAST Vishay Siliconix	2,000	-	询价单	数据表	EF	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	10V	84mOhm @ 17A, 10V	Surface Mount	5V @ 250µA	63 nC @ 10 V	600 V	±30V	2733 pF @ 100 V	-	-	TO-263 (D2PAK)	-	184W (Tc)	-55°C ~ 150°C (TJ)

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