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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPB65R150CFDAATMA1

IPB65R150CFDAATMA1

MOSFET N-CH 650V 22.4A D2PAK

Infineon Technologies

1,192 -
IPB65R150CFDAATMA1

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V Surface Mount 4.5V @ 900µA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V AEC-Q101 - PG-TO263-3 Automotive 195.3W (Tc) -40°C ~ 150°C (TJ)
IPW60R120C7XKSA1

IPW60R120C7XKSA1

MOSFET N-CH 600V 19A TO247-3

Infineon Technologies

210 -
IPW60R120C7XKSA1

数据表

CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 120mOhm @ 7.8A, 10V Through Hole 4V @ 390µA 34 nC @ 10 V 600 V ±20V 1500 pF @ 400 V - - PG-TO247-3 - 92W (Tc) -55°C ~ 150°C (TJ)
FCPF190N65FL1-F154

FCPF190N65FL1-F154

MOSFET N-CH 650V 20.6A TO220F-3

onsemi

845 -
FCPF190N65FL1-F154

数据表

FRFET®, SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20.6A (Tc) - 190mOhm @ 10A, 10V Through Hole 5V @ 2mA 78 nC @ 10 V 650 V ±20V 3055 pF @ 100 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
IPDQ60R075CFD7XTMA1

IPDQ60R075CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

750 -
IPDQ60R075CFD7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) - - - Surface Mount - - 600 V - - - - PG-HDSOP-22-1 - - -
MCACLS330N04YAHE3-TP

MCACLS330N04YAHE3-TP

MOSFET N-CH 40 330A DFN5060-DSC

Micro Commercial Co

10,000 -
MCACLS330N04YAHE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 330A (Tc) 6V, 10V 1.1mOhm @ 75A, 10V Surface Mount 4V @ 250µA 115.9 nC @ 10 V 40 V ±20V 7349 pF @ 25 V AEC-Q101 - DFN5060-DSC Automotive 263W (Tj) -55°C ~ 175°C (TJ)
IGLR60R340D1XUMA1

IGLR60R340D1XUMA1

GAN HV

Infineon Technologies

4,842 -
IGLR60R340D1XUMA1

数据表

CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Last Time Buy N-Channel GaNFET (Gallium Nitride) 8.2A (Tc) - - Surface Mount 1.6V @ 530µA - 600 V -10V 87.7 pF @ 400 V - - PG-TSON-8-7 - 41.6W (Tc) -40°C ~ 150°C (TJ)
NTMFS7D5N15MC

NTMFS7D5N15MC

PTNG 150V 7.4MOHM, POWERCLIP56

onsemi

2,855 -
NTMFS7D5N15MC

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 8V, 10V 7.9mOhm @ 54A, 10V Surface Mount 4.5V @ 295µA 46 nC @ 10 V 150 V ±20V 3835 pF @ 75 V - - 8-PQFN (5x6) - 3.3W (Ta) -55°C ~ 175°C (TJ)
IPB0401NM5SATMA1

IPB0401NM5SATMA1

TRENCH >=100V

Infineon Technologies

990 -
IPB0401NM5SATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIHG155N60EF-GE3

SIHG155N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

925 -
SIHG155N60EF-GE3

数据表

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 149mOhm @ 2A, 10V Through Hole 5V @ 250µA 38 nC @ 10 V 600 V ±20V 1465 pF @ 100 V - - TO-247AC - 179W (Tc) -55°C ~ 150°C (TJ)
WI61195TR

WI61195TR

POWER GAN IC 8X8 PDFN

Wise-Integration

2,495 -
WI61195TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRF744PBF

IRF744PBF

MOSFET N-CH 450V 8.8A TO220AB

Vishay Siliconix

2,429 -
IRF744PBF

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.8A (Tc) 10V 630mOhm @ 5.3A, 10V Through Hole 4V @ 250µA 80 nC @ 10 V 450 V ±20V 1400 pF @ 25 V - - TO-220AB - 125W (Tc) -55°C ~ 150°C (TJ)
IQD009N06NM5SCATMA1

IQD009N06NM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

5,000 -
IQD009N06NM5SCATMA1

数据表

OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V Surface Mount 3.3V @ 163µA 150 nC @ 10 V 60 V ±20V 12000 pF @ 30 V - - PG-WHSON-8-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IRF7703

IRF7703

MOSFET P-CH 40V 6A 8TSSOP

Infineon Technologies

7,024 -
IRF7703

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V Surface Mount 3V @ 250µA 62 nC @ 4.5 V 40 V ±20V 5220 pF @ 25 V - - 8-TSSOP - 1.5W (Ta) -55°C ~ 150°C (TJ)
DMTH4M90LPSW-13

DMTH4M90LPSW-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

9,834 -
DMTH4M90LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 356A (Tc) 4.5V, 10V 0.9mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 111 nC @ 10 V 40 V ±20V 9308 pF @ 20 V - - PowerDI5060-8 (Type UX) - 4.2W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
DMTH4M90SPSW-13

DMTH4M90SPSW-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,099 -
DMTH4M90SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 278A (Tc) 10V 0.9mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 115 nC @ 10 V 40 V ±20V 9434 pF @ 20 V - - PowerDI5060-8 (Type UX) - 2.6W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
PSMN028N10NS2_R2_00201

PSMN028N10NS2_R2_00201

100V/ 2.8M / TOLL FOR INDUSTRAIL

Panjit International Inc.

1,980 -
PSMN028N10NS2_R2_00201

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A 4.5V, 10V - Surface Mount - 65 nC @ 10 V 100 V ±20V - - - TOLL - - -
NVMFS5C406NT1G

NVMFS5C406NT1G

MOSFET N-CH 40V 52A/353A 5DFN

onsemi

1,560 -
NVMFS5C406NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 52A (Ta), 353A (Tc) 10V 0.8mOhm @ 50A, 10V Surface Mount 4V @ 280µA 110 nC @ 10 V 40 V ±20V 7288 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ)
CCSPG1060N TR PBFREE

CCSPG1060N TR PBFREE

100V, 60A, N-CHANNEL CHIP SCALE

Central Semiconductor Corp

1,442 -
CCSPG1060N TR PBFREE

数据表

* 8-XFLGA, CSP Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 60A (Tc) 5V 5.5mOhm @ 25A, 5V Surface Mount 2.5V @ 9mA 9.2 nC @ 5 V 100 V +6V, -4V 1000 pF @ 50 V - - 8-CSP (3.5x2.13) - 300W (Tc) -40°C ~ 150°C (TJ)
IRLU3636PBF

IRLU3636PBF

MOSFET N-CH 60V 50A IPAK

Infineon Technologies

2,992 -
IRLU3636PBF

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V Through Hole 2.5V @ 100µA 49 nC @ 4.5 V 60 V ±16V 3779 pF @ 50 V - - IPAK - 143W (Tc) -55°C ~ 175°C (TJ)
HUFA76439S3ST

HUFA76439S3ST

MOSFET N-CH 60V 75A D2PAK

onsemi

6,664 -
HUFA76439S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V Surface Mount 3V @ 250µA 84 nC @ 10 V 60 V ±16V 2745 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
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