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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA75339S3ST

HUFA75339S3ST

MOSFET N-CH 55V 75A D2PAK

onsemi

6,344 -
HUFA75339S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 12mOhm @ 75A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 55 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
RBA300N10EHPF-5UA02#GB0

RBA300N10EHPF-5UA02#GB0

100V-300A-N-CHANNEL MOSFET FOR H

Renesas Electronics Corporation

1,500 -
RBA300N10EHPF-5UA02#GB0

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IQD063N15NM5ATMA1

IQD063N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

4,872 -
IQD063N15NM5ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.1A (Ta), 148A (Tc) 8V, 10V 6.32mOhm @ 50A, 10V Surface Mount 4.6V @ 159µA 60 nC @ 10 V 150 V ±20V 4700 pF @ 75 V - - PG-TSON-8-9 - 2.5W (Ta), 278W (Tc) -55°C ~ 150°C (TJ)
G3R350MT12J-TR

G3R350MT12J-TR

1200V 350M TO-263-7 G3R SIC MOSF

GeneSiC Semiconductor

623 -
G3R350MT12J-TR

数据表

G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 10A (Tc) 15V, 18V 395mOhm @ 4A, 18V Surface Mount 2.7V @ 2mA 10 nC @ 15 V 1200 V +22V, -10V 331 pF @ 800 V - - TO-263-7 - 64W (Tc) -55°C ~ 175°C (TJ)
RBA300N10EANS-3UA02#GB0

RBA300N10EANS-3UA02#GB0

100V-300A-N-CHANNEL MOSFET FOR H

Renesas Electronics Corporation

1,955 -
RBA300N10EANS-3UA02#GB0

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RJ1P07CBHTL1

RJ1P07CBHTL1

NCH 100V 70A, TO-263AB, POWER M

Rohm Semiconductor

800 -
RJ1P07CBHTL1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 5.1mOhm @ 70A, 10V Surface Mount 4V @ 1mA 73 nC @ 10 V 100 V ±20V 4650 pF @ 50 V - - TO-263AB - 135W (Tc) 150°C (TJ)
NVMFS6H800NLWFT1G

NVMFS6H800NLWFT1G

MOSFET N-CH 80V 30A/224A 5DFN

onsemi

1,495 -
NVMFS6H800NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 224A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 330µA 112 nC @ 10 V 80 V ±20V 6900 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.9W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C410NWFAFT1G

NVMFS5C410NWFAFT1G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi

1,355 -
NVMFS5C410NWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.5V @ 250µA 86 nC @ 10 V 40 V ±20V 6100 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ)
IPZ60R099C7XKSA1

IPZ60R099C7XKSA1

MOSFET N-CH 600V 22A TO247-4

Infineon Technologies

8,125 -
IPZ60R099C7XKSA1

数据表

CoolMOS™ C7 TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 99mOhm @ 9.7A, 10V Through Hole 4V @ 490µA 42 nC @ 10 V 600 V ±20V 1819 pF @ 400 V - - PG-TO247-4 - 110W (Tc) -55°C ~ 150°C (TJ)
NVB099N65S3

NVB099N65S3

SF3 650V EASY 99MOHM D2PAK AUTO

onsemi

3,141 -
NVB099N65S3

数据表

SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 99mOhm @ 15A, 10V Surface Mount 4.5V @ 740µA 61 nC @ 10 V 650 V ±30V 2480 pF @ 400 V - - TO-263 (D2PAK) - 227W (Tc) -55°C ~ 150°C (TJ)
PJMP125N60FRC_T0_00601

PJMP125N60FRC_T0_00601

600V/ 125M / 30A/ SJ MOSFET WITH

Panjit International Inc.

2,000 -
PJMP125N60FRC_T0_00601

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies

426 -
IPW65R150CFDAFKSA1

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V Through Hole 4.5V @ 900µA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V AEC-Q101 - PG-TO247-3 Automotive 195.3W (Tc) -40°C ~ 150°C (TJ)
SIHA25N60EFL-GE3

SIHA25N60EFL-GE3

N-CHANNEL 600V

Vishay Siliconix

987 -
SIHA25N60EFL-GE3

数据表

E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 146mOhm @ 12.5A, 10V Through Hole 5V @ 250µA 75 nC @ 10 V 600 V ±30V 2274 pF @ 100 V - - TO-220 Full Pack - 39W (Tc) -55°C ~ 150°C (TJ)
STP16NS25FP

STP16NS25FP

MOSFET N-CH 250V 16A TO220FP

STMicroelectronics

9,730 -
STP16NS25FP

数据表

MESH OVERLAY™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 280mOhm @ 8A, 10V Through Hole 4V @ 250µA 83 nC @ 10 V 250 V ±20V 1270 pF @ 25 V - - TO-220FP - 40W (Tc) -65°C ~ 150°C (TJ)
SIHP25N60EFL-BE3

SIHP25N60EFL-BE3

N-CHANNEL 600V

Vishay Siliconix

897 -
SIHP25N60EFL-BE3

数据表

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 146mOhm @ 12.5A, 10V Through Hole 5V @ 250µA 75 nC @ 10 V 600 V ±30V 2274 pF @ 100 V - - TO-220AB - 250W (Tc) -55°C ~ 150°C (TJ)
STP8NM50FP

STP8NM50FP

MOSFET N-CH 550V 8A TO220FP

STMicroelectronics

3,617 -
STP8NM50FP

数据表

MDmesh™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 2.5A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 550 V ±30V 415 pF @ 25 V - - TO-220FP - 25W (Tc) -65°C ~ 150°C (TJ)
SIHP125N60EF-GE3

SIHP125N60EF-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix

976 -
SIHP125N60EF-GE3

数据表

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 125mOhm @ 12A, 10V Through Hole 5V @ 250µA 47 nC @ 10 V 600 V ±30V 1533 pF @ 100 V - - TO-220AB - 179W (Tc) -55°C ~ 150°C (TJ)
STP8NS25

STP8NS25

MOSFET N-CH 250V 8A TO220AB

STMicroelectronics

2,894 -
STP8NS25

数据表

MESH OVERLAY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 450mOhm @ 4A, 10V Through Hole 4V @ 250µA 51.8 nC @ 10 V 250 V ±20V 770 pF @ 25 V - - TO-220 - 80W (Tc) 150°C (TJ)
AUIRF2804STRL7P

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

3,076 -
AUIRF2804STRL7P

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.6mOhm @ 160A, 10V Surface Mount 4V @ 250µA 260 nC @ 10 V 40 V ±20V 6930 pF @ 25 V - - D2PAK (7-Lead) - 330W (Tc) -55°C ~ 175°C (TJ)
IRF6610TR1PBF

IRF6610TR1PBF

MOSFET N-CH 20V 15A DIRECTFET

Infineon Technologies

9,623 -
IRF6610TR1PBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 66A (Tc) 4.5V, 10V 6.8mOhm @ 15A, 10V Surface Mount 2.55V @ 250µA 17 nC @ 4.5 V 20 V ±20V 1520 pF @ 10 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
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