富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDD5810-F085

FDD5810-F085

MOSFET N-CH 60V 7.4A/37A DPAK

onsemi

6,506 -
FDD5810-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V Surface Mount 2V @ 250µA 34 nC @ 10 V 60 V ±20V 1890 pF @ 25 V AEC-Q101 - TO-252AA Automotive 72W (Tc) -55°C ~ 175°C (TJ)
MCTL295N06Y-TP

MCTL295N06Y-TP

N-CHANNEL MOSFET, TOLL-8L

Micro Commercial Co

3,895 -
MCTL295N06Y-TP

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 295A (Tc) 6V, 10V 2mOhm @ 20A, 10V Surface Mount 4V @ 250µA 108 nC @ 10 V 60 V ±20V 8350 pF @ 30 V - - TOLL-8L - 313W (Tj) -55°C ~ 150°C (TJ)
APT4F120S

APT4F120S

MOSFET N-CH 1200V 4A D3PAK

Microchip Technology

128 -
APT4F120S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 4.2Ohm @ 2A, 10V Surface Mount 5V @ 500µA 43 nC @ 10 V 1200 V ±30V 1385 pF @ 25 V - - D3PAK - 175W (Tc) -
IPTG018N08NM5ATMA1

IPTG018N08NM5ATMA1

TRENCH 40<-<100V PG-HSOG-8

Infineon Technologies

1,784 -
IPTG018N08NM5ATMA1

数据表

OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32A (Ta), 253A (Tc) 6V, 10V 1.8mOhm @ 150A, 10V Surface Mount 3.8V @ 159µA 127 nC @ 10 V 80 V ±20V 9200 pF @ 40 V - - PG-HSOG-8-1 - 3.8W (Ta), 231W (Tc) -55°C ~ 175°C (TJ)
RX3R05BBHC16

RX3R05BBHC16

NCH 150V 50A, TO-220AB, POWER MO

Rohm Semiconductor

500 -
RX3R05BBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V Through Hole 4V @ 1mA 37 nC @ 10 V 150 V ±20V 2150 pF @ 75 V - - TO-220AB - 89W (Tc) 150°C (TJ)
MCTK105N60FH-TP

MCTK105N60FH-TP

N-CHANNEL MOSFET,TOLL-8L-KS

Micro Commercial Co

4,000 -
MCTK105N60FH-TP

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 10V 105mOhm @ 15.3A, 10V Surface Mount 5V @ 2.1mA 57 nC @ 10 V 600 V ±30V 2240 pF @ 100 V - - TOLL-8L-KS - 107W (Tc) -55°C ~ 150°C (TJ)
R6061YNXC7G

R6061YNXC7G

NCH 600V 26A, TO-220FM, POWER MO

Rohm Semiconductor

970 -
R6061YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V, 12V 60mOhm @ 13A, 12V Through Hole 6V @ 3.5mA 76 nC @ 10 V 600 V ±30V 3700 pF @ 100 V - - TO-220FM - 100W (Tc) 150°C (TJ)
ISC035N10NM5LF2ATMA1

ISC035N10NM5LF2ATMA1

ISC035N10NM5LF2ATMA1 MOSFET

Infineon Technologies

4,675 -
ISC035N10NM5LF2ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 164A (Tc) 10V 3.5mOhm @ 50A, 10V Surface Mount 3.9V @ 115µA 88 nC @ 10 V 100 V ±20V 7200 pF @ 50 V - - PG-TDSON-8 FL - 3W (Ta), 217W (Tc) -55°C ~ 175°C (TJ)
NTMTS0D7N04CLTXG

NTMTS0D7N04CLTXG

MOSFET N-CH 40V 67A/433A 8DFNW

onsemi

3,000 -
NTMTS0D7N04CLTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 67A (Ta), 433A (Tc) 4.5V, 10V 0.63mOhm @ 50A, 10V Surface Mount 2.5V @ 250µA 205 nC @ 10 V 40 V ±20V 12238 pF @ 25 V - - 8-DFNW (8.3x8.4) - 4.9W (Ta), 205W (Tc) -55°C ~ 175°C (TJ)
IPA65R125C7XKSA1

IPA65R125C7XKSA1

MOSFET N-CH 650V 10A TO220-FP

Infineon Technologies

322 -
IPA65R125C7XKSA1

数据表

CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 125mOhm @ 8.9A, 10V Through Hole 4V @ 440µA 35 nC @ 10 V 650 V ±20V 1670 pF @ 400 V - - PG-TO220-FP - 32W (Tc) -55°C ~ 150°C (TJ)
MSC360SMA120SCT/R

MSC360SMA120SCT/R

MOSFET SIC 1200 V 360 MOHM PSMT

Microchip Technology

1,300 -
MSC360SMA120SCT/R

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 11A (Tc) 20V 450mOhm @ 5A, 20V Surface Mount 3.14V @ 250µA 21 nC @ 20 V 1200 V +23V, -10V 255 pF @ 1000 V - - TO-268 - 71W (Tc) -55°C ~ 175°C (TJ)
IPB260N06N3GATMA1

IPB260N06N3GATMA1

MOSFET N-CH 60V 27A D2PAK

Infineon Technologies

5,096 -
IPB260N06N3GATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 25.7mOhm @ 27A, 10V Surface Mount 4V @ 11µA 15 nC @ 10 V 60 V ±20V 1200 pF @ 30 V - - PG-TO263-3 - 36W (Tc) -55°C ~ 175°C (TJ)
IRFH3702TRPBF

IRFH3702TRPBF

MOSFET N-CH 30V 16A/42A 8PQFN

Infineon Technologies

3,963 -
IRFH3702TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 42A (Tc) 4.5V, 10V 7.1mOhm @ 16A, 10V Surface Mount 2.35V @ 25µA 14 nC @ 4.5 V 30 V ±20V 1510 pF @ 15 V - - 8-PQFN (3x3) - 2.8W (Ta) -55°C ~ 150°C (TJ)
ATP106-TL-H

ATP106-TL-H

MOSFET P-CH 40V 30A ATPAK

onsemi

2,526 -
ATP106-TL-H

数据表

- ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 25mOhm @ 15A, 10V Surface Mount - 29 nC @ 10 V 40 V ±20V 1380 pF @ 20 V - - ATPAK - 40W (Tc) 150°C (TJ)
AOD4180

AOD4180

MOSFET N-CH 80V 10A/54A TO252

Alpha & Omega Semiconductor Inc.

6,743 -
AOD4180

数据表

SDMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 54A (Tc) 7V, 10V 14mOhm @ 20A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 80 V ±25V 2410 pF @ 40 V - - TO-252 (DPAK) - 3.1W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
DMG7702SFG-7

DMG7702SFG-7

MOSFET N-CH 30V 12A POWERDI3333

Diodes Incorporated

8,139 -
DMG7702SFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 10mOhm @ 13.5A, 10V Surface Mount 2.5V @ 250µA 31.6 nC @ 10 V 30 V ±20V 4310 pF @ 15 V - Schottky Diode (Body) POWERDI3333-8 - 890mW (Ta) -55°C ~ 150°C (TJ)
BUK7Y29-40EX

BUK7Y29-40EX

MOSFET N-CH 40V 26A LFPAK56

Nexperia USA Inc.

2,464 -
BUK7Y29-40EX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 29mOhm @ 5A, 10V Surface Mount 4V @ 1mA 7.9 nC @ 10 V 40 V ±20V 492 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 37W (Tc) -55°C ~ 175°C (TJ)
SIRA16DP-T1-GE3

SIRA16DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix

9,903 -
SIRA16DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6.8mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA 47 nC @ 10 V 30 V +20V, -16V 2060 pF @ 15 V - - PowerPAK® SO-8 - - -55°C ~ 150°C (TJ)
BSC882N03LSGATMA1

BSC882N03LSGATMA1

MOSFET N-CH 34V 8TDSON

Infineon Technologies

8,125 -
BSC882N03LSGATMA1

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) - 10V 4.2mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 46 nC @ 10 V 34 V ±20V 3700 pF @ 15 V - - PG-TDSON-8-1 - - -55°C ~ 150°C (TJ)
MSC360SMA120SDT/R

MSC360SMA120SDT/R

MOSFET SIC 1200 V 360 MOHM TO-26

Microchip Technology

795 -
MSC360SMA120SDT/R

数据表

mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 12A (Tc) 18V, 20V 450mOhm @ 5A, 20V Surface Mount 5V @ 250µA 21 nC @ 20 V 1200 V +23V, -10V 258 pF @ 1.2 kV - - TO-263-7 - 92W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户