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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPI60R165CPXKSA1

IPI60R165CPXKSA1

HIGH POWER_LEGACY

Infineon Technologies

500 -
IPI60R165CPXKSA1

数据表

CoolMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 165mOhm @ 12A, 10V Through Hole 3.5V @ 790µA 52 nC @ 10 V 600 V ±20V 2000 pF @ 100 V - - PG-TO262-3-1 - 192W (Tc) -55°C ~ 150°C (TJ)
IPZA60R099P7XKSA1

IPZA60R099P7XKSA1

MOSFET N-CH 600V 31A TO247-4

Infineon Technologies

240 -
IPZA60R099P7XKSA1

数据表

CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 99mOhm @ 10.5A, 10V Through Hole 4V @ 530µA 45 nC @ 10 V 600 V ±20V 1952 pF @ 400 V - - PG-TO247-4 - 117W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C612NT1G

NVMFS5C612NT1G

NFET SO8FL 60V 235A 1.5MO

onsemi

1,500 -
NVMFS5C612NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 34A (Ta), 225A (Tc) 10V 1.65mOhm @ 50A, 10V Surface Mount 4V @ 250µA 62 nC @ 10 V 60 V ±20V 4900 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NTPF125N65S3H

NTPF125N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

970 -
NTPF125N65S3H

数据表

SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tj) 10V 125mOhm @ 12A, 10V Through Hole 4V @ 2.1mA 44 nC @ 10 V 650 V ±30V 2200 pF @ 400 V - - TO-220FP - 37W (Tc) -55°C ~ 150°C (TJ)
IPBE65R145CFD7AATMA1

IPBE65R145CFD7AATMA1

AUTOMOTIVE PG-TO263-7

Infineon Technologies

934 -
IPBE65R145CFD7AATMA1

数据表

CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 145mOhm @ 8.5A, 10V Surface Mount 4.5V @ 420µA 36 nC @ 10 V 650 V ±20V 1694 pF @ 400 V - - PG-TO263-7-11 - 98W (Tc) -40°C ~ 150°C (TJ)
IPW65R150CFDFKSA2

IPW65R150CFDFKSA2

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies

192 -
IPW65R150CFDFKSA2

数据表

CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V Through Hole 4.5V @ 900µA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V - - PG-TO247-3-41 - 195.3W (Tc) -55°C ~ 150°C (TJ)
TP65H150G4LSG

TP65H150G4LSG

GAN FET N-CH 650V PQFN

Transphorm

2,674 -
TP65H150G4LSG

数据表

- 3-PowerTDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 13A (Tc) 10V 180mOhm @ 8.5A, 10V Surface Mount 4.8V @ 500µA 8 nC @ 10 V 650 V ±20V 598 pF @ 400 V - - 3-PQFN (8x8) - 52W (Tc) -55°C ~ 150°C (TJ)
IPDQ65R099CFD7AXTMA1

IPDQ65R099CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

460 -
IPDQ65R099CFD7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 99mOhm @ 9.7A, 10V Surface Mount 4.5V @ 480µA 39 nC @ 10 V 650 V ±20V 1942 pF @ 400 V AEC-Q101 - PG-HDSOP-22-1 Automotive 186W (Tc) -40°C ~ 150°C (TJ)
S1M1000170K

S1M1000170K

MOSFET SILICON CARBIDE SIC 1700V

SMC Diode Solutions

300 -
S1M1000170K

数据表

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 5.2A (Tc) 20V 1.3Ohm @ 2A, 20V Through Hole 4V @ 500µA 10 nC @ 20 V 1700 V +25V, -10V 160 pF @ 1000 V - - TO-247-4 - 81W (Tc) -55°C ~ 175°C (TJ)
EPC2307

EPC2307

TRANS GAN 200V .010OHM 7QFN

EPC

2,839 -
EPC2307

数据表

eGaN® 7-PowerWQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 48A (Ta) 5V 10mOhm @ 16A, 5V Surface Mount 2.5V @ 4mA 10.6 nC @ 5 V 200 V +6V, -4V 1401 pF @ 100 V - - 7-QFN (3x5) - - -40°C ~ 150°C (TJ)
NVMFS5C410NLWFAFT1G

NVMFS5C410NLWFAFT1G

MOSFET N-CH 40V 50A/330A 5DFN

onsemi

966 -
NVMFS5C410NLWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 250µA 143 nC @ 10 V 40 V ±20V 8862 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
MCACL330N04YHE3-TP

MCACL330N04YHE3-TP

MOSFET N-CH 40 330A DFN5060-C

Micro Commercial Co

10,000 -
MCACL330N04YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 330A (Tc) 6V, 10V 1mOhm @ 75A, 10V Surface Mount 4V @ 250µA 133 nC @ 10 V 40 V ±20V 8098 pF @ 30 V AEC-Q101 - DFN5060-C Automotive 187.5W (Tj) -55°C ~ 175°C (TJ)
STP14NK50Z

STP14NK50Z

MOSFET N-CH 500V 14A TO220AB

STMicroelectronics

915 -
STP14NK50Z

数据表

SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4.5V @ 100µA 92 nC @ 10 V 500 V ±30V 2000 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 150°C (TJ)
SIHG22N60EF-GE3

SIHG22N60EF-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix

793 -
SIHG22N60EF-GE3

数据表

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 182mOhm @ 11A, 10V Through Hole 4V @ 250µA 96 nC @ 10 V 600 V ±30V 1423 pF @ 100 V - - TO-247AC - 179W (Tc) -55°C ~ 150°C (TJ)
IMWH170R650M1XKSA1

IMWH170R650M1XKSA1

IMWH170R650M1XKSA1

Infineon Technologies

425 -
IMWH170R650M1XKSA1

数据表

CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 7.5A (Tc) 12V, 15V 580mOhm @ 1.5A, 15V Through Hole 5.7V @ 1.7mA 8.1 nC @ 12 V 1700 V 15V, 12V 337 pF @ 1000 V - - PG-TO247-3-U04 - 88W (Tc) -55°C ~ 175°C (TJ)
NVMFS6H800NWFT1G

NVMFS6H800NWFT1G

MOSFET N-CH 80V 28A/203A 5DFN

onsemi

1,500 -
NVMFS6H800NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 203A (Tc) 10V 2.1mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 330µA 85 nC @ 10 V 80 V ±20V 5530 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
PJL9416_R2_00001

PJL9416_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,917 -
PJL9416_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 4.2mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 30 V ±20V 2436 pF @ 15 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
IQD009N06NM5ATMA1

IQD009N06NM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

4,943 -
IQD009N06NM5ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V Surface Mount 3.3V @ 163µA 150 nC @ 10 V 60 V ±20V 12000 pF @ 30 V - - PG-TSON-8-9 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
PJL9425_R2_00001

PJL9425_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,210 -
PJL9425_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 14mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V 2767 pF @ 25 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
IRF9520STRRPBF

IRF9520STRRPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix

6,301 -
IRF9520STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 100 V ±20V 390 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
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