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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP057N08N3GHKSA1 MOSFET N-CH 80V 80A TO220-3 Infineon Technologies	6,874	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	6V, 10V	5.7mOhm @ 80A, 10V	Through Hole	3.5V @ 90µA	69 nC @ 10 V	80 V	±20V	4750 pF @ 40 V	-	-	PG-TO220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IRLU2703 MOSFET N-CH 30V 23A I-PAK Infineon Technologies	5,466	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	4.5V, 10V	45mOhm @ 14A, 10V	Through Hole	1V @ 250µA	15 nC @ 4.5 V	30 V	±16V	450 pF @ 25 V	-	-	IPAK	-	45W (Tc)	-55°C ~ 175°C (TJ)
IRFU3518-701PBF MOSFET N-CH 80V 38A IPAK Infineon Technologies	4,709	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	29mOhm @ 18A, 10V	Through Hole	4V @ 250µA	56 nC @ 10 V	80 V	±20V	1710 pF @ 25 V	-	-	IPAK (TO-251AA)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IPP072N10N3GHKSA1 MOSFET N-CH 100V 80A TO220-3 Infineon Technologies	5,150	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	6V, 10V	7.2mOhm @ 80A, 10V	Through Hole	3.5V @ 90µA	68 nC @ 10 V	100 V	±20V	4910 pF @ 50 V	-	-	PG-TO220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
GT080N10TI N100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor	9,621	-	询价单	数据表	-	TO-220-3		Obsolete	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	Through Hole	2.5V @ 250µA	35 nC @ 10 V	100 V	±20V	2328 pF @ 50 V	-	-	TO-220	-	100W (Tc)	-55°C ~ 150°C (TJ)
IRLBD59N04ETRLP MOSFET N-CH 40V 59A TO263-5 Infineon Technologies	6,656	-	询价单	数据表	HEXFET®	TO-263-6, D2PAK (5 Leads + Tab), TO-263BA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	5V, 10V	18mOhm @ 35A, 10V	Surface Mount	2V @ 250µA	50 nC @ 5 V	40 V	±10V	2190 pF @ 25 V	-	-	TO-263-5	-	130W (Tc)	-55°C ~ 175°C (TJ)
IAUC120N06S5L015ATMA1 MOSFET_)40V 60V) Infineon Technologies	2,417	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	235A (Tj)	4.5V, 10V	1.5mOhm @ 60A, 10V	Surface Mount	2.2V @ 94µA	114 nC @ 10 V	60 V	±20V	8193 pF @ 30 V	-	-	PG-TDSON-8-43	-	167W (Tc)	-55°C ~ 175°C (TJ)
BUK7506-55B,127 MOSFET N-CH 55V 75A TO220AB NXP USA Inc.	6,119	-	询价单	数据表	TrenchMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	6mOhm @ 25A, 10V	Through Hole	4V @ 1mA	64 nC @ 10 V	55 V	±20V	5100 pF @ 25 V	-	-	TO-220AB	-	254W (Tc)	-55°C ~ 175°C (TJ)
BUK753R4-30B,127 MOSFET N-CH 30V 75A TO220AB NXP USA Inc.	5,342	-	询价单	数据表	TrenchMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	3.4mOhm @ 25A, 10V	Through Hole	4V @ 1mA	75 nC @ 10 V	30 V	±20V	4951 pF @ 25 V	-	-	TO-220AB	-	255W (Tc)	-55°C ~ 175°C (TJ)
PSMN6R3-120ESQ MOSFET N-CH 120V 70A I2PAK Nexperia USA Inc.	6,354	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	6.7mOhm @ 25A, 10V	Through Hole	4V @ 250µA	207.1 nC @ 10 V	120 V	±20V	11384 pF @ 60 V	-	-	I2PAK	-	405W (Tc)	-55°C ~ 175°C (TJ)
TK5R0A15Q5,S4X 150V UMOS10-HSD TO-220SIS 5MOHM Toshiba Semiconductor and Storage	380	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Ta), 76A (Tc)	8V, 10V	5mOhm @ 38A, 10V	Through Hole	4.5V @ 2.2mA	96 nC @ 10 V	150 V	±20V	7820 pF @ 75 V	-	-	TO-220SIS	-	53W (Tc)	175°C
SIHG150N60E-GE3 E SERIES POWER MOSFET TO-247AC, Vishay Siliconix	900	-	询价单	数据表	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V	155mOhm @ 10A, 10V	Through Hole	5V @ 250µA	36 nC @ 10 V	600 V	±30V	1514 pF @ 100 V	-	-	TO-247AC	-	179W (Tc)	-55°C ~ 150°C (TJ)
EPC2308 TRANS GAN 150V .006OHM 7QFN EPC	8,791	-	询价单	数据表	eGaN®	7-PowerWQFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	48A (Ta)	5V	6mOhm @ 15A, 5V	Surface Mount	2.5V @ 5mA	13.8 nC @ 5 V	150 V	+6V, -4V	2103 pF @ 75 V	-	-	7-QFN (3x5)	-	-	-40°C ~ 150°C (TJ)
IPB60R105CFD7ATMA1 MOSFET N-CH 600V 21A TO263-3 Infineon Technologies	848	-	询价单	数据表	CoolMOS™ CFD7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	105mOhm @ 9.3A, 10V	Surface Mount	4.5V @ 470µA	42 nC @ 10 V	600 V	±20V	1752 pF @ 400 V	-	-	PG-TO263-3-2	-	106W (Tc)	-55°C ~ 150°C (TJ)
IPB35N10S3L26ATMA2 MOSFET_(75V 120V( Infineon Technologies	5,745	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	26.3mOhm @ 35A, 10V	Surface Mount	2.4V @ 39µA	39 nC @ 10 V	100 V	±20V	2700 pF @ 25 V	AEC-Q101	-	PG-TO263-3-2	Automotive	71W (Tc)	-55°C ~ 175°C (TJ)
FDP150N10A MOSFET N-CH 100V 50A TO220-3 onsemi	7,664	-	询价单	数据表	PowerTrench®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	15mOhm @ 50A, 10V	Through Hole	4V @ 250µA	21 nC @ 10 V	100 V	±20V	1440 pF @ 50 V	-	-	TO-220-3	-	91W (Tc)	-55°C ~ 175°C (TJ)
PSMN0R9-30YLD/2X PSMN0R9-30YLD/SOT1023/4 LEADS Nexperia USA Inc.	3,086	-	询价单	数据表	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (Tc)	4.5V, 10V	0.87mOhm @ 25A, 10V	Surface Mount	2.2V @ 1mA	109 nC @ 10 V	30 V	±20V	7668 pF @ 15 V	-	-	LFPAK56, Power-SO8	-	291W (Tc)	-55°C ~ 150°C (TJ)
IPD30N03S2L10ATMA1 MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	6,440	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	10mOhm @ 30A, 10V	Surface Mount	2V @ 50µA	42 nC @ 10 V	30 V	±20V	1200 pF @ 25 V	-	-	PG-TO252-3-11	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPSA70R1K2P7SAKMA1 MOSFET N-CH 700V 4.5A TO251-3 Infineon Technologies	2	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.2Ohm @ 900mA, 10V	Through Hole	3.5V @ 40µA	4.8 nC @ 400 V	700 V	±16V	174 pF @ 400 V	-	-	PG-TO251-3	-	25W (Tc)	-40°C ~ 150°C (TJ)
IRFR9N20DTRL MOSFET N-CH 200V 9.4A DPAK Infineon Technologies	4,940	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.4A (Tc)	10V	380mOhm @ 5.6A, 10V	Surface Mount	5.5V @ 250µA	27 nC @ 10 V	200 V	±30V	560 pF @ 25 V	-	-	TO-252AA (DPAK)	-	86W (Tc)	-55°C ~ 175°C (TJ)

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