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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUFA75637S3SMOSFET N-CH 100V 44A D2PAK |
3,058 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | Surface Mount | 4V @ 250µA | 108 nC @ 20 V | 100 V | ±20V | 1700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 155W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB80N06S2H5ATMA2MOSFET N-CH 55V 80A TO263-3 |
875 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | Surface Mount | 4V @ 230µA | 155 nC @ 10 V | 55 V | ±20V | 4400 pF @ 25 V | - | - | PG-TO263-3-2 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
HUFA76437S3SMOSFET N-CH 60V 71A D2PAK |
5,465 | - |
|
数据表 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 71A (Tc) | 4.5V, 10V | 14mOhm @ 71A, 10V | Surface Mount | 3V @ 250µA | 71 nC @ 10 V | 60 V | ±16V | 2230 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 155W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB80N04S204ATMA2MOSFET N-CH 40V 80A TO263-3 |
6,388 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 170 nC @ 10 V | 40 V | ±20V | 5300 pF @ 25 V | - | - | PG-TO263-3-2 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IQD016N08NM5CGATMA1OPTIMOS 6 POWER-TRANSISTOR |
4,824 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 133 nC @ 10 V | 80 V | ±20V | 9200 pF @ 40 V | - | - | PG-TTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IRL3202LMOSFET N-CH 20V 48A TO262-3 |
8,151 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | Through Hole | 700mV @ 250µA (Min) | 43 nC @ 4.5 V | 20 V | ±10V | 2000 pF @ 15 V | - | - | TO-262-3 | - | 69W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP12N60MOSFET N-CH 600V 10.5A TO220-3 |
6,361 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | Through Hole | 5V @ 250µA | 54 nC @ 10 V | 600 V | ±30V | 1900 pF @ 25 V | - | - | TO-220-3 | - | 180W (Tc) | -55°C ~ 150°C (TJ) |
|
FQB12N50TM_AM002MOSFET N-CH 500V 12.1A D2PAK |
5,353 | - |
|
数据表 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12.1A (Tc) | 10V | 490mOhm @ 6.05A, 10V | Surface Mount | 5V @ 250µA | 51 nC @ 10 V | 500 V | ±30V | 2020 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.13W (Ta), 179W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI180N10N3GXKSA1MOSFET N-CH 100V 43A TO262-3 |
5,683 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | Through Hole | 3.5V @ 33µA | 25 nC @ 10 V | 100 V | ±20V | 1800 pF @ 50 V | - | - | PG-TO262-3 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP06N60C3HKSA1MOSFET N-CH 650V 6.2A TO220-3 |
2,357 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | Through Hole | 3.9V @ 260µA | 31 nC @ 10 V | 650 V | ±20V | 620 pF @ 25 V | - | - | PG-TO220-3-1 | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
HUF75939P3MOSFET N-CH 200V 22A TO220-3 |
8,737 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 125mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 152 nC @ 20 V | 200 V | ±20V | 2200 pF @ 25 V | - | - | TO-220-3 | - | 180W (Tc) | -55°C ~ 175°C (TJ) |
|
IXFY4N60P3MOSFET N-CH 600V 4A TO252 |
2,615 | - |
|
数据表 |
HiPerFET™, Polar3™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | Surface Mount | 5V @ 250µA | 6.9 nC @ 10 V | 600 V | ±30V | 365 pF @ 25 V | - | - | TO-252AA | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
DMNH6008SPSWQ-13MOSFET BVDSS: 41V~60V POWERDI506 |
8,865 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16.5A (Ta), 88A (Tc) | 10V | 8mOhm @ 20A, 10V | Surface Mount, Wettable Flank | 4V @ 250µA | 40.1 nC @ 10 V | 60 V | ±20V | 2597 pF @ 30 V | AEC-Q101 | - | PowerDI5060-8 (Type UX) | Automotive | 1.6W | -55°C ~ 175°C (TJ) |
|
FQN1N50CTAMOSFET N-CH 500V 380MA TO92-3 |
19 | - |
|
数据表 |
QFET® | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 380mA (Tc) | 10V | 6Ohm @ 190mA, 10V | Through Hole | 4V @ 250µA | 6.4 nC @ 10 V | 500 V | ±30V | 195 pF @ 25 V | - | - | TO-92-3 | - | 890mW (Ta), 2.08W (Tc) | -55°C ~ 150°C (TJ) |
|
STB9NK60ZT4MOSFET N-CH 600V 7A D2PAK |
845 | - |
|
数据表 |
SuperMESH™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | Surface Mount | 4.5V @ 100µA | 53 nC @ 10 V | 600 V | ±30V | 1110 pF @ 25 V | - | - | D2PAK | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
FDD6680ASMOSFET N-CH 30V 55A TO252 |
2,479 | - |
|
数据表 |
PowerTrench®, SyncFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | Surface Mount | 3V @ 1mA | 29 nC @ 10 V | 30 V | ±20V | 1200 pF @ 15 V | - | - | TO-252AA | - | 60W (Ta) | -55°C ~ 155°C (TJ) |
|
STW25N60M2-EPMOSFET N-CHANNEL 600V 18A TO247 |
560 | - |
|
数据表 |
MDmesh™ M2-EP | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | Through Hole | 4.75V @ 250µA | 29 nC @ 10 V | 600 V | ±25V | 1090 pF @ 100 V | - | - | TO-247-3 | - | 150W (Tc) | -55°C ~ 150°C (TJ) |
|
IQD020N10NM5CGATMA1OPTIMOS 6 POWER-TRANSISTOR |
4,942 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 273A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 134 nC @ 10 V | 100 V | ±20V | 9500 pF @ 50 V | - | - | PG-TTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
XP8NA2R2CXTMOSFET N-CH 80V 35A 168A PMPAK |
1,000 | - |
|
数据表 |
XP8NA2R2C | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Ta), 168A (Tc) | 6V, 10V | 2.2mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 179 nC @ 10 V | 80 V | ±20V | 9328 pF @ 60 V | - | - | PMPAK® 5 x 6 | - | 5W (Ta), 113.6W (Tc) | -55°C ~ 150°C (TJ) |
|
TP65H300G4LSGB-TRGANFET N-CH 650V 6.5A QFN8X8 |
2,893 | - |
|
数据表 |
SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 6.5A (Tc) | 6V | 312mOhm @ 6.5A, 6V | Surface Mount | 2.8V @ 500µA | 8.8 nC @ 10 V | 650 V | ±12V | 730 pF @ 400 V | - | - | 8-PQFN (8x8) | - | 21W (Tc) | -55°C ~ 150°C (TJ) |
