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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
HUFA75637S3S

HUFA75637S3S

MOSFET N-CH 100V 44A D2PAK

onsemi

3,058 -
HUFA75637S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Surface Mount 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
IPB80N06S2H5ATMA2

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

875 -
IPB80N06S2H5ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.2mOhm @ 80A, 10V Surface Mount 4V @ 230µA 155 nC @ 10 V 55 V ±20V 4400 pF @ 25 V - - PG-TO263-3-2 - 300W (Tc) -55°C ~ 175°C (TJ)
HUFA76437S3S

HUFA76437S3S

MOSFET N-CH 60V 71A D2PAK

onsemi

5,465 -
HUFA76437S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
IPB80N04S204ATMA2

IPB80N04S204ATMA2

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,388 -
IPB80N04S204ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.4mOhm @ 80A, 10V Surface Mount 4V @ 250µA 170 nC @ 10 V 40 V ±20V 5300 pF @ 25 V - - PG-TO263-3-2 - 300W (Tc) -55°C ~ 175°C (TJ)
IQD016N08NM5CGATMA1

IQD016N08NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,824 -
IQD016N08NM5CGATMA1

数据表

OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V Surface Mount 3.8V @ 159µA 133 nC @ 10 V 80 V ±20V 9200 pF @ 40 V - - PG-TTFN-9-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IRL3202L

IRL3202L

MOSFET N-CH 20V 48A TO262-3

Vishay Siliconix

8,151 -
IRL3202L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V Through Hole 700mV @ 250µA (Min) 43 nC @ 4.5 V 20 V ±10V 2000 pF @ 15 V - - TO-262-3 - 69W (Tc) -55°C ~ 150°C (TJ)
FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

onsemi

6,361 -
FQP12N60

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 150°C (TJ)
FQB12N50TM_AM002

FQB12N50TM_AM002

MOSFET N-CH 500V 12.1A D2PAK

onsemi

5,353 -
FQB12N50TM_AM002

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.1A (Tc) 10V 490mOhm @ 6.05A, 10V Surface Mount 5V @ 250µA 51 nC @ 10 V 500 V ±30V 2020 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 179W (Tc) -55°C ~ 150°C (TJ)
IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

MOSFET N-CH 100V 43A TO262-3

Infineon Technologies

5,683 -
IPI180N10N3GXKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V Through Hole 3.5V @ 33µA 25 nC @ 10 V 100 V ±20V 1800 pF @ 50 V - - PG-TO262-3 - 71W (Tc) -55°C ~ 175°C (TJ)
SPP06N60C3HKSA1

SPP06N60C3HKSA1

MOSFET N-CH 650V 6.2A TO220-3

Infineon Technologies

2,357 -
SPP06N60C3HKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V Through Hole 3.9V @ 260µA 31 nC @ 10 V 650 V ±20V 620 pF @ 25 V - - PG-TO220-3-1 - 74W (Tc) -55°C ~ 150°C (TJ)
HUF75939P3

HUF75939P3

MOSFET N-CH 200V 22A TO220-3

onsemi

8,737 -
HUF75939P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 125mOhm @ 22A, 10V Through Hole 4V @ 250µA 152 nC @ 20 V 200 V ±20V 2200 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
IXFY4N60P3

IXFY4N60P3

MOSFET N-CH 600V 4A TO252

IXYS

2,615 -
IXFY4N60P3

数据表

HiPerFET™, Polar3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 2A, 10V Surface Mount 5V @ 250µA 6.9 nC @ 10 V 600 V ±30V 365 pF @ 25 V - - TO-252AA - 114W (Tc) -55°C ~ 150°C (TJ)
DMNH6008SPSWQ-13

DMNH6008SPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

8,865 -
DMNH6008SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.5A (Ta), 88A (Tc) 10V 8mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 40.1 nC @ 10 V 60 V ±20V 2597 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.6W -55°C ~ 175°C (TJ)
FQN1N50CTA

FQN1N50CTA

MOSFET N-CH 500V 380MA TO92-3

onsemi

19 -
FQN1N50CTA

数据表

QFET® TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 380mA (Tc) 10V 6Ohm @ 190mA, 10V Through Hole 4V @ 250µA 6.4 nC @ 10 V 500 V ±30V 195 pF @ 25 V - - TO-92-3 - 890mW (Ta), 2.08W (Tc) -55°C ~ 150°C (TJ)
STB9NK60ZT4

STB9NK60ZT4

MOSFET N-CH 600V 7A D2PAK

STMicroelectronics

845 -
STB9NK60ZT4

数据表

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 950mOhm @ 3.5A, 10V Surface Mount 4.5V @ 100µA 53 nC @ 10 V 600 V ±30V 1110 pF @ 25 V - - D2PAK - 125W (Tc) -55°C ~ 150°C (TJ)
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

onsemi

2,479 -
FDD6680AS

数据表

PowerTrench®, SyncFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V Surface Mount 3V @ 1mA 29 nC @ 10 V 30 V ±20V 1200 pF @ 15 V - - TO-252AA - 60W (Ta) -55°C ~ 155°C (TJ)
STW25N60M2-EP

STW25N60M2-EP

MOSFET N-CHANNEL 600V 18A TO247

STMicroelectronics

560 -
STW25N60M2-EP

数据表

MDmesh™ M2-EP TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 188mOhm @ 9A, 10V Through Hole 4.75V @ 250µA 29 nC @ 10 V 600 V ±25V 1090 pF @ 100 V - - TO-247-3 - 150W (Tc) -55°C ~ 150°C (TJ)
IQD020N10NM5CGATMA1

IQD020N10NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,942 -
IQD020N10NM5CGATMA1

数据表

OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 273A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V Surface Mount 3.8V @ 159µA 134 nC @ 10 V 100 V ±20V 9500 pF @ 50 V - - PG-TTFN-9-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
XP8NA2R2CXT

XP8NA2R2CXT

MOSFET N-CH 80V 35A 168A PMPAK

YAGEO XSEMI

1,000 -
XP8NA2R2CXT

数据表

XP8NA2R2C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 168A (Tc) 6V, 10V 2.2mOhm @ 20A, 10V Surface Mount 4V @ 250µA 179 nC @ 10 V 80 V ±20V 9328 pF @ 60 V - - PMPAK® 5 x 6 - 5W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ)
TP65H300G4LSGB-TR

TP65H300G4LSGB-TR

GANFET N-CH 650V 6.5A QFN8X8

Transphorm

2,893 -
TP65H300G4LSGB-TR

数据表

SuperGaN® 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 6.5A (Tc) 6V 312mOhm @ 6.5A, 6V Surface Mount 2.8V @ 500µA 8.8 nC @ 10 V 650 V ±12V 730 pF @ 400 V - - 8-PQFN (8x8) - 21W (Tc) -55°C ~ 150°C (TJ)
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