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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK7R2E15Q5,S1X 150V UMOS10-HSD TO-220 7.2MOHM Toshiba Semiconductor and Storage	400	-	询价单	数据表	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	130A (Ta), 84A (Tc)	8V, 10V	7.2mOhm @ 42A, 10V	Through Hole	4.5V @ 1.4mA	66 nC @ 10 V	150 V	±20V	4970 pF @ 75 V	-	-	TO-220	-	230W (Tc)	175°C
IPT65R155CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	2,000	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	-	-	-	-	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-3	-	-	-
MSJP07N80A-BP MOSFET Micro Commercial Co	6,733	-	询价单	数据表	-	TO-220-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	950mOhm @ 4A, 10V	Through Hole	4.5V @ 250µA	14 nC @ 10 V	800 V	±20V	502 pF @ 25 V	-	-	TO-220AB (H)	-	104W (Tj)	-55°C ~ 150°C (TJ)
NVMFWS003N10MCT1G PTNG 100V STD SO8FL HE onsemi	1,420	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23.7A (Ta), 169A (Tc)	10V	3.1mOhm @ 50A, 10V	Surface Mount, Wettable Flank	4V @ 351µA	62 nC @ 10 V	100 V	±20V	4650 pF @ 50 V	AEC-Q101	-	5-DFNW (4.9x5.9) (8-SOFL-WF)	Automotive	3.8W (Ta), 194W (Tc)	-55°C ~ 175°C (TJ)
FQB9N50TM MOSFET N-CH 500V 9A D2PAK onsemi	8,649	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	730mOhm @ 4.5A, 10V	Surface Mount	5V @ 250µA	36 nC @ 10 V	500 V	±30V	1450 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 147W (Tc)	-55°C ~ 150°C (TJ)
SIHB12N60ET1-GE3 MOSFET N-CH 600V 12A TO263 Vishay Siliconix	5,047	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	380mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	600 V	±30V	937 pF @ 100 V	-	-	TO-263 (D2PAK)	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIHB12N60ET5-GE3 MOSFET N-CH 600V 12A TO263 Vishay Siliconix	5,286	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	380mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	600 V	±30V	937 pF @ 100 V	-	-	TO-263 (D2PAK)	-	147W (Tc)	-55°C ~ 150°C (TJ)
SIHF7N60E-GE3 MOSFET N-CHANNEL 600V 7A TO220 Vishay Siliconix	9,293	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	40 nC @ 10 V	600 V	±30V	680 pF @ 100 V	-	-	TO-220 Full Pack	-	31W (Tc)	-55°C ~ 150°C (TJ)
NVMFS5C420NT1G POWER MOSFET, N-CHANNEL, SO8FL, onsemi	1,500	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	43A (Ta), 268A (Tc)	10V	1.1mOhm @ 50A, 10V	Surface Mount	4V @ 200µA	82 nC @ 10 V	40 V	±20V	5340 pF @ 20 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR4615TRL MOSFET N-CH 150V 33A DPAK Infineon Technologies	3,000	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	42mOhm @ 21A, 10V	Surface Mount	5V @ 100µA	26 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	TO-252AA (DPAK)	-	144W (Tc)	-55°C ~ 175°C (TJ)
R6022YNX3C16 NCH 600V 22A, TO-220AB, POWER MO Rohm Semiconductor	995	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Tc)	10V, 12V	165mOhm @ 6.5A, 12V	Through Hole	6V @ 1.8mA	33 nC @ 10 V	600 V	±30V	1400 pF @ 100 V	-	-	TO-220AB	-	205W (Tc)	150°C (TJ)
XP60SL115DR MOSFET N-CH 600V 28A TO262 YAGEO XSEMI	990	-	询价单	数据表	XP60SL115D	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	115mOhm @ 9.6A, 10V	Through Hole	5V @ 250µA	145 nC @ 10 V	600 V	±20V	5120 pF @ 100 V	-	-	TO-262	-	2W (Ta), 178W (Tc)	-55°C ~ 150°C (TJ)
SIHFS9N60A-GE3 MOSFET N-CH 600V 9.2A TO263 Vishay Siliconix	4,606	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	750mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	49 nC @ 10 V	600 V	±30V	1400 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 150°C (TJ)
NTP30N06 MOSFET N-CH 60V 27A TO220AB onsemi	9,150	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Ta)	10V	42mOhm @ 15A, 10V	Through Hole	4V @ 250µA	46 nC @ 10 V	60 V	±20V	1200 pF @ 25 V	-	-	TO-220	-	88.2W (Tc)	-55°C ~ 175°C (TJ)
HUF75329G3 MOSFET N-CH 55V 49A TO247-3 onsemi	5,932	-	询价单	数据表	UltraFET™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	24mOhm @ 49A, 10V	Through Hole	4V @ 250µA	75 nC @ 20 V	55 V	±20V	1060 pF @ 25 V	-	-	TO-247-3	-	128W (Tc)	-55°C ~ 175°C (TJ)
IRFR1205TRL MOSFET N-CH 55V 44A DPAK Infineon Technologies	8,210	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	27mOhm @ 26A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)
IRFR1205TRR MOSFET N-CH 55V 44A DPAK Infineon Technologies	5,254	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	27mOhm @ 26A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)
FQI4N80TU MOSFET N-CH 800V 3.9A I2PAK onsemi	7,640	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	3.6Ohm @ 1.95A, 10V	Through Hole	5V @ 250µA	25 nC @ 10 V	800 V	±30V	880 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)
STD13N50DM2AG POWER TRANSISTORS STMicroelectronics	4,439	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	11A (Tc)	-	-	-	-	-	-	±25V	-	-	-	-	-	-	-
HUFA75337S3S MOSFET N-CH 55V 75A D2PAK onsemi	5,275	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	14mOhm @ 75A, 10V	Surface Mount	4V @ 250µA	109 nC @ 20 V	55 V	±20V	1775 pF @ 25 V	-	-	TO-263 (D2PAK)	-	175W (Tc)	-55°C ~ 175°C (TJ)

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