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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DMTH4001SPS-13 MOSFET N-CH 40V 100A PWRDI Diodes Incorporated	5,319	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	1mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	187 nC @ 10 V	40 V	±20V	14023 pF @ 20 V	-	-	PowerDI5060-8 (Type K)	-	3.09W (Ta), 187.5W (Tc)	-55°C ~ 175°C (TJ)
FQPF11N40T MOSFET N-CH 400V 6.6A TO220F onsemi	3,217	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	10V	480mOhm @ 3.3A, 10V	Through Hole	5V @ 250µA	35 nC @ 10 V	400 V	±30V	1400 pF @ 25 V	-	-	TO-220F-3	-	50W (Tc)	-55°C ~ 150°C (TJ)
NVMFS6B14NT3G MOSFET N-CH 100V 15A 5DFN onsemi	6,128	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	10V	15mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	100 V	±16V	1300 pF @ 50 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
IPB80P04P4L08ATMA1 MOSFET P-CH 40V 80A TO263-3 Infineon Technologies	2,991	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	7.9mOhm @ 80A, 10V	Surface Mount	2.2V @ 120µA	92 nC @ 10 V	40 V	±16V	5430 pF @ 25 V	AEC-Q101	-	PG-TO263-3-2	Automotive	75W (Tc)	-55°C ~ 175°C (TJ)
IRLZ44NLPBF MOSFET N-CH 55V 47A TO262 Infineon Technologies	2,570	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	Through Hole	2V @ 250µA	48 nC @ 5 V	55 V	±16V	1700 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
SIHFS11N50A-GE3 MOSFET N-CH 500V 11A TO263 Vishay Siliconix	9,876	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	520mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	52 nC @ 10 V	500 V	±30V	1423 pF @ 25 V	-	-	TO-263 (D2PAK)	-	170W (Tc)	-55°C ~ 150°C (TJ)
IPB65R190CFDATMA2 MOSFET N-CH 650V 17.5A TO263-3 Infineon Technologies	893	-	询价单	数据表	CoolMOS™ CFD2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17.5A (Tc)	10V	190mOhm @ 7.3A, 10V	Surface Mount	4.5V @ 700µA	68 nC @ 10 V	650 V	±20V	1850 pF @ 100 V	-	-	PG-TO263-3	-	151W (Tc)	-55°C ~ 150°C (TJ)
SIDR570EP-T1-RE3 N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix	5,990	-	询价单	数据表	TrenchFET® Gen V	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta), 90.9A (Tc)	7.5V, 10V	7.9mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	71 nC @ 10 V	150 V	±20V	3740 pF @ 75 V	-	-	PowerPAK® SO-8DC	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
NVMFS5H600NLT1G MOSFET N-CH 60V 35A/250A 5DFN onsemi	1,500	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 250A (Tc)	4.5V, 10V	1.3mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	89 nC @ 10 V	60 V	±20V	6680 pF @ 30 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.3W (Ta), 160W (Tc)	-55°C ~ 175°C (TJ)
IRF740LCPBF-BE3 MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	975	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	-	550mOhm @ 6A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	400 V	±30V	1100 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
IQD009N06NM5CGATMA1 OPTIMOS 6 POWER-TRANSISTOR Infineon Technologies	4,872	-	询价单	数据表	OptiMOS™ 5	9-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	42A (Ta), 445A (Tc)	6V, 10V	0.9mOhm @ 50A, 10V	Surface Mount	3.3V @ 163µA	150 nC @ 10 V	60 V	±20V	12000 pF @ 30 V	-	-	PG-TTFN-9-U02	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)
TK7R4A15Q5,S4X 150V UMOS10-HSD TO-220SIS 7.4MOH Toshiba Semiconductor and Storage	400	-	询价单	数据表	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	8V, 10V	7.4mOhm @ 28.5A, 10V	Through Hole	4.5V @ 1.4mA	66 nC @ 10 V	150 V	±20V	4970 pF @ 75 V	-	-	TO-220SIS	-	46W (Tc)	175°C
IPL60R180P6AUMA1 MOSFET N-CH 600V 22.4A 4VSON Infineon Technologies	4,990	-	询价单	数据表	CoolMOS™ P6	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22.4A (Tc)	10V	180mOhm @ 9A, 10V	Surface Mount	4.5V @ 750µA	44 nC @ 10 V	600 V	±20V	2080 pF @ 100 V	-	-	PG-VSON-4	-	176W (Tc)	-40°C ~ 150°C (TJ)
IPB60R160P6ATMA1 MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies	2,219	-	询价单	数据表	CoolMOS™ P6	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23.8A (Tc)	10V	160mOhm @ 9A, 10V	Surface Mount	4.5V @ 750µA	44 nC @ 10 V	600 V	±20V	2080 pF @ 100 V	-	-	PG-TO263-3	-	176W (Tc)	-55°C ~ 150°C (TJ)
TSM60NE200CIT C0G MOSFET Taiwan Semiconductor Corporation	2,000	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V, 12V	185mOhm @ 4A, 12V	Through Hole	6V @ 1.65mA	30 nC @ 10 V	600 V	±30V	1238 pF @ 300 V	-	-	ITO-220TL	-	63W (Tc)	-55°C ~ 150°C (TJ)
IAUA180N10S5N029AUMA1 MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies	1,926	-	询价单	数据表	OptiMOS™	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tj)	6V, 10V	2.9mOhm @ 90A, 10V	Surface Mount	3.8V @ 130µA	105 nC @ 10 V	100 V	±20V	7673 pF @ 50 V	-	-	PG-HSOF-5-4	-	221W (Tc)	-55°C ~ 175°C (TJ)
TK210V65Z,LQ MOSFET N-CH 650V 15A 5DFN Toshiba Semiconductor and Storage	4,630	-	询价单	数据表	DTMOSVI	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	210mOhm @ 7.5A, 10V	Surface Mount	4V @ 610µA	25 nC @ 10 V	650 V	±30V	1370 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	130W (Tc)	150°C
MCB2D8N04YHQ-TP POWER MOSFET Micro Commercial Co	1,600	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	164A (Tc)	10V	2.8mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	42 nC @ 10 V	40 V	±20V	3540 pF @ 25 V	AEC-Q101	-	D2PAK	Automotive	136W (Tj)	-55°C ~ 175°C (TJ)
RD3R05BBHTL1 NCH 150V 50A, TO-252, POWER MOSF Rohm Semiconductor	2,370	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	6V, 10V	29mOhm @ 25A, 10V	Surface Mount	4V @ 1mA	37 nC @ 10 V	150 V	±20V	2150 pF @ 75 V	-	-	TO-252	-	89W (Tc)	150°C (TJ)
MSJPF07N80A-BP MOSFET Micro Commercial Co	7,672	-	询价单	数据表	-	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	950mOhm @ 4A, 10V	Through Hole	4.5V @ 250µA	14 nC @ 10 V	800 V	±20V	502 pF @ 25 V	-	-	TO-220F	-	78W (Tj)	-55°C ~ 150°C (TJ)

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