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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SPD04P10PGBTMA1

SPD04P10PGBTMA1

MOSFET P-CH 100V 4A TO252-3

Infineon Technologies

3,185 -
SPD04P10PGBTMA1

数据表

SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1Ohm @ 2.8A, 10V Surface Mount 4V @ 380µA 12 nC @ 10 V 100 V ±20V 319 pF @ 25 V - - PG-TO252-3 - 38W (Tc) -55°C ~ 175°C (TJ)
AOD4182

AOD4182

MOSFET N-CH 80V 8.5A/53A TO252

Alpha & Omega Semiconductor Inc.

3,903 -
AOD4182

数据表

SDMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.5A (Ta), 53A (Tc) 7V, 10V 15.5mOhm @ 20A, 10V Surface Mount 4.2V @ 250µA 34 nC @ 10 V 80 V ±25V 2005 pF @ 40 V - - TO-252 (DPAK) - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
SI5458DU-T1-GE3

SI5458DU-T1-GE3

MOSFET N-CH 30V 6A CHIPFET

Vishay Siliconix

7,959 -
SI5458DU-T1-GE3

数据表

TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 4.5V, 10V 41mOhm @ 7.1A, 10V Surface Mount 3V @ 250µA 9 nC @ 10 V 30 V ±20V 325 pF @ 15 V - - PowerPAK® ChipFET™ Single - 3.5W (Ta), 10.4W (Tc) -55°C ~ 150°C (TJ)
IRL6342TRPBF

IRL6342TRPBF

MOSFET N-CH 30V 9.9A 8SO

Infineon Technologies

2,087 -
IRL6342TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.9A (Ta) 2.5V, 4.5V 14.6mOhm @ 9.9A, 4.5V Surface Mount 1.1V @ 10µA 11 nC @ 4.5 V 30 V ±12V 1025 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
STU8N65M5

STU8N65M5

MOSFET N-CH 650V 7A IPAK

STMicroelectronics

8,560 -
STU8N65M5

数据表

MDmesh™ V TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 650 V ±25V 690 pF @ 100 V - - TO-251 (IPAK) - 70W (Tc) 150°C (TJ)
STS26N3LLH6

STS26N3LLH6

MOSFET N-CH 30V 26A 8SO

STMicroelectronics

2,537 -
STS26N3LLH6

数据表

DeepGATE™, STripFET™ VI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 4.4mOhm @ 13A, 10V Surface Mount 1V @ 250µA 40 nC @ 4.5 V 30 V ±20V 4040 pF @ 25 V - - 8-SOIC - 2.7W (Ta) -55°C ~ 150°C (TJ)
AOD512

AOD512

MOSFET N-CH 30V 27A/70A TO252

Alpha & Omega Semiconductor Inc.

9,008 -
AOD512

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 70A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V Surface Mount 2V @ 250µA 64 nC @ 10 V 30 V ±20V 3430 pF @ 15 V - - TO-252 (DPAK) - 2.5W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
AON6752

AON6752

MOSFET N-CH 30V 54A/85A 8DFN

Alpha & Omega Semiconductor Inc.

3,429 -
AON6752

数据表

AlphaMOS 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 54A (Ta), 85A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 72 nC @ 10 V 30 V ±20V 3509 pF @ 15 V - Schottky Diode (Body) 8-DFN (5x6) - 7.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1

MOSFET N-CH 650V 2.8A TO252-3

Infineon Technologies

4,123 -
IPD65R1K4CFDBTMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 1.4Ohm @ 1A, 10V Surface Mount 4.5V @ 100µA 10 nC @ 10 V 650 V ±20V 262 pF @ 100 V - - PG-TO252-3 - 28.4W (Tc) -55°C ~ 150°C (TJ)
AON7758

AON7758

MOSFET N-CH 30V 36A/75A 8DFN

Alpha & Omega Semiconductor Inc.

8,327 -
AON7758

数据表

AlphaMOS 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 36A (Ta), 75A (Tc) 4.5V, 10V 1.85mOhm @ 20A, 10V Surface Mount 2V @ 250µA 100 nC @ 10 V 30 V ±12V 5200 pF @ 15 V - - 8-DFN-EP (3.3x3.3) - 4.2W (Ta), 34W (Tc) -55°C ~ 150°C (TJ)
AON6794

AON6794

MOSFET N-CH 30V 39A/85A 8DFN

Alpha & Omega Semiconductor Inc.

3,266 -
AON6794

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 39A (Ta), 85A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V Surface Mount 1.9V @ 250µA 37.5 nC @ 10 V 30 V ±12V 2150 pF @ 15 V - - 8-DFN (5x6) - 6.2W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
BSZ0905PNSATMA1

BSZ0905PNSATMA1

MOSFET P-CH 30V 40A TDSON-8

Infineon Technologies

5,349 -
BSZ0905PNSATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 8.6mOhm @ 20A, 10V Surface Mount 1.9V @ 105µA 43.2 nC @ 10 V 30 V ±25V 3190 pF @ 15 V - - PG-TDSON-8 - 69W (Ta) -55°C ~ 150°C (TJ)
IRF7821TR

IRF7821TR

MOSFET N-CH 30V 13.6A 8SOIC

UMW

6,946 -
IRF7821TR

数据表

* - Active - - - - - - - - - - - - - - - - -
IRFB4620PBFXKMA1

IRFB4620PBFXKMA1

TRENCH >=100V

Infineon Technologies

8,686 -
IRFB4620PBFXKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 72.5mOhm @ 15A, 10V Through Hole 5V @ 100µA 38 nC @ 10 V 200 V ±20V 1710 pF @ 50 V - - PG-TO220-3-904 - 144W (Tc) -55°C ~ 175°C (TJ)
IAUMN08S5N013GAUMA1

IAUMN08S5N013GAUMA1

MOSFET_(75V 120V(

Infineon Technologies

1,965 -
IAUMN08S5N013GAUMA1

数据表

OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250A (Tj) 6V, 10V 1.3mOhm @ 100A, 10V Surface Mount 3.8V @ 214µA 179 nC @ 10 V 80 V ±20V 12496 pF @ 40 V AEC-Q101 - PG-HSOG-4-1 Automotive 307W (Tc) -55°C ~ 175°C (TJ)
FCPF190N60E-F154

FCPF190N60E-F154

MOSFET N-CH 600V 20.6A TO220F-3

onsemi

1,000 -
FCPF190N60E-F154

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20.6A (Tj) - 190mOhm @ 10A, 10V Through Hole 3.5V @ 250µA 82 nC @ 10 V 600 V ±20V 3175 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
TSM8N70CI C0G

TSM8N70CI C0G

MOSFET N-CH 700V 8A ITO220AB

Taiwan Semiconductor Corporation

4,594 -
TSM8N70CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 900mOhm @ 4A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 700 V ±30V 2006 pF @ 25 V - - ITO-220AB - 40W (Tc) -55°C ~ 150°C (TJ)
SIHA4N80E-GE3

SIHA4N80E-GE3

MOSFET N-CH 800V 4.3A TO220

Vishay Siliconix

2,911 -
SIHA4N80E-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 800 V ±30V 622 pF @ 100 V - - TO-220 Full Pack - 69W (Tc) -55°C ~ 150°C (TJ)
PSMN016-100PS,127

PSMN016-100PS,127

MOSFET N-CH 100V 57A TO220AB

Nexperia USA Inc.

6,772 -
PSMN016-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 57A (Tj) 10V 16mOhm @ 15A, 10V Through Hole 4V @ 1mA 49 nC @ 10 V 100 V ±20V 2404 pF @ 50 V - - TO-220AB - 148W (Tc) -55°C ~ 175°C (TJ)
IPA65R380C6XKSA1

IPA65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO220

Infineon Technologies

7,127 -
IPA65R380C6XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V Through Hole 3.5V @ 320µA 39 nC @ 10 V 650 V ±20V 710 pF @ 100 V - - PG-TO220-3-111 - 31W (Tc) -55°C ~ 150°C (TJ)
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