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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP120N04S402AKSA1

IPP120N04S402AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies

302 -
IPP120N04S402AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.1mOhm @ 100A, 10V Through Hole 4V @ 110µA 134 nC @ 10 V 40 V ±20V 10740 pF @ 25 V - - PG-TO220-3-1 - 158W (Tc) -55°C ~ 175°C (TJ)
STP16N60M2

STP16N60M2

MOSFET N-CH 600V 12A TO220

STMicroelectronics

7,723 -
STP16N60M2

数据表

MDmesh™ M2 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 320mOhm @ 6A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 600 V ±25V 700 pF @ 100 V - - TO-220 - 110W (Tc) 150°C (TJ)
IPP70N12S311AKSA1

IPP70N12S311AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies

280 -
IPP70N12S311AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 11.6mOhm @ 70A, 10V Through Hole 4V @ 83µA 65 nC @ 10 V 120 V ±20V 4355 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
IRF6614

IRF6614

MOSFET N-CH 40V 12.7A DIRECTFET

Infineon Technologies

3,432 -
IRF6614

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V Surface Mount 2.25V @ 250µA 29 nC @ 4.5 V 40 V ±20V 2560 pF @ 20 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
DIT195N08

DIT195N08

MOSFET TO220AB N 85V 0.0035OHM

Diotec Semiconductor

981 -
DIT195N08

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 4.95mOhm @ 40A, 10V Through Hole 4V @ 250µA 140 nC @ 10 V 85 V ±20V 16880 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
IRFR9220TRRPBF

IRFR9220TRRPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix

7,994 -
IRFR9220TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 200 V ±20V 340 pF @ 25 V - - DPAK - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
FDS6688S

FDS6688S

MOSFET N-CH 30V 16A 8SOIC

onsemi

3,674 -
FDS6688S

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6mOhm @ 16A, 10V Surface Mount 3V @ 1mA 78 nC @ 10 V 30 V ±20V 3290 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
FDD6672A

FDD6672A

MOSFET N-CH 30V 65A TO252

onsemi

8,388 -
FDD6672A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 65A (Ta) 4.5V, 10V 8mOhm @ 14A, 10V Surface Mount 2V @ 250µA 46 nC @ 4.5 V 30 V ±12V 5070 pF @ 15 V - - TO-252AA - 3.2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ)
PSMB050N10NS2_R2_00601

PSMB050N10NS2_R2_00601

100V/ 5MOHM/ LOW FOM MOSFET

Panjit International Inc.

642 -
PSMB050N10NS2_R2_00601

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tj) 6V, 10V 5mOhm @ 50A, 10V Surface Mount 3.8V @ 270µA 53 nC @ 10 V 100 V ±20V 3910 pF @ 50 V - - TO-263 - 138W (Tc) -55°C ~ 150°C (TJ)
MCGWF60N04YHE3-TP

MCGWF60N04YHE3-TP

POWER MOSFET

Micro Commercial Co

4,940 -
MCGWF60N04YHE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 3.9mOhm @ 40A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 40 V ±20V 2144 pF @ 20 V AEC-Q101 - DFN3333-8 Automotive 93W (Tj) -55°C ~ 175°C (TJ)
NTMFS5H409NLT3G

NTMFS5H409NLT3G

MOSFET N-CH 40V 41A/270A 5DFN

onsemi

9,829 -
NTMFS5H409NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 270A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V Surface Mount 2V @ 250µA 89 nC @ 10 V 40 V ±20V 5700 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 3.2W (Ta), 140W (Tc) -55°C ~ 150°C (TJ)
PJD55N04V-AU_L2_002A1

PJD55N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD55N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.5A (Ta), 128A (Tc) 7V, 10V 3.6mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 34 nC @ 10 V 40 V ±20V 2540 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
PSMP050N10NS2_T0_00601

PSMP050N10NS2_T0_00601

100V/ 5MOHM/ LOW FOM MOSFET

Panjit International Inc.

1,827 -
PSMP050N10NS2_T0_00601

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 5mOhm @ 50A, 10V Through Hole 3.8V @ 270µA 53 nC @ 10 V 100 V ±20V 3910 pF @ 50 V - - TO-220AB-L - 138W (Tc) -55°C ~ 150°C (TJ)
SI7104DN-T1-GE3

SI7104DN-T1-GE3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix

4,918 -
SI7104DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 2.5V, 4.5V 3.7mOhm @ 26.1A, 4.5V Surface Mount 1.8V @ 250µA 70 nC @ 10 V 12 V ±12V 2800 pF @ 6 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
SI8401DB-T1-E3

SI8401DB-T1-E3

MOSFET P-CH 20V 3.6A 4MICROFOOT

Vishay Siliconix

5,428 -
SI8401DB-T1-E3

数据表

TrenchFET® 4-XFBGA, CSPBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 1A, 4.5V Surface Mount 1.4V @ 250µA 17 nC @ 4.5 V 20 V ±12V - - - 4-Microfoot - 1.47W (Ta) -55°C ~ 150°C (TJ)
CMS100N03H8-HF

CMS100N03H8-HF

MOSFET N-CH 30V 100A DFN5X6

Comchip Technology

2,385 -
CMS100N03H8-HF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) - 1.8mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 82 nC @ 10 V 30 V ±20V 4222 pF @ 15 V - - DFN5x6 (PR-PAK) - 3.6W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
DMTH61M5SPSWQ-13

DMTH61M5SPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

9,641 -
DMTH61M5SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 225A (Tc) 10V 1.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V AEC-Q101 - PowerDI5060-8 (SWP) Automotive 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
MCGWF60N06YHE3-TP

MCGWF60N06YHE3-TP

POWER MOSFET

Micro Commercial Co

5,000 -
MCGWF60N06YHE3-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.5 nC @ 10 V 60 V ±20V 1666 pF @ 30 V AEC-Q101 - DFN3333-8 Automotive 60W (Tj) -55°C ~ 175°C (TJ)
IRF9Z24NSTRL

IRF9Z24NSTRL

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies

7,050 -
IRF9Z24NSTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 175mOhm @ 7.2A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 55 V ±20V 350 pF @ 25 V - - D2PAK - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
FDMS4D4N08C

FDMS4D4N08C

MOSFET N-CH 80V 123A 8PQFN

onsemi

2,214 -
FDMS4D4N08C

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 123A (Tc) 6V, 10V 4.3mOhm @ 44A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 80 V ±20V 4090 pF @ 40 V - - 8-PQFN (5x6), Power56 - 125W (Tc) -55°C ~ 150°C (TJ)
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