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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4396DY-T1-GE3

SI4396DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix

5,695 -
SI4396DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 11.5mOhm @ 10A, 10V Surface Mount 2.6V @ 250µA 45 nC @ 10 V 30 V ±20V 1675 pF @ 15 V - - 8-SOIC - 3.1W (Ta), 5.4W (Tc) -55°C ~ 150°C (TJ)
SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3

MOSFET P-CH 60V 5.5A 6TSOP

Vishay Siliconix

2,280 -
SQ3427EEV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Tc) 4.5V, 10V 82mOhm @ 4.5A, 10V Surface Mount 2.5V @ 250µA 32 nC @ 10 V 60 V ±20V 1125 pF @ 30 V - - 6-TSOP - 5W (Tc) -55°C ~ 175°C (TJ)
SQ3419EEV-T1-GE3

SQ3419EEV-T1-GE3

MOSFET P-CH 40V 7.4A 6TSOP

Vishay Siliconix

8,316 -
SQ3419EEV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.4A (Tc) 4.5V, 10V 50mOhm @ 2.5A, 10V Surface Mount 2.5V @ 250µA 15 nC @ 4.5 V 40 V ±12V 1065 pF @ 20 V - - 6-TSOP - 5W (Tc) -55°C ~ 175°C (TJ)
SQ3418EEV-T1-GE3

SQ3418EEV-T1-GE3

MOSFET N-CH 40V 8A 6TSOP

Vishay Siliconix

8,739 -
SQ3418EEV-T1-GE3

数据表

- SOT-23-6 Thin, TSOT-23-6 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) - 32mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 4.5 V 40 V - 660 pF @ 25 V - - 6-TSOP - - -
AON6754

AON6754

MOSFET N-CH 30V 52A/85A 8DFN

Alpha & Omega Semiconductor Inc.

8,750 -
AON6754

数据表

AlphaMOS 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 52A (Ta), 85A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 64 nC @ 10 V 30 V ±20V 2796 pF @ 15 V - Schottky Diode (Body) 8-DFN (5x6) - 7.3W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
NVF3055L108T3G

NVF3055L108T3G

MOSFET N-CH 60V 3A SOT223

onsemi

7,532 -
NVF3055L108T3G

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 5V 120mOhm @ 1.5A, 5V Surface Mount 2V @ 250µA 15 nC @ 5 V 60 V ±15V 440 pF @ 25 V AEC-Q101 - SOT-223 (TO-261) Automotive 1.3W (Ta) -55°C ~ 175°C (TJ)
AO4302

AO4302

MOSFET N-CH 30V 23A 8SOIC

Alpha & Omega Semiconductor Inc.

9,410 -
AO4302

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 63 nC @ 10 V 30 V ±20V 3470 pF @ 15 V - - 8-SOIC - 3.6W (Ta) -55°C ~ 150°C (TJ)
AUIRFS3307Z

AUIRFS3307Z

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies

6,457 -
AUIRFS3307Z

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5.8mOhm @ 75A, 10V Surface Mount 4V @ 150µA 110 nC @ 10 V 75 V ±20V 4750 pF @ 50 V - - PG-TO263-3 - 230W (Tc) -55°C ~ 175°C (TJ)
SPP47N10L

SPP47N10L

MOSFET N-CH 100V 47A TO220-3

Infineon Technologies

2,052 -
SPP47N10L

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V Through Hole 2V @ 2mA 135 nC @ 10 V 100 V ±20V 2500 pF @ 25 V - - PG-TO220-3-1 - 175W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2905ZTR

AUIRFR2905ZTR

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

4,892 -
AUIRFR2905ZTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) - 14.5mOhm @ 36A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 55 V - 1380 pF @ 25 V - - TO-252AA (DPAK) - - -
HUFA76437S3ST

HUFA76437S3ST

MOSFET N-CH 60V 71A D2PAK

onsemi

8,305 -
HUFA76437S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
HUFA75637S3ST

HUFA75637S3ST

MOSFET N-CH 100V 44A D2PAK

onsemi

8,850 -
HUFA75637S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Surface Mount 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
NVATS5A114PLZT4G

NVATS5A114PLZT4G

MOSFET P-CHANNEL 60V 60A ATPAK

onsemi

9,335 -
NVATS5A114PLZT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60A (Ta) 4V, 10V 16mOhm @ 28A, 10V Surface Mount 2.6V @ 1mA 92 nC @ 10 V 60 V ±20V 4000 pF @ 20 V AEC-Q101 - ATPAK Automotive 72W (Tc) -55°C ~ 175°C (TJ)
FQAF65N06

FQAF65N06

MOSFET N-CH 60V 49A TO3PF

onsemi

2,126 -
FQAF65N06

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 16mOhm @ 24.5A, 10V Through Hole 4V @ 250µA 65 nC @ 10 V 60 V ±25V 2410 pF @ 25 V - - TO-3PF - 86W (Tc) -55°C ~ 175°C (TJ)
IPD50N10S3L16ATMA2

IPD50N10S3L16ATMA2

MOSFET_(75V 120V(

Infineon Technologies

4,625 -
IPD50N10S3L16ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 15mOhm @ 50A, 10V Surface Mount 2.4V @ 60µA 64 nC @ 10 V 100 V ±20V 4180 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 100W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C430NWFET1G

NVMFS5C430NWFET1G

T6-40V N 1.7 MOHMS SL

onsemi

1,500 -
NVMFS5C430NWFET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.5V @ 250µA 47 nC @ 10 V 40 V ±20V 3300 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ)
IRF7321D2TR

IRF7321D2TR

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies

6,747 -
IRF7321D2TR

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V Surface Mount 1V @ 250µA 34 nC @ 10 V 30 V ±20V 710 pF @ 25 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
TSM900N10CH

TSM900N10CH

100V, 15A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,860 -
TSM900N10CH

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V Through Hole 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - TO-251S (IPAK SL) - 50W (Tc) -55°C ~ 150°C (TJ)
IPP020N06NXKSA1

IPP020N06NXKSA1

TRENCH 40<-<100V

Infineon Technologies

498 -
IPP020N06NXKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V Through Hole 3.3V @ 143µA 124 nC @ 10 V 60 V ±20V 9750 pF @ 30 V - - PG-TO220-3-1 - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
AOT286L

AOT286L

MOSFET N-CH 80V 13A/70A TO220

Alpha & Omega Semiconductor Inc.

3,060 -
AOT286L

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 70A (Tc) 6V, 10V 6mOhm @ 20A, 10V Through Hole 3.3V @ 250µA 63 nC @ 10 V 80 V ±20V 3142 pF @ 40 V - - TO-220 - 2.1W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
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