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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHA15N50E-E3

SIHA15N50E-E3

MOSFET N-CH 500V 14.5A TO220

Vishay Siliconix

968 -
SIHA15N50E-E3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V Through Hole 4V @ 250µA 66 nC @ 10 V 500 V ±30V 1162 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
PJD45N15S-AU_L2_006A1

PJD45N15S-AU_L2_006A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJD45N15S-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRLI620GPBF

IRLI620GPBF

MOSFET N-CH 200V 4A TO220-3

Vishay Siliconix

4,774 -
IRLI620GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 4V, 5V 800mOhm @ 2.4A, 5V Through Hole 2V @ 250µA 16 nC @ 10 V 200 V ±10V 360 pF @ 25 V - - TO-220-3 - 30W (Tc) -55°C ~ 150°C (TJ)
PJD70N10SA-AU_L2_006A1

PJD70N10SA-AU_L2_006A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2,990 -
PJD70N10SA-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NTMFS5113PLT1G

NTMFS5113PLT1G

NFET SO8FL 60V 69A 16MOHM

onsemi

2,987 -
NTMFS5113PLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta), 64A (Tc) 4.5V, 10V 14mOhm @ 17A, 10V Surface Mount 2.5V @ 250µA 83 nC @ 10 V 60 V ±20V 4400 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
DMTH10H4M6SPSWQ-13

DMTH10H4M6SPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,792 -
DMTH10H4M6SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 115A (Tc) 10V 4.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 66 nC @ 10 V 100 V ±20V 4327 pF @ 50 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
XP65SL380DH

XP65SL380DH

MOSFET N-CH 650V 10A TO252

YAGEO XSEMI

997 -
XP65SL380DH

数据表

XP65SL380D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 3.2A, 10V Surface Mount 5V @ 250µA 52.8 nC @ 10 V 650 V ±20V 1860 pF @ 100 V - - TO-252 - 2W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ)
IPD70N12S311ATMA2

IPD70N12S311ATMA2

MOSFET_(120V 300V)

Infineon Technologies

5,638 -
IPD70N12S311ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 11.1mOhm @ 70A, 10V Surface Mount 4V @ 83µA 65 nC @ 10 V 120 V ±20V 4355 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
TQM025NH04CR RLG

TQM025NH04CR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

5,000 -
TQM025NH04CR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 100A (Tc) 7V, 10V 2.5mOhm @ 50A, 10V Surface Mount, Wettable Flank 3.6V @ 250µA 89 nC @ 10 V 40 V ±20V 5691 pF @ 25 V AEC-Q101 - 8-PDFNU (4.9x5.75) Automotive 136W (Tc) -55°C ~ 175°C (TJ)
STP16NS25

STP16NS25

MOSFET N-CH 250V 16A TO220AB

STMicroelectronics

9,813 -
STP16NS25

数据表

MESH OVERLAY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 280mOhm @ 8A, 10V Through Hole 4V @ 250µA 83 nC @ 10 V 250 V ±20V 1270 pF @ 25 V - - TO-220 - 140W (Tc) -65°C ~ 150°C (TJ)
TQM025NH04LCR RLG

TQM025NH04LCR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

5,000 -
TQM025NH04LCR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount, Wettable Flank 2.2V @ 250µA 95 nC @ 10 V 40 V ±16V 6228 pF @ 25 V AEC-Q101 - 8-PDFNU (4.9x5.75) Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IPB60R280P6ATMA1

IPB60R280P6ATMA1

MOSFET N-CH 600V 13.8A D2PAK

Infineon Technologies

982 -
IPB60R280P6ATMA1

数据表

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V Surface Mount 4.5V @ 430µA 25.5 nC @ 10 V 600 V ±20V 1190 pF @ 100 V - - PG-TO263-3 - 104W (Tc) -55°C ~ 150°C (TJ)
STB75NH02LT4

STB75NH02LT4

MOSFET N-CH 24V 60A D2PAK

STMicroelectronics

6,152 -
STB75NH02LT4

数据表

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 5V, 10V 8mOhm @ 30A, 10V Surface Mount 1.8V @ 250µA 22 nC @ 5 V 24 V ±20V 2050 pF @ 15 V - - D2PAK - 80W (Tc) -55°C ~ 175°C (TJ)
FQPF9N50T

FQPF9N50T

MOSFET N-CH 500V 5.3A TO220F

onsemi

7,323 -
FQPF9N50T

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
PJQ5540-AU_R2_002A1

PJQ5540-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJQ5540-AU_R2_002A1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 192A (Tc) 4.5V, 10V 1.88mOhm @ 20A, 10V Surface Mount 2.3V @ 50µA 75 nC @ 10 V 40 V ±20V 4950 pF @ 25 V AEC-Q101 - DFN5060X-8L Automotive 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
STP6NM60N

STP6NM60N

MOSFET N-CH 600V 4.6A TO220AB

STMicroelectronics

8,160 -
STP6NM60N

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Tc) 10V 920mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 600 V ±25V 420 pF @ 50 V - - TO-220 - 45W (Tc) -55°C ~ 150°C (TJ)
NVMFS6H858NWFT1G

NVMFS6H858NWFT1G

MOSFET N-CH 80V 8.4A/29A 5DFN

onsemi

1,400 -
NVMFS6H858NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.4A (Ta), 29A (Tc) 10V 20.7mOhm @ 5A, 10V Surface Mount, Wettable Flank 4V @ 30µA 8.9 nC @ 10 V 80 V ±20V 510 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
STL325N4F8AG

STL325N4F8AG

POWERFLAT 5X6 WF

STMicroelectronics

500 -
STL325N4F8AG

数据表

STripFET™ F8 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 373A (Tc) 4.5V, 10V 0.75mOhm @ 60A, 10V Surface Mount 2V @ 250µA 95 nC @ 10 V 40 V ±16V 7657 pF @ 25 V - - PowerFlat™ (5x6) - 188W (Tc) -55°C ~ 175°C (TJ)
STP78NF55-08

STP78NF55-08

MOSFET N-CH 550V TO-220

STMicroelectronics

8,829 -
STP78NF55-08

数据表

STripFET™ II - Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 40A, 10V Through Hole 4V @ 250µA 155 nC @ 10 V 55 V ±20V 3740 pF @ 25 V - - TO-220 - 300W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4292TRL

AUIRFR4292TRL

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies

9,665 -
AUIRFR4292TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Surface Mount 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - DPAK - 100W (Tc) -55°C ~ 175°C (TJ)
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