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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFT20N60Q

IXFT20N60Q

MOSFET N-CH 600V 20A TO268

IXYS

6,632 -
IXFT20N60Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 350mOhm @ 10A, 10V Surface Mount 4.5V @ 4mA 90 nC @ 10 V 600 V ±30V 3300 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
IXFT20N80Q

IXFT20N80Q

MOSFET N-CH 800V 20A TO268

IXYS

8,857 -
IXFT20N80Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 420mOhm @ 10A, 10V Surface Mount 4.5V @ 4mA 200 nC @ 10 V 800 V ±20V 5100 pF @ 25 V - - TO-268AA - 360W (Tc) -55°C ~ 150°C (TJ)
IXFT21N50Q

IXFT21N50Q

MOSFET N-CH 500V 21A TO268

IXYS

6,388 -
IXFT21N50Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 250mOhm @ 10.5A, 10V Surface Mount 4.5V @ 4mA 84 nC @ 10 V 500 V ±30V 3000 pF @ 25 V - - TO-268AA - 280W (Tc) -55°C ~ 150°C (TJ)
IXFT26N50Q

IXFT26N50Q

MOSFET N-CH 500V 26A TO268

IXYS

3,372 -
IXFT26N50Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 200mOhm @ 13A, 10V Surface Mount 4.5V @ 4mA 95 nC @ 10 V 500 V ±20V 3900 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
IXFT26N60Q

IXFT26N60Q

MOSFET N-CH 600V 26A TO268

IXYS

3,694 -
IXFT26N60Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 250mOhm @ 13A, 10V Surface Mount 4.5V @ 4mA 200 nC @ 10 V 600 V ±20V 5100 pF @ 25 V - - TO-268AA - 360W (Tc) -55°C ~ 150°C (TJ)
IXFT28N50Q

IXFT28N50Q

MOSFET N-CH 500V 28A TO268

IXYS

6,353 -
IXFT28N50Q

数据表

HiPerFET™, Q Class TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Box Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 200mOhm @ 14A, 10V Surface Mount 4.5V @ 4mA 94 nC @ 10 V 500 V ±30V 3000 pF @ 25 V - - TO-268AA - 375W (Tc) -55°C ~ 150°C (TJ)
IXFT30N60Q

IXFT30N60Q

MOSFET N-CH 600V 30A TO268

IXYS

2,687 -
IXFT30N60Q

数据表

HiPerFET™, Q Class TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Box Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 230mOhm @ 500mA, 10V Surface Mount 4.5V @ 4mA 125 nC @ 10 V 600 V ±20V 4700 pF @ 25 V - - TO-268AA - 500W (Tc) -55°C ~ 150°C (TJ)
IXFT60N25Q

IXFT60N25Q

MOSFET N-CH 250V 60A TO268

IXYS

8,373 -
IXFT60N25Q

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 47mOhm @ 500mA, 10V Surface Mount 4V @ 4mA 180 nC @ 10 V 250 V ±20V 5100 pF @ 25 V - - TO-268AA - 360W (Tc) -55°C ~ 150°C (TJ)
IXFV12N80P

IXFV12N80P

MOSFET N-CH 800V 12A PLUS220

IXYS

7,807 -
IXFV12N80P

数据表

HiPerFET™, PolarHT™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 850mOhm @ 500mA, 10V Through Hole 5.5V @ 2.5mA 51 nC @ 10 V 800 V ±30V 2800 pF @ 25 V - - PLUS220 - 360W (Tc) -55°C ~ 150°C (TJ)
IXFV12N80PS

IXFV12N80PS

MOSFET N-CH 800V 12A PLUS-220SMD

IXYS

3,914 -
IXFV12N80PS

数据表

HiPerFET™, PolarHT™ PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 850mOhm @ 500mA, 10V Surface Mount 5.5V @ 2.5mA 51 nC @ 10 V 800 V ±30V 2800 pF @ 25 V - - PLUS-220SMD - 360W (Tc) -55°C ~ 150°C (TJ)
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