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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXKH47N60C

IXKH47N60C

MOSFET N-CH 600V 47A TO247AD

IXYS

30 -
IXKH47N60C

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 70mOhm @ 30A, 10V Through Hole 4V @ 2mA 650 nC @ 10 V 600 V ±20V - - - TO-247AD - - -55°C ~ 150°C (TJ)
IXTT110N10L2

IXTT110N10L2

MOSFET N-CH 100V 110A TO268

IXYS

46 -
IXTT110N10L2

数据表

Linear L2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 18mOhm @ 55A, 10V Surface Mount 4.5V @ 250µA 260 nC @ 10 V 100 V ±20V 10500 pF @ 25 V - - TO-268AA - 600W (Tc) -55°C ~ 150°C (TJ)
IXTX20N150

IXTX20N150

MOSFET N-CH 1500V 20A PLUS247-3

IXYS

30 -
IXTX20N150

数据表

- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 1Ohm @ 10A, 10V Through Hole 4.5V @ 1mA 215 nC @ 10 V 1500 V ±30V 7800 pF @ 25 V - - PLUS247™-3 - 1250W (Tc) -55°C ~ 150°C (TJ)
IXTY1R6N50P

IXTY1R6N50P

MOSFET N-CH 500V 1.6A TO252

IXYS

2,159 -
IXTY1R6N50P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 6.5Ohm @ 500mA, 10V Surface Mount 5.5V @ 25µA 3.9 nC @ 10 V 500 V ±30V 140 pF @ 25 V - - TO-252AA - 43W (Tc) -55°C ~ 150°C (TJ)
IXTY2R4N50P

IXTY2R4N50P

MOSFET N-CH 500V 2.4A TO252

IXYS

6,940 -
IXTY2R4N50P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.75Ohm @ 500mA, 10V Surface Mount 5.5V @ 25µA 6.1 nC @ 10 V 500 V ±30V 240 pF @ 25 V - - TO-252AA - 55W (Tc) -55°C ~ 150°C (TJ)
IXTP2R4N50P

IXTP2R4N50P

MOSFET N-CH 500V 2.4A TO220AB

IXYS

2,225 -
IXTP2R4N50P

数据表

PolarHV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3.75Ohm @ 500mA, 10V Through Hole 5.5V @ 25µA 6.1 nC @ 10 V 500 V ±30V 240 pF @ 25 V - - TO-220-3 - 55W (Tc) -55°C ~ 150°C (TJ)
IXTY3N50P

IXTY3N50P

MOSFET N-CH 500V 3.6A TO252AA

IXYS

4,304 -
IXTY3N50P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2Ohm @ 1.8A, 10V Surface Mount 5.5V @ 50µA 9.3 nC @ 10 V 500 V ±30V 409 pF @ 25 V - - TO-252AA - 70W (Tc) -55°C ~ 150°C (TJ)
IXTP3N50P

IXTP3N50P

MOSFET N-CH 500V 3.6A TO220AB

IXYS

4,848 -
IXTP3N50P

数据表

PolarHV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2Ohm @ 1.8A, 10V Through Hole 5.5V @ 50µA 9.3 nC @ 10 V 500 V ±30V 409 pF @ 25 V - - TO-220-3 - 70W (Tc) -55°C ~ 150°C (TJ)
IXTA3N50P

IXTA3N50P

MOSFET N-CH 500V 3.6A TO263

IXYS

9,329 -
IXTA3N50P

数据表

PolarHV™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2Ohm @ 1.8A, 10V Surface Mount 5.5V @ 50µA 9.3 nC @ 10 V 500 V ±30V 409 pF @ 25 V - - TO-263AA - 70W (Tc) -55°C ~ 150°C (TJ)
IXTP5N50P

IXTP5N50P

MOSFET N-CH 500V 4.8A TO220AB

IXYS

6,099 -
IXTP5N50P

数据表

PolarHV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 1.4Ohm @ 2.4A, 10V Through Hole 5.5V @ 50µA 12.6 nC @ 10 V 500 V ±30V 620 pF @ 25 V - - TO-220-3 - 89W (Tc) -55°C ~ 150°C (TJ)
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