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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCB60I1200TZ1200V 90A SIC POWER MOSFET IXYS |
5,189 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | Surface Mount | 4V @ 15mA | 160 nC @ 20 V | 1200 V | +20V, -5V | 2790 pF @ 1000 V | - | - | TO-268AA (D3Pak-HV) | - | - | -40°C ~ 175°C (TJ) |
|
|
MCB60I1200TZ-TUBSICFET N-CH 1.2KV 90A TO268AA IXYS |
9,441 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | Surface Mount | 4V @ 15mA | 160 nC @ 20 V | 1200 V | +20V, -5V | 2790 pF @ 1000 V | - | - | TO-268AA (D3Pak-HV) | - | - | -40°C ~ 175°C (TJ) |
|
VMO1200-01FMOSFET N-CH 100V 1220A Y3-LI IXYS |
5,864 | - |
|
数据表 |
HiPerFET™ | Y3-Li | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1220A (Tc) | 10V | 1.35mOhm @ 932A, 10V | Chassis Mount | 4V @ 64mA | 2520 nC @ 10 V | 100 V | ±20V | - | - | - | Y3-Li | - | - | -40°C ~ 150°C (TJ) |
|
|
VM0550-2FMOSFET N-CH 100V 590A MODULE IXYS |
7,888 | - |
|
数据表 |
HiPerFET™ | Module | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 590A (Tc) | - | 2.1mOhm @ 500mA, 10V | Chassis Mount | - | 2000 nC @ 10 V | 100 V | - | 50000 pF @ 25 V | - | - | Module | - | 2200W | - |
|
VMO580-02FMOSFET N-CH 200V 580A Y3-LI IXYS |
3,845 | - |
|
数据表 |
HiPerFET™ | Y3-Li | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | Chassis Mount | 4V @ 50mA | 2750 nC @ 10 V | 200 V | ±20V | - | - | - | Y3-Li | - | - | -40°C ~ 150°C (TJ) |
|
|
VMO1600-02PMOSFET N-CH 200V 1900A Y3-LI IXYS |
6,845 | - |
|
数据表 |
PolarHT™ | Y3-Li | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1900A (Tc) | 10V | 1.7mOhm @ 1600A, 10V | Chassis Mount | 5V @ 5mA | 2900 nC @ 10 V | 200 V | ±20V | - | - | - | Y3-Li | - | - | -40°C ~ 150°C (TJ) |
|
IXFN90N170SKSICFET N-CH 1700V 90A SOT227B IXYS |
2,386 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 90A (Tc) | 20V | 35mOhm @ 100A, 20V | Chassis Mount | 4V @ 36mA | 376 nC @ 20 V | 1700 V | +20V, -5V | 7340 pF @ 1000 V | - | - | SOT-227B | - | - | -40°C ~ 150°C (TJ) |
|
|
VMO550-01FMOSFET N-CH 100V 590A Y3-DCB IXYS |
5,123 | - |
|
数据表 |
HiPerFET™ | Y3-DCB | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 590A (Tc) | 10V | 2.1mOhm @ 500mA, 10V | Chassis Mount | 6V @ 110mA | 2000 nC @ 10 V | 100 V | ±20V | 50000 pF @ 25 V | - | - | Y3-DCB | - | 2200W (Tc) | -40°C ~ 150°C (TJ) |
|
IXFH42N20MOSFET N-CH 200V 42A TO247AD IXYS |
2,585 | - |
|
数据表 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 60mOhm @ 500mA, 10V | Through Hole | 4V @ 4mA | 220 nC @ 10 V | 200 V | ±20V | 4400 pF @ 25 V | - | - | TO-247AD (IXFH) | - | 300W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IXFH58N20MOSFET N-CH 200V 58A TO247AD IXYS |
8,283 | - |
|
数据表 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | Through Hole | 4V @ 4mA | 220 nC @ 10 V | 200 V | ±20V | 4400 pF @ 25 V | - | - | TO-247AD (IXFH) | - | 300W (Tc) | -55°C ~ 150°C (TJ) |
