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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFX90N20Q

IXFX90N20Q

MOSFET N-CH 200V 90A PLUS247-3

IXYS

5,039 -
IXFX90N20Q

数据表

HiPerFET™, Q Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 22mOhm @ 45A, 10V Through Hole 4V @ 4mA 190 nC @ 10 V 200 V ±20V 6800 pF @ 25 V - - PLUS247™-3 - 500W (Tc) -55°C ~ 150°C (TJ)
IXFH270N06T3

IXFH270N06T3

MOSFET N-CH 60V 270A TO247

IXYS

495 -
IXFH270N06T3

数据表

HiperFET™, TrenchT3™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 270A (Tc) 10V 3.1mOhm @ 100A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 60 V ±20V 12600 pF @ 25 V - - TO-247 (IXTH) - 480W (Tc) -55°C ~ 175°C (TJ)
IXTH20N60

IXTH20N60

MOSFET N-CH 600V 20A TO247

IXYS

2,576 -
IXTH20N60

数据表

MegaMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 350mOhm @ 10A, 10V Through Hole 4.5V @ 250µA 170 nC @ 10 V 600 V ±20V 4500 pF @ 25 V - - TO-247 (IXTH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFX55N50F

IXFX55N50F

MOSFET N-CH 500V 55A PLUS247-3

IXYS

4,525 -
IXFX55N50F

数据表

HiPerRF™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 85mOhm @ 27.5A, 10V Through Hole 5.5V @ 8mA 195 nC @ 10 V 500 V ±20V 6700 pF @ 25 V - - PLUS247™-3 - 560W (Tc) -55°C ~ 150°C (TJ)
IXFH50N20

IXFH50N20

MOSFET N-CH 200V 50A TO247AD

IXYS

253 -
IXFH50N20

数据表

HiPerFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 45mOhm @ 25A, 10V Through Hole 4V @ 4mA 220 nC @ 10 V 200 V ±20V 4400 pF @ 25 V - - TO-247AD (IXFH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFK110N07

IXFK110N07

MOSFET N-CH 70V 110A TO264AA

IXYS

1,225 -
IXFK110N07

数据表

HiPerFET™ TO-264-3, TO-264AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 6mOhm @ 55A, 10V Through Hole 4V @ 8mA 480 nC @ 10 V 70 V ±20V 9000 pF @ 25 V - - TO-264AA (IXFK) - 500W (Tc) -55°C ~ 150°C (TJ)
MMIX1F160N30T

MMIX1F160N30T

MOSFET N-CH 300V 102A 24SMPD

IXYS

460 -
MMIX1F160N30T

数据表

GigaMOS™, HiPerFET™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 102A (Tc) 10V 20mOhm @ 60A, 10V Surface Mount 5V @ 8mA 335 nC @ 10 V 300 V ±20V 2800 pF @ 25 V - - 24-SMPD - 570W (Tc) -55°C ~ 150°C (TJ)
IXFR40N50Q2

IXFR40N50Q2

MOSFET N-CH 500V 29A ISOPLUS247

IXYS

2,245 -
IXFR40N50Q2

数据表

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 170mOhm @ 20A, 10V Through Hole 5V @ 4mA 110 nC @ 10 V 500 V ±30V 4200 pF @ 25 V - - ISOPLUS247™ - 320W (Tc) -55°C ~ 150°C (TJ)
IXTH24N50

IXTH24N50

MOSFET N-CH 500V 24A TO247

IXYS

5,335 -
IXTH24N50

数据表

MegaMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 230mOhm @ 12A, 10V Through Hole 4V @ 250µA 190 nC @ 10 V 500 V ±20V 4200 pF @ 25 V - - TO-247 (IXTH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXTH1N200P3

IXTH1N200P3

MOSFET N-CH 2000V 1A TO247

IXYS

31 -
IXTH1N200P3

数据表

Polar P3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 40Ohm @ 500mA, 10V Through Hole 4V @ 250µA 23.5 nC @ 10 V 2000 V ±20V 646 pF @ 25 V - - TO-247 (IXTH) - 125W (Tc) -55°C ~ 150°C (TJ)
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