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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCQ08N06-TP

MCQ08N06-TP

N-CHANNEL MOSFET, SOP-8 PACKAGE

Micro Commercial Co

4,378 -
MCQ08N06-TP

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta) 4.5V, 10V 19.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 60 V ±20V 864 pF @ 30 V - - 8-SOP - 1.4W (Ta) -55°C ~ 175°C (TJ)
PJQ5419_R2_00001

PJQ5419_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

6,356 -
PJQ5419_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.5A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 4.5 V 30 V ±20V 1169 pF @ 15 V - - DFN5060-8 - 2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ)
NVTFS015P03P8ZTAG

NVTFS015P03P8ZTAG

PT8P PORTFOLIO EXPANSION

onsemi

8,648 -
NVTFS015P03P8ZTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 17A (Ta), 88.6A (Tc) 4.5V, 10V 7.5mOhm @ 12A, 10V Surface Mount 3V @ 250µA 105 nC @ 10 V 30 V ±25V 2706 pF @ 15 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 88.2W (Tc) -55°C ~ 175°C (TJ)
IPI26CN10N G

IPI26CN10N G

MOSFET N-CH 100V 35A TO262-3

Infineon Technologies

6,171 -
IPI26CN10N G

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 26mOhm @ 35A, 10V Through Hole 4V @ 39µA 31 nC @ 10 V 100 V ±20V 2070 pF @ 50 V - - PG-TO262-3 - 71W (Tc) -55°C ~ 175°C (TJ)
IRFR5410TRL

IRFR5410TRL

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

2,913 -
IRFR5410TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 205mOhm @ 7.8A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 760 pF @ 25 V - - TO-252AA (DPAK) - 66W (Tc) -55°C ~ 150°C (TJ)
IRFR5410TRR

IRFR5410TRR

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

2,053 -
IRFR5410TRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 205mOhm @ 7.8A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 760 pF @ 25 V - - TO-252AA (DPAK) - 66W (Tc) -55°C ~ 150°C (TJ)
IRLZ34L

IRLZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix

7,525 -
IRLZ34L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V Through Hole 2V @ 250µA 35 nC @ 5 V 60 V ±10V 1600 pF @ 25 V - - TO-262-3 - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ)
IRFI734GPBF

IRFI734GPBF

MOSFET N-CH 450V 3.4A TO220-3

Vishay Siliconix

5,468 -
IRFI734GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 4V @ 250µA 45 nC @ 10 V 450 V ±20V 680 pF @ 25 V - - TO-220-3 - 35W (Tc) -55°C ~ 150°C (TJ)
STB70N10F4

STB70N10F4

MOSFET N-CH 100V 65A D2PAK

STMicroelectronics

2,764 -
STB70N10F4

数据表

DeepGATE™, STripFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 19.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 85 nC @ 10 V 100 V ±20V 5800 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
STP6N80K5

STP6N80K5

MOSFET N-CH 800V 4.5A TO220

STMicroelectronics

3,416 -
STP6N80K5

数据表

SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V Through Hole 5V @ 100µA 7.5 nC @ 10 V 800 V 30V 255 pF @ 100 V - - TO-220 - 85W (Tc) -55°C ~ 150°C (TJ)
IPD100N04S4L02ATMA1

IPD100N04S4L02ATMA1

MOSFET N-CHANNEL_30/40V

Infineon Technologies

2,086 -
IPD100N04S4L02ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V Surface Mount 2.2V @ 95µA 156 nC @ 10 V 40 V +20V, -16V 12800 pF @ 25 V AEC-Q101 - PG-TO252-3-313 Automotive 150W (Tc) -55°C ~ 175°C (TJ)
STD13N60M6

STD13N60M6

MOSFET N-CH 600V 10A DPAK

STMicroelectronics

6,790 -
STD13N60M6

数据表

MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 5A, 10V Surface Mount 4.75V @ 250µA 13 nC @ 10 V 600 V ±25V 509 pF @ 100 V - - TO-252 (DPAK) - 92W (Tc) -55°C ~ 150°C (TJ)
IRLZ24SPBF

IRLZ24SPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix

5,701 -
IRLZ24SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V Surface Mount 2V @ 250µA 18 nC @ 5 V 60 V ±10V 870 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
TSM60NC620CP ROG

TSM60NC620CP ROG

600V, 7A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
TSM60NC620CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 5V @ 1mA 15 nC @ 10 V 600 V ±20V 498 pF @ 300 V - - TO-252 (DPAK) - 78W (Tc) -55°C ~ 150°C (TJ)
IPB80N04S2H4ATMA1

IPB80N04S2H4ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,134 -
IPB80N04S2H4ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.7mOhm @ 80A, 10V Surface Mount 4V @ 250µA 148 nC @ 10 V 40 V ±20V 4400 pF @ 25 V - - PG-TO263-3-2 - 300W (Tc) -55°C ~ 175°C (TJ)
IRLR9343-701PBF

IRLR9343-701PBF

MOSFET P-CH 55V 20A IPAK

Infineon Technologies

3,570 -
IRLR9343-701PBF

数据表

HEXFET® TO-252-4, DPAK (3 Leads + Tab) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V Surface Mount 1V @ 250µA 47 nC @ 10 V 55 V ±20V 660 pF @ 50 V - - I-PAK (LF701) - 79W (Tc) -40°C ~ 175°C (TJ)
PSMN3R3-40MSHX

PSMN3R3-40MSHX

MOSFET N-CH 40V 118A LFPAK33

Nexperia USA Inc.

2,990 -
PSMN3R3-40MSHX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 118A (Tc) 10V 3.3mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 42 nC @ 10 V 40 V ±20V 3063 pF @ 20 V - - LFPAK33 - 101W (Tc) -55°C ~ 175°C (TJ)
NVMFS4C05NWFT1G

NVMFS4C05NWFT1G

MOSFET N-CH 30V 24.7A/116A 5DFN

onsemi

2,970 -
NVMFS4C05NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24.7A (Ta), 116A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 30 nC @ 10 V 30 V ±20V 1972 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.61W (Ta), 79W (Tc) -55°C ~ 175°C (TJ)
XP4NA1R4CMT-A

XP4NA1R4CMT-A

MOSFET N-CH 45V 49A 223A PMPAK

YAGEO XSEMI

1,000 -
XP4NA1R4CMT-A

数据表

XP4NA1R4C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Ta), 223A (Tc) 4.5V, 10V 1.4mOhm @ 20A, 10V Surface Mount 3V @ 250µA 75.2 nC @ 4.5 V 45 V ±20V 7200 pF @ 20 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
NVMFS6H824NWFT1G

NVMFS6H824NWFT1G

MOSFET N-CH 80V 19A/103A 5DFN

onsemi

265 -
NVMFS6H824NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 103A (Tc) 10V 4.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 140µA 38 nC @ 10 V 80 V ±20V 2470 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.8W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
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