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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4626ADY-T1-GE3

SI4626ADY-T1-GE3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix

9,876 -
SI4626ADY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 125 nC @ 10 V 30 V ±20V 5370 pF @ 15 V - - 8-SOIC - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ)
FQPF27N25T

FQPF27N25T

MOSFET N-CH 250V 14A TO220F

onsemi

8,032 -
FQPF27N25T

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 110mOhm @ 7A, 10V Through Hole 5V @ 250µA 65 nC @ 10 V 250 V ±30V 2450 pF @ 25 V - - TO-220F-3 - 55W (Tc) -55°C ~ 150°C (TJ)
ZXMN15A27KTC

ZXMN15A27KTC

MOSFET N-CH 150V 1.7A TO252-3

Diodes Incorporated

17 -
ZXMN15A27KTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 10V 650mOhm @ 2.15A, 10V Surface Mount 4V @ 250µA 6.6 nC @ 10 V 150 V ±25V 169 pF @ 25 V - - TO-252-3 - 2.2W (Ta) -55°C ~ 150°C (TJ)
R6007RND3TL1

R6007RND3TL1

600V 7A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

3,017 -
R6007RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 15V 940mOhm @ 3.5A, 15V Surface Mount 7V @ 1mA 17.5 nC @ 15 V 600 V ±30V 460 pF @ 100 V - - TO-252 - 96W (Tc) 150°C (TJ)
PJD50N04V-AU_L2_002A1

PJD50N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD50N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.8A (Ta), 80A (Tc) 7V, 10V 5.9mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 23 nC @ 10 V 40 V ±20V 1287 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 68W (Tc) -55°C ~ 175°C (TJ)
RD3P06BBKHRBTL

RD3P06BBKHRBTL

NCH 100V 59A, TO-252 (DPAK), POW

Rohm Semiconductor

2,945 -
RD3P06BBKHRBTL

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN4R1-60YLX

PSMN4R1-60YLX

MOSFET N-CH 60V 100A LFPAK56

Nexperia USA Inc.

2,713 -
PSMN4R1-60YLX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 4.1mOhm @ 25A, 10V Surface Mount 2.1V @ 1mA 103 nC @ 10 V 60 V ±20V 7853 pF @ 25 V - - LFPAK56, Power-SO8 - 238W (Tc) -55°C ~ 175°C (TJ)
R6009KND3TL1

R6009KND3TL1

NCH 600V 9A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,500 -
R6009KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 5V @ 1mA 16.5 nC @ 10 V 600 V ±20V 540 pF @ 25 V - - TO-252 - 94W (Tc) 150°C (TJ)
DI5A7N65D1K-AQ

DI5A7N65D1K-AQ

MOSFET, DPAK, 650V, 5.7A, 150C,

Diotec Semiconductor

2,480 -
DI5A7N65D1K-AQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.7A (Tc) 10V 430mOhm @ 4A, 10V Surface Mount 4V @ 250µA 18.4 nC @ 10 V 650 V ±30V 722 pF @ 325 V - - TO-252AA (DPAK) - 36W (Tc) -55°C ~ 150°C (TJ)
TK60S06K3L(T6L1,NQ

TK60S06K3L(T6L1,NQ

MOSFET N-CH 60V 60A DPAK

Toshiba Semiconductor and Storage

1,755 -
TK60S06K3L(T6L1,NQ

数据表

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Ta) 6V, 10V 8mOhm @ 30A, 10V Surface Mount 3V @ 1mA 60 nC @ 10 V 60 V ±20V 2900 pF @ 10 V - - DPAK+ - 88W (Tc) 175°C (TJ)
PSMN1R4-40YSHX

PSMN1R4-40YSHX

NEXTPOWERS3 MOSFETS

Nexperia USA Inc.

1,474 -
PSMN1R4-40YSHX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1.4mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 96 nC @ 10 V 40 V ±20V 7523 pF @ 20 V - - LFPAK56, Power-SO8 - 333W (Tc) -55°C ~ 175°C (TJ)
SIR5623DP-T1-RE3

SIR5623DP-T1-RE3

P-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

10,693 -
SIR5623DP-T1-RE3

数据表

- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.5A (Ta), 37.1A(Tc) 4.5V, 10V 24mOhm @ 10A, 10V Surface Mount 2.6V @ 250µA 33 nC @ 10 V 60 V ±20V 1575 pF @ 30 V - - PowerPAK® SO-8 - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
PSMQC074N10NS2_R2_00201

PSMQC074N10NS2_R2_00201

100V/ 7.4M/ EXCELLECT LOW FOM MO

Panjit International Inc.

6,000 -
PSMQC074N10NS2_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVMYS1D7N04CT1G

NVMYS1D7N04CT1G

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi

3,000 -
NVMYS1D7N04CT1G

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V Surface Mount 4V @ 210µA 50 nC @ 10 V 40 V ±20V 3125 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ)
NVMYS1D6N04CLT1G

NVMYS1D6N04CLT1G

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi

2,900 -
NVMYS1D6N04CLT1G

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V Surface Mount 3V @ 210µA 71 nC @ 10 V 40 V ±20V 4301 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ)
NVD5C460NT4G

NVD5C460NT4G

MOSFET N-CH 40V 18A/70A DPAK

onsemi

2,500 -
NVD5C460NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 70A (Tc) 10V 4.9mOhm @ 25A, 10V Surface Mount 4V @ 60µA 26 nC @ 10 V 40 V ±20V 1600 pF @ 25 V AEC-Q101 - DPAK Automotive 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ)
NVD5C460NLT4G

NVD5C460NLT4G

MOSFET N-CH 40V 18A/73A DPAK

onsemi

2,480 -
NVD5C460NLT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 73A (Tc) 4.5V, 10V 4.6mOhm @ 25A, 10V Surface Mount 2.2V @ 60µA 36 nC @ 10 V 40 V ±20V 2100 pF @ 25 V AEC-Q101 - DPAK Automotive 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ)
SIR5108DP-T1-RE3

SIR5108DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

12,000 -
SIR5108DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.4A (Ta), 55.9A (Tc) 7.5V, 10V 7.45mOhm @ 10A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 100 V ±20V 1150 pF @ 50 V - - PowerPAK® SO-8 - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ)
SIJ4108DP-T1-GE3

SIJ4108DP-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

11,722 -
SIJ4108DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.2A (Ta), 56.7A (Tc) 7.5V, 10V 52mOhm @ 10A, 10V Surface Mount 4V @ 250µA 52 nC @ 10 V 100 V ±20V 2440 pF @ 50 V - - PowerPAK® SO-8 - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
DI080N06PQ

DI080N06PQ

MOSFET POWERQFN 5X6 N 65V

Diotec Semiconductor

5,000 -
DI080N06PQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.6mOhm @ 40A, 10V Surface Mount 3V @ 250µA 56 nC @ 10 V 65 V ±20V 3500 pF @ 30 V - - 8-QFN (5x6) - 80W (Tc) -55°C ~ 150°C (TJ)
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