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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SISD5300DN-T1-GE3

SISD5300DN-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

5,835 -
SISD5300DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-F Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 62A (Ta), 198A (Tc) 4.5V, 10V 0.87mOhm @ 15A, 10V Surface Mount 2V @ 250µA 36.2 nC @ 10 V 30 V +16V, -12V 5030 pF @ 15 V - - PowerPAK® 1212-F - 5.4W (Ta), 57W (Tc) -55°C ~ 150°C (TJ)
DI100N10PQ-AQ

DI100N10PQ-AQ

MOSFET PWRQFN 5X6 100V 0.0045OHM

Diotec Semiconductor

5,000 -
DI100N10PQ-AQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 100 V ±20V 3400 pF @ 30 V - - 8-QFN (5x6) - 50W (Tc) -55°C ~ 150°C (TJ)
IRFR9210PBF-BE3

IRFR9210PBF-BE3

P-CHANNEL 200V

Vishay Siliconix

3,000 -
IRFR9210PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V Surface Mount 4V @ 250µA 8.9 nC @ 10 V 200 V ±20V 170 pF @ 25 V - - TO-252AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
RH6N040BHTB1

RH6N040BHTB1

NCH 80V 40A, HSMT8, POWER MOSFET

Rohm Semiconductor

3,000 -
RH6N040BHTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65A (Ta), 40A (Tc) 6V, 10V 8.3mOhm @ 40A, 10V Surface Mount 4V @ 1mA 23 nC @ 10 V 80 V ±20V 1530 pF @ 40 V - - 8-HSMT (3.2x3) - 2W (Ta), 59W (Tc) 150°C (TJ)
PJQ5542V-AU_R2_002A1

PJQ5542V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,980 -
PJQ5542V-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24.8A (Ta), 136A (Tc) 7V, 10V 3mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 43 nC @ 10 V 40 V ±20V 3050 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
IPP50R250CPXKSA1

IPP50R250CPXKSA1

LOW POWER_LEGACY

Infineon Technologies

500 -
IPP50R250CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 250mOhm @ 7.8A, 10V Through Hole 3.5V @ 520µA 36 nC @ 10 V 500 V ±20V 1420 pF @ 100 V - - PG-TO220-3-1 - 114W (Tc) -55°C ~ 150°C (TJ)
SISS4402DN-T1-GE3

SISS4402DN-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

11,900 -
SISS4402DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35.5A (Ta), 128A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 70 nC @ 10 V 40 V +20V, -16V 3850 pF @ 20 V - - PowerPAK® 1212-8S - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ)
TSM045NB06CR RLG

TSM045NB06CR RLG

MOSFET N-CH 60V 16A/104A 8PDFN

Taiwan Semiconductor Corporation

10,000 -
TSM045NB06CR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 104A (Tc) 10V 5mOhm @ 16A, 10V Surface Mount 4V @ 250µA 104 nC @ 10 V 60 V ±20V 6870 pF @ 30 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
TSM018NB03CR RLG

TSM018NB03CR RLG

MOSFET N-CH 30V 29A/194A 8PDFN

Taiwan Semiconductor Corporation

4,850 -
TSM018NB03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Ta), 194A (Tc) 4.5V, 10V 1.8mOhm @ 29A, 10V Surface Mount 2.5V @ 250µA 120 nC @ 10 V 30 V ±20V 7252 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
NVMYS1D7N04CTWG

NVMYS1D7N04CTWG

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi

2,854 -
NVMYS1D7N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V Surface Mount 4V @ 210µA 50 nC @ 10 V 40 V ±20V 3125 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ)
TN2640LG-G

TN2640LG-G

MOSFET N-CH 400V 260MA 8SOIC

Microchip Technology

2,593 -
TN2640LG-G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 260mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2V @ 2mA - 400 V ±20V 225 pF @ 25 V - - 8-SOIC - 1.3W (Ta) -55°C ~ 150°C (TJ)
MCU019N15YH-TP

MCU019N15YH-TP

POWER MOSFET

Micro Commercial Co

2,430 -
MCU019N15YH-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 6V, 10V 19mOhm @ 25A, 10V Surface Mount 4V @ 250µA 39 nC @ 10 V 150 V ±20V 2530 pF @ 75 V - - TO-252 (DPAK) - 150W (Tj) -55°C ~ 175°C (TJ)
TK10P50W,RQ

TK10P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

1,609 -
TK10P50W,RQ

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V Surface Mount 3.7V @ 500µA 20 nC @ 10 V 500 V ±30V 700 pF @ 300 V - - DPAK - 80W (Tc) 150°C
NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi

1,500 -
NVMYS1D6N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V Surface Mount 3V @ 210µA 71 nC @ 10 V 40 V ±20V 4301 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ)
NVTFS5C460NLWFTAG

NVTFS5C460NLWFTAG

MOSFET N-CH 40V 19A/74A 8WDFN

onsemi

1,475 -
NVTFS5C460NLWFTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V Surface Mount 2V @ 40µA 11 nC @ 10 V 40 V ±20V 1300 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
IPA052N08NM5SXKSA1

IPA052N08NM5SXKSA1

MOSFET N-CH 80V 64A TO220

Infineon Technologies

360 -
IPA052N08NM5SXKSA1

数据表

OptiMOS™ 5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 64A (Tc) 6V, 10V 5.2mOhm @ 32A, 10V Through Hole 3.8V @ 65µA 56 nC @ 10 V 80 V ±20V 3800 pF @ 40 V - - PG-TO220 Full Pack - 38W (Tc) -55°C ~ 175°C (TJ)
SISH116DN-T1-GE3

SISH116DN-T1-GE3

MOSFET N-CH 40V 10.5A PPAK

Vishay Siliconix

6,000 -
SISH116DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.5A (Ta) 4.5V, 10V 7.8mOhm @ 16.4A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V - - - PowerPAK® 1212-8SH - 1.5W (Ta) -55°C ~ 150°C (TJ)
DI068P04D1-AQ

DI068P04D1-AQ

MOSFET, DPAK, -40V, -68A, 0, 54W

Diotec Semiconductor

4,590 -
DI068P04D1-AQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel - 68A - - Surface Mount - - - - - - - TO-252 (DPAK) - 54W -
HUFA76633P3

HUFA76633P3

MOSFET N-CH 100V 39A TO220-3

onsemi

5,447 -
HUFA76633P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V Through Hole 3V @ 250µA 67 nC @ 10 V 100 V ±16V 1820 pF @ 25 V - - TO-220-3 - 145W (Tc) -55°C ~ 175°C (TJ)
IRF1010ZLPBF

IRF1010ZLPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies

6,528 -
IRF1010ZLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 7.5mOhm @ 75A, 10V Through Hole 4V @ 250µA 95 nC @ 10 V 55 V ±20V 2840 pF @ 25 V - - TO-262 - 140W (Tc) -55°C ~ 175°C (TJ)
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