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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XPH1R104PS,L1XHQ

XPH1R104PS,L1XHQ

40V UMOS9-H SOP ADVANCE

Toshiba Semiconductor and Storage

5,000 -
XPH1R104PS,L1XHQ

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Ta) 6V, 10V 1.14mOhm @ 60A, 10V Surface Mount 3V @ 500µA 55 nC @ 10 V 40 V ±20V 4560 pF @ 10 V AEC-Q101 - 8-SOP Advance (5x5) Automotive 3W (Ta), 132W (Tc) 175°C
IAUC120N06S5L022ATMA1

IAUC120N06S5L022ATMA1

MOSFET_)40V 60V)

Infineon Technologies

3,616 -
IAUC120N06S5L022ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 170A (Tj) 4.5V, 10V 2.2mOhm @ 60A, 10V Surface Mount 2.2V @ 65µA 77 nC @ 10 V 60 V ±20V 5651 pF @ 30 V - - PG-TDSON-8-34 - 136W (Tc) -55°C ~ 175°C (TJ)
IXTP24N65X2M

IXTP24N65X2M

MOSFET N-CH 650V 24A TO220

IXYS

295 -
IXTP24N65X2M

数据表

Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 145mOhm @ 12A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 650 V ±30V 2060 pF @ 25 V - - TO-220 Isolated Tab - 37W (Tc) -55°C ~ 150°C (TJ)
ISC110N12NM6ATMA1

ISC110N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,746 -
ISC110N12NM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 62A (Tc) 8V, 10V 11mOhm @ 26A, 10V Surface Mount 3.6V @ 35µA 19.3 nC @ 10 V 120 V ±20V 1400 pF @ 60 V - - SuperSO8 - 3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
XP6NA6R5H

XP6NA6R5H

MOSFET N-CH 60V 66A TO252

YAGEO XSEMI

990 -
XP6NA6R5H

数据表

XP6NA6R5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 66A (Tc) 6V, 10V 6.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 60 V ±20V 2976 pF @ 50 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
BUK9637-100E,118

BUK9637-100E,118

MOSFET N-CH 100V 31A D2PAK

Nexperia USA Inc.

739 -
BUK9637-100E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Tc) 5V, 10V 36mOhm @ 10A, 10V Surface Mount 2.1V @ 1mA 22.8 nC @ 5 V 100 V ±10V 2681 pF @ 25 V AEC-Q101 - D2PAK Automotive 96W (Tc) -55°C ~ 175°C (TJ)
IPB80N06S407ATMA2

IPB80N06S407ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

707 -
IPB80N06S407ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V - Surface Mount 4V @ 40µA 56 nC @ 10 V 60 V ±20V 4500 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 79W (Tc) -55°C ~ 175°C (TJ)
SIRA90DP-T1-GE3

SIRA90DP-T1-GE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix

6,357 -
SIRA90DP-T1-GE3

数据表

- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V Surface Mount 2V @ 250µA 153 nC @ 10 V 30 V +20V, -16V 10180 pF @ 15 V - - PowerPAK® SO-8 - 104W (Tc) -55°C ~ 150°C (TJ)
PSMQC078N10LS2_R2_00201

PSMQC078N10LS2_R2_00201

100V/ 7.8M/ EXCELLECT LOW FOM MO

Panjit International Inc.

5,840 -
PSMQC078N10LS2_R2_00201

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 100 V - - - - DFN5060-8 - - -
IRFR5410TRRPBF

IRFR5410TRRPBF

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

3,000 -
IRFR5410TRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 205mOhm @ 7.8A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 760 pF @ 25 V - - TO-252AA (DPAK) - 66W (Tc) -55°C ~ 150°C (TJ)
NVTYS014P04M8LTWG

NVTYS014P04M8LTWG

MV8 40V LL SINGLE PCH L

onsemi

3,000 -
NVTYS014P04M8LTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.4A (Ta), 53A (Tc) 4.5V, 10V 13.5mOhm @ 25A, 10V Surface Mount 3V @ 420µA 27 nC @ 10 V 40 V ±20V 16900 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 3.1W (Ta), 88W (Tc) -55°C ~ 175°C (TJ)
PJD25N04V-AU_L2_002A1

PJD25N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD25N04V-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 42A (Tc) 7V, 10V 11.3mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 9.5 nC @ 10 V 40 V ±20V 681 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
PJQ5574A-AU_R2_002A1

PJQ5574A-AU_R2_002A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJQ5574A-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD55N04S-AU_L2_002A1

PJD55N04S-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,600 -
PJD55N04S-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.7A (Ta), 87A (Tc) 4.5V, 10V 5.3mOhm @ 20A, 10V Surface Mount 2.3V @ 50µA 20 nC @ 10 V 40 V ±20V 1328 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 71W (Tc) -55°C ~ 175°C (TJ)
DMT6004SPS-13

DMT6004SPS-13

MOSFET N-CH 60V 23A PWRDI5060-8

Diodes Incorporated

2,136 -
DMT6004SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta) 10V 3.1mOhm @ 50A, 10V Surface Mount 4V @ 250µA 95.4 nC @ 10 V 60 V ±20V 4556 pF @ 30 V AEC-Q101 - PowerDI5060-8 Automotive 2.5W (Ta) -55°C ~ 150°C (TJ)
AOB66620L

AOB66620L

N

Alpha & Omega Semiconductor Inc.

3,014 -
AOB66620L

数据表

AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 57A (Tc) 8V, 10V 8.5mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 25 nC @ 10 V 60 V ±20V 1070 pF @ 30 V - - TO-263 (D2PAK) - 8.3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
IXTP50N085T

IXTP50N085T

MOSFET N-CH 85V 50A TO220AB

IXYS

3,643 -
IXTP50N085T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 23mOhm @ 25A, 10V Through Hole 4V @ 25µA 34 nC @ 10 V 85 V ±20V 1460 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 175°C (TJ)
IRCZ34PBF

IRCZ34PBF

MOSFET N-CH 60V 30A TO220-5

Vishay Siliconix

7,174 -
IRCZ34PBF

数据表

HEXFET® TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 50mOhm @ 18A, 10V Through Hole 4V @ 250µA 46 nC @ 10 V 60 V ±20V 1300 pF @ 25 V - Current Sensing TO-220-5 - 88W (Tc) -55°C ~ 175°C (TJ)
TSM120N06LCP

TSM120N06LCP

60V, 70A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

6,939 -
TSM120N06LCP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 70A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 37 nC @ 10 V 60 V ±20V 2118 pF @ 30 V - - TO-252 (DPAK) - 2.6W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
DMNH6012SPSWQ-13

DMNH6012SPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

3,177 -
DMNH6012SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 11mOhm @ 50A, 10V Surface Mount, Wettable Flank 4V @ 250µA 35.2 nC @ 10 V 60 V ±20V 1926 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.6W -55°C ~ 175°C (TJ)
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