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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BUK9628-55A,118

BUK9628-55A,118

MOSFET N-CH 55V 42A D2PAK

Nexperia USA Inc.

9,145 -
BUK9628-55A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 4.5V, 5V 25mOhm @ 15A, 10V Surface Mount 2V @ 1mA - 55 V ±10V 1725 pF @ 25 V AEC-Q101 - D2PAK Automotive 99W (Tc) -55°C ~ 175°C (TJ)
R6007KND3TL1

R6007KND3TL1

NCH 600V 7A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,494 -
R6007KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 5V @ 1mA 14.5 nC @ 10 V 600 V ±20V 470 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
BUK9875-100A,115

BUK9875-100A,115

MOSFET N-CH 100V 7A SOT-223

NXP USA Inc.

5,655 -
BUK9875-100A,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 4.5V, 10V 72mOhm @ 8A, 10V Surface Mount 2V @ 1mA - 100 V ±10V 1690 pF @ 25 V AEC-Q101 - SC-73 Automotive 8W (Tc) -55°C ~ 150°C (TJ)
IPD30N08S222ATMA1

IPD30N08S222ATMA1

MOSFET N-CH 75V 30A TO252-3

Infineon Technologies

1,773 -
IPD30N08S222ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 21.5mOhm @ 50A, 10V Surface Mount 4V @ 80µA 57 nC @ 10 V 75 V ±20V 1400 pF @ 25 V - - PG-TO252-3-11 - 136W (Tc) -55°C ~ 175°C (TJ)
MIC94030YM4-TR

MIC94030YM4-TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology

6,840 -
MIC94030YM4-TR

数据表

TinyFET® TO-253-4, TO-253AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V Surface Mount 1.4V @ 250µA - 16 V 16V 100 pF @ 12 V - - SOT-143 - 568mW (Ta) -55°C ~ 150°C (TJ)
FDS8817NZ

FDS8817NZ

MOSFET N-CH 30V 15A 8SOIC

onsemi

7,236 -
FDS8817NZ

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V Surface Mount 3V @ 250µA 45 nC @ 10 V 30 V ±20V 2400 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
NVTFWS004N04CTAG

NVTFWS004N04CTAG

MOSFET N-CH 40V 18A/77A 8WDFN

onsemi

1,500 -
NVTFWS004N04CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 77A (Tc) 10V 4.9mOhm @ 35A, 10V Surface Mount 3.5V @ 50µA 18 nC @ 10 V 40 V ±20V 1150 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
SI1411DH-T1-E3

SI1411DH-T1-E3

MOSFET P-CH 150V 420MA SC70-6

Vishay Siliconix

5,660 -
SI1411DH-T1-E3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 420mA (Ta) 10V 2.6Ohm @ 500mA, 10V Surface Mount 4.5V @ 100µA 6.3 nC @ 10 V 150 V ±20V - - - SC-70-6 - 1W (Ta) -55°C ~ 150°C (TJ)
SI3867DV-T1-E3

SI3867DV-T1-E3

MOSFET P-CH 20V 3.9A 6TSOP

Vishay Siliconix

4,593 -
SI3867DV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.9A (Ta) 2.5V, 4.5V 51mOhm @ 5.1A, 4.5V Surface Mount 1.4V @ 250µA 11 nC @ 4.5 V 20 V ±12V - - - 6-TSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
NVMFS5C673NWFT1G

NVMFS5C673NWFT1G

MOSFET N-CH 60V 14A/50A 5DFN

onsemi

1,500 -
NVMFS5C673NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 50A (Tc) 10V 10.7mOhm @ 7A, 10V Surface Mount, Wettable Flank 4V @ 35µA 9.6 nC @ 10 V 60 V ±20V 680 pF @ 30 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ)
SIA411DJ-T1-E3

SIA411DJ-T1-E3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix

3,987 -
SIA411DJ-T1-E3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 1.5V, 4.5V 30mOhm @ 5.9A, 4.5V Surface Mount 1V @ 250µA 38 nC @ 8 V 20 V ±8V 1200 pF @ 10 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
NVMFS4C306NT1G

NVMFS4C306NT1G

TRENCH 30V NCH

onsemi

1,500 -
NVMFS4C306NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.6A (Ta), 71A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V Surface Mount 2.1V @ 250µA 11.6 nC @ 4.5 V 30 V ±20V 1683 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3W (Ta), 36.5W (Tc) -55°C ~ 175°C (TJ)
SIA411DJ-T1-GE3

SIA411DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix

4,153 -
SIA411DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 1.5V, 4.5V 30mOhm @ 5.9A, 4.5V Surface Mount 1V @ 250µA 38 nC @ 8 V 20 V ±8V 1200 pF @ 10 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
PJQ5522-AU_R2_002A1

PJQ5522-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5522-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TPCP8004(TE85L,F)

TPCP8004(TE85L,F)

MOSFET N-CH 30V 8.3A PS-8

Toshiba Semiconductor and Storage

6,807 -
TPCP8004(TE85L,F)

数据表

U-MOSIV 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V, 10V 8.5mOhm @ 4.2A, 10V Surface Mount 2.5V @ 1mA 26 nC @ 10 V 30 V ±20V 1270 pF @ 10 V - - PS-8 (2.9x2.4) - 840mW (Ta) 150°C (TJ)
IRF7410GTRPBF

IRF7410GTRPBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies

3,578 -
IRF7410GTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V Surface Mount 900mV @ 250µA 91 nC @ 4.5 V 12 V ±8V 8676 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPP029N06NXKSA1

IPP029N06NXKSA1

TRENCH 40<-<100V

Infineon Technologies

495 -
IPP029N06NXKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V Through Hole 3.3V @ 75µA 66 nC @ 10 V 60 V ±20V 5125 pF @ 30 V - - PG-TO220-3-1 - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
IRLR8726TRLPBF

IRLR8726TRLPBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies

3,468 -
IRLR8726TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V Surface Mount 2.35V @ 50µA 23 nC @ 4.5 V 30 V ±20V 2150 pF @ 15 V - - TO-252AA (DPAK) - 75W (Tc) -55°C ~ 175°C (TJ)
FQD12N20LTM-F085P

FQD12N20LTM-F085P

MOSFET N-CH 200V 9A TO252

onsemi

4,798 -
FQD12N20LTM-F085P

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 5V, 10V 280mOhm @ 4.5A, 10V Surface Mount 2V @ 250µA 21 nC @ 5 V 200 V ±20V 1080 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
SI4004DY-T1-GE3

SI4004DY-T1-GE3

MOSFET N-CH 20V 12A 8-SOIC

Vishay Siliconix

4,607 -
SI4004DY-T1-GE3

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) - 13.8mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 33 nC @ 10 V 20 V - 1280 pF @ 10 V - - 8-SOIC - - -
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